• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1436-1440
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• 2007

Beryllium copper has been known to be an important material for the various fields of industry because it can be used for mechanical and electrical/electronic components that are subjected to elevated temperatures (up to $400^{\circ}C$ for short times). Blade type tip for probing the cells of liquid crystal display(LCD) was fabricated using beryllium copper foil. The dry film resist was employed as a mask for patterning of the blade type tip. The beryllium copper foil was etched using hydrochloric acidic iron-chloride solution. The concentration, temperature, and composition ratio of hydrochloric acidic iron-chloride solution affect the etching characteristics of beryllium copper foil. Nickel with the thickness of $3{\mu}m$ was electroplated on the patterned copper beryllium foil for enhancing its hardness, followed by electroplating gold for increasing its electrical conductivity. Finally, the dry film resist on the bridge was removed and half of the nickel was etched to complete the blade type tip.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.175-181
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• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1085-1087
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• 1995

A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.34-40
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• 2002

In this paper, a new encryption method for a binary image using Phase modulation and Fourier transform is proposed. For decryption we use the characteristics of square law detector. In encryption process, a key image is obtained by phase modulation of 256 level random pattern and its Fourier transformation, and input image is encrypted by Fourier transforming the multiplication of the phase modulated random pattern and phase modulated input image. The encrypted image and key image have only phase information, so they can not be copied or counterfeited and the original image can not be decrypted without the key image. To reconstruct the original image, each phase mask of the key image and the encrypted image must be placed on each path of the Mach-Zehnder interferometry with Fourier transform lens and the output image is obtained in the form of intensity in the CCD(Charge Coupled Device) camera. The real-time decryption is possible in the proposed system by use of a LCD as a phase modulator and a CCD camera as an intensity detector. The proposed method shows a good performance in the computer simulation and optical experiment as an encryption scheme.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.11C
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• pp.940-947
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• 2010

Motion Compensated Frame Interpolation(MCFI) has been used to reduce motion jerkiness for dynamic scenes and motion blurriness for LCD-panel display as post processing for high quality display. However, MCFI that directly uses the motion information often suffers from annoying artifacts such as blockiness, ghost effects, and deformed structures. So in this paper, we propose a novel edge-based adaptively weighted vector median filter as post-processing. At first, the proposed method generates an edge direction map through a sobel mask and a weighted maximum frequent filter. And then, outlier MVs are removed by average of angle difference and replaced by a median MV of $3{\times}3$ window. Finally, weighted vector median filter adjusts the weighting values based on edge direction derived from spatial coherence between the edge direction continuity and motion vector. The results show that the performance of PSNR and SSIM are higher up to 0.5 ~ 1 dB and 0.4 ~ 0.8 %, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.73-73
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• 2003

최근 LCD(liquid crystal display)분야에서 고해상도와 빠른 응답속도를 가지는 다결정 실리콘 박막트랜지스터에 대한 연구를 하고 있다. 그러나, poly-Si은 poly-Sil-xGex에 비해 intrinsic carrier mobility가 낮고 고온의 결정화 공정을 필요로 한다. 따라서, Poly-Si을 대체할 재료로 poly-SiGe에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 전계에 의해 결정화가 가속되고 한쪽 방향으로 결정화를 제어하여 채널내 전자나 정공의 이동도를 향상시 킬 수 있는 새로운 결정화 방법인 전계 유도 방향성 결정화법을 이용하여 Ge 함량에 따른 a-Sil-xGex(0$\leq$x$\leq$0.5)의 결정화 특성을 연구하였다. 대기압 화학 기상 증착법으로 5000$\AA$의 산화막(SiO$_2$)이 증착된 유리 기판상에 플라즈마 화학 기상 증착법을 이용하여 800$\AA$의 비정질 실리콘을 증착한 후 RF magnetron sputtering법을 이용하여 Ge 함량에 따른 Sil-xGex 박막을 1000$\AA$ 증착하였다. Photolithograph방법을 이용하여 금속이 선택적으로 증착될 수 있는 특정 Pattern을 가진 mask를 형성한 후 금속을 DC magnetron sputtering법을 이용하여 상온에서 50$\AA$.을 증착하였다. 이후 시편에 전계를 인가하기 위해 시편의 양단에 전극을 형성한 후 DC Power Supply를 통해 전압을 제어하는 방식으로 전계를 인가하였다. 결정화 속도는 광학현미경을 이용하여 분석하였으며 결정화된 영역의 결정화 정도는 micro-Raman spectroscopy로 분석하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.132-137
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• 2006

With the help of the development of digital-multimedia in the middle of 1990's, FDP(Flat Panel Display) had attracted considerable attention. Collimation proximity exposure system that transfers the pattern on wafer or glass exactly using mask and light with appropriate wavelength is core process in semiconductor and liquid display element. The performances of resolution required in precision exposure system are evaluated by resolving power, depth of focus and storage area. Most of development has targeted on these three factors. The optical design including lamp house has played an important role on the performance of exposure process. In this study, we evaluate the cooling system, concerning on exposure device with mercury lamp among the kernel equipment for the production of LCD, to prevent the instability of lighting due to long term accumulation of excessive heating inside the lamp house. Numerical analysis is conducted on full-scale model. The characteristics of three-dimensional flow, pressure and temperature distribution on exposure system are graphically depicted to estimate the whole cooling system for lamp house and to establish the design criteria.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.37-41
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• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.73-78
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• 2012

In this study, the optimal process condition was induced about the pillar arrangement process of applying the screen printing method in the manufacture process of vacuum glazing panel. The high precision screen printing is technology which pushes out the paste and spreads it by using the squeegee on the stainless steel plate in which the pattern is formed. The screen printing method is much used in the flat panel display field including the LCD, PDP, FED, organic EL, and etc for forming the high precision micro-pattern. Also a number of studies of screen printing method have been conducted as the method for the cost down through the improvement of productivity. The screen printing method has many parameters. So we used Taguchi method in order to decrease test frequencies and optimize this parameters efficiently. In this study, experiments of pillar arrangement were performed by using Taguchi experimental design. We analyzed experimental results and obtained optimal conditions which are 4 m/s of squeegee speed, $40^{\circ}$ of squeegee angle and distance between metal mask and glass.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.