• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1049-1052
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• 2004

In general, contrary to the CRTs with impulsive emission, liquid crystal displays have motion artifacts such as blurring. ghost image, decrease of dynamic CR(contrast ratio), and stroboscopic motion due to hold type driving method. In this paper, to improve motion picture quality of LCDs. impulsive driving method of black data insertion was applied to the OCB mode which is well known for its fast LC response time and wide viewing angle properties. Subject evaluation was carried out with CRT, TN, SIPS(Super IPS). and impulsive driving OCB. Moving picture image quality near CRT was obtained in impulsive OCB driving mode

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.255-258
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• 2004

We have developed the Scan-backlight Stereoscopic LCD that is a kind of field-sequential -Stereoscopic LCD combining the Dual-Directional-Backlight and the fast-response OCB panel. The Dual-Directional-Backlight using a double-sided prism sheet can change the direction of light by switching the LED light sources. The OCB panel using Feed-Forward Drive can realize frame rate of 120 Hz. As a result, the Scan-backlight Stereoscopic display works at its original resolving power, and produces flicker-free stereoscopic images. This auto stereoscopic display can resolved the problems of the double images and the pseudoscopic images in case of watching at oblique angles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.165-168
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• 2000

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color fiat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. In addition, PDAST can estimate voltage distributions in common electrode which can affect pixel voltage and feed-through voltage. Since PDAST can simulate the gate, data and the pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of common electrode voltage can be effectively analyzed. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.377-382
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• 2003

We propose a new optical watermarking method, which can protect the copyright of digital data, using a binary phase hologram and a Mach-Zehnder interferometer. Using a simulated annealing algorithm, the binary phase hologram of the mark image to be hidden is designed. We obtained a watermarked image by linearly superposing the hologram, which is the watermark, in the original image. The extraction processing of the mark image from the watermarked image is achieved by placing the phase-modulated watermarked image on a LCD in one path and the phase-modulated original image on another LCD in the other path in the Mach-Zehnder interferometer. The mark image was obtained by inverse Fourier transforming the phase modulated interference intensity. We confirmed that the proposed method is robust for the cropped images through computer simulation, and we implemented it optically using LCDs which are phase modulation devices.

• Journal of Information Display
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• v.12 no.3
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• pp.115-119
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• 2011

Optically isotropic liquid crystal (LC) mixture such as blue-phase LC and nanostructured LC composites exhibit the advantages of fast response time, high contrast ratio and wide-viewing angle due to the induced birefringence along the horizontal electric field. Utilizing this mixture, a novel single cell gap in-plane switching-type polymer-stabilized blue-phase transflective liquid crystal display by embedding the nanowire grid polarizer as a polarization-dependent reflective polarizer in the R region is proposed. This device can be used as a normal black mode without any quarter-wave plate or patterned in-cell phase retarder. Moreover, the transmittance is identical to the reflectance so that it will be suitable for single gamma driving. Detailed electro-optic performances, such as voltage-dependent light efficiency and viewing angle of the proposed device configuration, are investigated.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Archives of design research
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• v.20
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• pp.123-132
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• 1997

These days we live in society which the expanion and variety f information continuse with the evolution of technology. However, because much information exists in a black box, we have difficulty in using information embodied in products. For example, companies do not consider that much the position of users in using information and they thnd to tely too much on LCDs. But the limitation of monitors' screen and the tendency of miniaturization cause users some burden in obtaining visual information. Accordingly, the objective of this paper is to study an extent to which the auditory information is able to support userinterface, to compare it with the visual information, and eventually to find the way of suing auditory information as a means of expression.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1281-1283
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• 2007

In this paper, the properties of n-channel poly-Si TFTs with different channel widths are reported. Poly-Si fabricated using ELA on glass substrates has high quality as a material for applications such as TFT-LCDs. The fabricated n-channel TFTs have a double stack structure of oxide-nitride which acts as an insulator layer. The results show that the small channel TFTs exhibited a lower $V_{TH}$ and the wide channel TFTs had a higher $I_{DSAT}$. The nchannel poly-Si TFTs with an $I_{ON}/I_{OFF}$ value of more than $10^4$ can be reliable switching devices for AMOLED displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.333-336
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• 2008

We have studied on optical properties of advanced S-IPS with a fine pitch electrode and a new finger design. Transmittance of panel increases with decreasing of width and angle of finger electrode. In order to improve transmittance, fine pitch electrode of ${\sim}2{\mu}m$ and rubbing angle of 10 degree have been adopted. Various optical performances are defined as the function of finger design and field intensify across the IPS pixel electrodes. We have developed the advanced electrode structures with a high performance. As a result, the optical properties of 42" full HD with 120Hz frequency shows high transmittance over 5%, contrast ratio of 1800:1, gray-to-gray response time of 4.4ms, respectively. And also we have studied that the moving picture quality of IPS LCD is related with design parameters of IPS cells and finger shape.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.729-732
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• 2006

The effect of stress match between silicon nitride ($SiN_2$) and hydrogenated amorphous silicon (a-Si:H) layers on the electrical characteristics of thin-film transistors (TFTs) has been investigated. The result shows that modifying the deposition conditions of a Si:H and $SiN_2$ thin films can reduce the stress mismatch at a-Si:H/SiNx interface. Moreover, for best a-Si:H TFT characteristics, the internal stress of gate $SiN_2$ layer with slightly nitrogen-rich should be matched with that of a-Si:H channel layer. The ON current, field-effect mobility, and stability of TFTs can be enhanced by controlling the stress match between a-Si:H and gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and SiNx layer, and the good dielectric quality of the bottom nitride layer.