• Applied Science and Convergence Technology
• /
• v.26 no.4
• /
• pp.79-85
• /
• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Current Optics and Photonics
• /
• v.2 no.6
• /
• pp.582-588
• /
• 2018

A $Nd:YVO_4$ laser dual-end-pumped by a wavelength-locked 878.6 nm laser diode is presented. At the repetition rate of 500 KHz, the absorbed pump power of 58 W, an output power of 26.1 W at 1064 nm is obtained, corresponding to an optical-optical efficiency of 45%. The pulse width is 44.2 ns. Meanwhile, the effects of traditional 808 nm pumping and 878.6 nm dual-end-pumping on the output laser beam quality and pulse width are compared and analyzed in an experiment.

• Korean Journal of Optics and Photonics
• /
• v.22 no.2
• /
• pp.96-101
• /
• 2011

Operational and thermal characteristics of a thin disk Yb:YAG crystal with a thickness of 0.8 mm were studied using as a pumping source a fiber-coupled 930 nm laser diode. The heat generated in the crystal was dissipated by placing both surfaces in contact with copper plates with central hole, and the dependence of the temperature change in the illuminated spot on hole size was investigated by measuring the spectral change of the lasing peaks. The slope efficiency and optical-to-optical efficiency with respect to the LD pump power were as high as 42.2% and 34.8%, respectively. The temperature at the illuminated spot increased with diode current and with increasing hole size of the copper plate. When the hole size considerably exceeded the crystal thickness, the temperature rise deviated from the linear increase at high pump power.

• The Magazine of the IEIE
• /
• v.30 no.5
• /
• pp.53-53
• /
• 2003

지금까지 GaN 계열 물질의 양자점 소자 관련 연구 동향을 양자점 구현 방식을 중점으로 하여 살펴보았다. GaN 계열 물질의 양자점을 구현하는 방법은 S-K 성장모드를 이용한 자발형성 양자점 구현법, anti-surfactaant를 이용하는 방법, selective epitaxy를 이용한 양자점 구현법 등이 시도되고 있다. 현재 GaN 계열 물질의 양자점 소자 연구는 아직 충분한 연구가 이루어지짖 않은 관계로 optical pumping을 통한 LD lasing 구현에 머무르고 있는 실정이다. 후 소자로의 응용을 위해서는 여러 가지 문제점이 해결되어야 한다. 우선 우수한 결정성을 지니는 양자점의 성장이 이루어져야 한다. 이외에도 각 구현 방법 별로 GaN 및 AlGaN 양자점 성장용 기판으로 많이 사용되는 높은 조성의 AlGaN 및 AlN의 doping 기술 개발, patterning 기술의 개선을 통한 미세 공정 개발 등의 여러 가지 과제들이 남아 있다. 그러나, 양자점이 지진 우수한 특성과 이를 이용한 높은 응용 가능성을 고려할 때 GaN 계열 양자점 소자의 전망은 밝다고 할 수 있다.

• The Magazine of the IEIE
• /
• v.30 no.5
• /
• pp.509-517
• /
• 2003

지금까지 GaN 계열 물질의 양자점 소자 관련 연구 동향을 양자점 구현 방식을 중점으로 하여 살펴보았다. GaN 계열 물질의 양자점을 구현하는 방법은 S-K 성장모드를 이용한 자발형성 양자점 구현법, anti-surfactaant를 이용하는 방법, selective epitaxy를 이용한 양자점 구현법 등이 시도되고 있다. 현재 GaN 계열 물질의 양자점 소자 연구는 아직 충분한 연구가 이루어지짖 않은 관계로 optical pumping을 통한 LD lasing 구현에 머무르고 있는 실정이다. 후 소자로의 응용을 위해서는 여러 가지 문제점이 해결되어야 한다. 우선 우수한 결정성을 지니는 양자점의 성장이 이루어져야 한다. 이외에도 각 구현 방법 별로 GaN 및 AlGaN 양자점 성장용 기판으로 많이 사용되는 높은 조성의 AlGaN 및 AlN의 doping 기술 개발, patterning 기술의 개선을 통한 미세 공정 개발 등의 여러 가지 과제들이 남아 있다. 그러나, 양자점이 지진 우수한 특성과 이를 이용한 높은 응용 가능성을 고려할 때 GaN 계열 양자점 소자의 전망은 밝다고 할 수 있다.

• Journal of the Optical Society of Korea
• /
• v.6 no.2
• /
• pp.48-54
• /
• 2002

Experimental study is performed on flashlamp-pumped Ti: sapphire lasers with single, double, and four-partial-ellipse-pump cavities aiming at improving the performance of the lasers. The output energy of 604 mJ per pulse with a width of 25 $\mu$s at a total laser efficiency of 0.13% is achieved in the laser pumped by a light pulse of 45$\mu$s without a fluorescent converter The laser output energy versus its Ti: sappy ire rod length, pumping-light pulse duration, and electrical input energy are discussed with or without using a fluorescent converter. The result shows that much more output energy is obtained il a longer Ti: sapphire-rod laser pumped by a shorter light pulse when its output coupler has an optimized transmittance. In addition, an enhancement of output energy by a factor of 7 is achieved. in the laser using a fluorescent converter LD490.

• Korean Journal of Optics and Photonics
• /
• v.23 no.3
• /
• pp.124-127
• /
• 2012

We designed and fabricated dichroic filters for high-power fiber lasers to protect the pumping laser diode from counterpropagating laser beams. The transmittance at laser diode wavelengths of 905 nm~925 nm was designed to be less than 0.1% and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm ~ 1100 nm was designed to be more than 99.9%. Since oxide materials have good adhesion to the $SiO_2$ substrate, $SiO_2/Ta_2O_5$ were used as coating materials. The filter was fabricated according to our optimized design and its characteristics were compared with the theoretical design. As a result, the transmittance at laser diode wavelengths of 905 nm~925 nm was measured to be less than 0.1%, and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm~1100 nm was measured to be more than 95.5%, which coincided well with the theoretical design considering processing errors. The filter was found to operate well over 1W of input laser power.

• Korean Journal of Optics and Photonics
• /
• v.9 no.4
• /
• pp.231-235
• /
• 1998

Passively Q-switched, laser diode(LD) end-pumped Nd:YAG laser was demonstrated by using $Cr^{4+}$:YAG as a saturable absorber. In addition , we could calculate an excitation efficiency, which is an important parameter to evaluate the pumping geometry, directly by measuring the absorbed power in Nd:YAG at threshold condition. We found that output parameters such as average power, pulse duration, and repetition rate strongly depended on the low intensity transmission of $Cr^{4+}$:YAG and driving current of lase diode. The maximum Q-switched output power of 1 W was obtained with 40 kHz repetition rate. The pulse duration was varied from 50 ns to 200 ns.