• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.194-199
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• 2021

In this study, rebar corrosion detection sensor was fabricated using multi-walled carbon nanotubes (MWCNTs). MWCNTs were pre-treated in the acid electrolytes to attach the carboxylic acid to the surface of MWCNTs. The fabricated sensor was attached on the surface of rebar and it detected the corrosion of steel using LCR meter with variation of capacitance. The surface morphology and electrical properties were characterized using scanning electron microscope (SEM) and electrical test equipment, respectively. To verify the corrosion detection characteristics, comparison experiment using plastic bar was performed. Moreover, mechanism of corrosion detection sensor was discussed.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.495-499
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• 2010

To develop chemical and biosensors, this paper studies sensing characteristics of bulk carbon nanotube (CNT) electrodes by means of their electrical impedance properties due to their large surface area and excellence chemical absorptivity. The sensors were fabricated in the form of film and nano web style by using composite process for mass production. The bulk composite electrodes were fabricated with singlewall and multi-wall carbon nanotubes based on host polymers such as Nafion and PAN, using a solution-casting and an electrospinning technique. The resistance and the capacitance of electrodes were measured with LCR meter under the various amounts of buffer solution to study the electrical impedance change properties of them. On the experimental of sensor electrode, impedance characteristics of the composite electrode are affected by its host polymer and nanofiller and its sensing response showed saturated result after applying some amounts of buffer solution for test chemical. Especially, the capacitance values showed drastic changes while the resistance values only changed within few percent range. It is deduced that the ions in the solution penetrated and diffused into the electrodes surface changed the electrical properties of the electrodes much like a doping effect.

• Polymer(Korea)
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• v.35 no.6
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• pp.593-598
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• 2011

The IPA-co-HDO-co-(TPA/MA) copolymers for all-vanadium redox flow battery were synthesized by melt condensation polymerization using isophthalic acid(IPA), 1,6-hexandiol (HDO), terephthalic acid(TPA) and maleic anhydride(MA). The amination of chloromethylated IPA-co- HDO-co-(TPA/MA)(CIHTM) copolymer was carried out using trimethylamine, and the anion exchange membrane was also prepared by UV crosslinking reaction. The structure and thermal stability of IHTM copolymers were confirmed by FTIR, $^1H$ NMR, and TGA analysis. The anion membrane properties such as water uptake, ion exchange capacity, electric resistance and electrical conductivity, were measured by gravimetry, titration and LCR meter. The efficiency of the all-vanadium redox flow battery was analyzed. The ion exchange capacity, electric resistance and electrical conductivity were 1.10 meq/g, $1.98{\Omega}{\cdot}cm^2$, and 0.009 S/cm, respectively. The efficiency of charge-discharge, voltage, and energy for the allvanadium redox flow battery were 96.5, 74.6, 70.0%, respectively.

• Bulletin of the Korean Chemical Society
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• v.27 no.5
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• pp.718-724
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• 2006

The heterogeneous association behaviour of various concentration binary mixtures of mono alkyl ethers of ethylene glycol with ethyl alcohol were investigated by dielectric measurement in benzene solutions over the entire concentration range at 25 ${^{\circ}C}$. The values of static dielectric constant $\epsilon_0$ of the mixtures were measured at 1 MHz using a four terminal dielectric liquid test fixture and precision LCR meter. The high frequency limiting dielectric constant $\epsilon_\infty$ values were determined by measurement of refractive index $n_D$ ($\epsilon_\infty\;=\;n_D\;^2$). The measured values of $\epsilon_0$ and $\epsilon_\infty$ were used to evaluate the values of excess dielectric constant $\epsilon^E$, effective Kirkwood correlation factor $g^{eff}$ and corrective correlation factor $g_f$ of the binary polar mixtures to obtain qualitative and quantitative information about the H-bond complex formation. The non-linear behaviour of the observed $\epsilon_0$ values of the polar molecules and their mixtures in benzene solvent confirms the variation in the associated structures with change in polar mixture constituents concentration and also by dilution in non-polar solvents. Appearance of the maximum in $\epsilon^E$ values at different concentration of the polar mixtures suggest the formation of stable adduct complex, which depends on the molecular size of the mono alkyl ethers of ethylene glycol. Further, the observed $\epsilon^E$ < 0 also confirms the heterogeneous H-bond complex formation reduces the effective number of dipoles in these polar binary mixtures. In benzene solutions these polar molecules shows the maximum reduce in effective number of dipoles at 50 percent dilutions. But ethyl alcohol rich binary polar mixtures in benzene solvent show the maximum reduce in effective number of dipoles in benzene rich solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Journal of Energy Engineering
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• v.11 no.1
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• pp.67-73
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• 2002

The carbon-in-ash system for simultaneously monitoring the unburned carbon in fly ash produced in a coal-fired power plan is designed and evaluated using the domestic fly ash produced in the coal-fired power plant. Real time monitoring is very important to control the combustion of the boiler in the coal-fired power plant and the purification system for fly ash recycling. The carbon-in-ash system based on the capacitance measurement consists of a LCR meter, a duct collector and an electrode cell. The capacitance of fly ash increases linearly with increasing fly ash carbon contents. The water content in fly ash plays an important role on the ash capacitance. The empirical equation for predicting the content of unburned carbon in fly ash produced in the domestic Boryung, Hadong and Samchenpo coal-fired power plants can be derived in the range of carbon content 0-20%.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.369-374
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• 2000

In order to investigate the effects of addition of 1M sulfuric acid to the etching solution or 1M hydrochloric acid on the etching behavior of aluminum foil for electrolytic capacitors, the changes in the density of etch pit, the length and diameter of etch tunnels and the capacitance were analyzed using SEM, TEM, LCR meter etc. Sulfate ion as a corrosion inhibitor was contributed to the increase of the surface area comparing with chloride ion. By adding sul-furic acid the density of etch pit and the length of etched tunnel increased and the diameter of the tunnel decreased, resulting in the increase of capacitance. It was also shown that the capacitance decreased when the current density was below $0.9A/\textrm{cm}^2$, while remarkably increased in the other case.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.344-344
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• 2013

칩의 크기가 감소함에 따라 RC (Resistance, Capacitance) 지연, 전력소비증가 및 신호잡음 등이 문제가 되어왔다. RC지연 문제는 배선에 알루미늄 보다 비저항이 낮은 구리를 사용하고 절연막으로 유전상수가 낮은 물질을 사용하여 개선될 수 있다. 이와 같은 맥락에서 점차 저유전상수 박막의 필요성은 증가하고 있다. 그러므로 이를 개선하기 위해 저 유전상수 값을 가지는 물질을 개발 혹은, UV나 플라즈마 그리고 열을 이용하여 처리하는 연구가 절실히 요구되고 있으며, 현재 많은 연구가 진행되고 있다. 이 논문에서 저유전박막은 HDP-CVD (High Density Plasma Chemical Vapor Deposition) 시스템에서 (CyOz)-SiHx와 O2의 비율을 각각 변화시키면서 증착 되었다. (CyOz)-SiHx와 O2의 비율은 60/150, 60/180, 60/210, 60/240로 증가하면서 증착하였다. 그리고 surface profilometer을 이용하여 박막의 증착율을 측정하고 LCR meter를 이용하여 정전용량을 측정하여 유전상수 값을 얻었다. 박막의 화학적 조성과 구조는 FTIR (Fourier Transform Infrared Spectroscopy)로 측정하였다. 박막의 유동 특성은 SEM (Scanning electron microscope) 이미지로 살펴보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.457-457
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• 2014

오존발생방법은 다양한 방식으로 구현이 가능하나 대용량 장치를 만들기 위해서는 DBD (Dielectric barrier discharge) 구조의 형태의 가지고 있다. 이러한, DBD는 반도체의 MOS (Metal On Semiconductor)의 반대 구조를 가진 SOM (Semiconductor On Metal)의 형태를 가지고 있으며 대부분이 Oxidation 산화물을 가지고 구현한다. 오존발생기는 반도체 공정, 환경 및 정화 등 다양한 분야에 사용이 되고 있는 상황으로 성능개선을 위한 연구가 필요한 상황이다. 대표적으로 사용되는 물질인 $SiO_2$를 가지고 있는 상황이며 Silicon은 에너지 Bandgap이 1.1 eV로 금속위에 증착되어 통상적으로 사용되는 문턱전압은 0.7 V에 해당이 된다. 현재 점차적으로 연구가 진행되고 있는 $Al_2O_3$는 8.8 eV의 bandgap을 가지고 있으며 유전 상수가 9로 $SiO_2$인 3.9보다 높은 유전률 특징을 가지고 있다. 따라서, 본 연구는 오존 발생장치에 사용되는 방전관을 기존의 $SiO_2$에서 $Al_2O_3$ 방식으로 대체하므로써 실제적인 유전율의 값의 차이와 오존 발생시 오존변화율 증대에 관하여 연구하였다. $SiO_2$ 방전관은 Fe 메탈위에 약 3 mm정도의 두께를 binding시켜 N4L사의 PSM1700 모델 LCR meter를 사용하여 1.3 kHz시 7.2 pF의 유전율 확인 할 수 있으며 동일한 조건의 금속 메탈위에 $Al_2O_3$를 binding 시켜 측정한 결과 1.07 kHz시 10.7 pF의 유전율을 가지게 되어 40% 이상 높은 유전율을 가지게 되는 것을 확인 할 수 있다. 오존발생을 위하여 가변 주파수형 트랜스 드라이버를 통한 공진 주파수를 생성하여 방전 증폭을 위한 Amplifier를 통하여 변환률을 높이는 방식을 적용하여 MIDAC사의 I1801모델 적외선 분광기(FT-IR)를 통한 오존발생량을 측정하여 기존의 $SiO_2$의 방전관은 시간당 54 g의 오존 발생률 가지게 된다. $Al_2O_3$는 시간당 70 g 정도의 오존 발생률 가지므로 기존의 $SiO_2$ 보다 발생률 높은 것을 확인 할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.