• 제목/요약/키워드: LCD Process

검색결과 634건 처리시간 0.028초

Development of the advanced transflective LCDs with high optical performance

  • Lee, Jong-Hwae;Park, Ku-Hyun;Kim, Hyun-Ho;Yoon, Jae-Kyung;Park, Ki-Bok;Shin, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1330-1332
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    • 2007
  • We have newly developed transflective LCDs with a specific sub-pixel and the single cell gap structure. In our structure, the overall transmittance and reflectance has become higher than typical transflective LCDs. Furthermore, it can simplify the fabrication process of the transflective LCDs.

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TFT-LCD 산업에서의 공정관리 (A Process Control in TFT-LCD Industries)

  • 조중형;남호수;이현우
    • 한국경영과학회:학술대회논문집
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    • 한국경영과학회/대한산업공학회 2005년도 춘계공동학술대회 발표논문
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    • pp.372-376
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    • 2005
  • TFT-LCD(박막 트랜지스터 액정 디스플레이, Thin Film Transistor - Liquid Crystal Display) 산업은 현재 국가의 기간산업으로서 국제경쟁력을 갖추고 있는 몇 안되는 산업 분야 중 하나이다. 따라서, 본 논문에서는 통계적 공정 관리 및 품질 관리 관점에서 TFT-LCD 공정의 특징과 이에 필요한 요소들을 제안하고자 한다.

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LCD 패널 세척공정에서 원적외선 히터에 의한 유리기판 승온시간 예측 (Prediction of Heat-Up Time of the Glass Plate by IR Heaters in an LCD-Panel Cleaning Process)

  • 김윤호;지태호;김서영;리광훈
    • 설비공학논문집
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    • 제18권6호
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    • pp.526-533
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    • 2006
  • The prediction of heat-up time of an LCD glass plate in LCD glass pre-treatment process has been implemented in the present study. Firstly, the analytical solution for one-dimensional radiation heat transfer from IR heaters to a LCD glass plate is obtained. When the surface temperature of the IR heaters is set at 473 K, the heat-up time of LCD glass to averaged temperature of 383K is 28 seconds. In addition, a three dimensional full CFD analysis using STAR-CD is implemented in an effort to consider the effect of 3-D heat loss through the furnace walls. From the results of the 3-D CFB analysis, the heat-up time increases up to 32.5 seconds under the same conditions. When the IR heater temperature in creases up to 573 K, the heat-up time decreases to 12 seconds for the one-dimensional analytical solution and to 13.5 seconds for the 3-D CFD analysis, respectively.

TFT-LCD 생산공정을 위한 실리콘 펌프 및 제어시스템에 관한 연구 (Study on the Silicon Pump and Control System for TFT-LCD Manufacturing Process)

  • 박형근
    • 한국산학기술학회논문지
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    • 제13권8호
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    • pp.3618-3622
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    • 2012
  • 본 연구에서는 LCD 생산라인에서 장기적으로 정체상태에 있는 모듈의 수율을 높이고, 현재 TFT-LCD 생산공정에 필수적인 고압의 실리콘주입 장비 및 정밀 제어시스템을 개발하였다. 본 개발을 통하여 향후 본격생산을 준비중인 차세대 디스플레이 생산라인뿐만 아니라 중국으로 이전중인 LCD 생산 설비의 라인 환경에서 장비의 효율을 최대한 발휘함으로써 신규 투자비용을 최소화하고 최대의 효과를 창출할 수 있도록 세부 동작 시퀀스를 제어하기 위한 H/W와 S/W 시스템을 생산라인에 실장하였다. 또한, Fast-evacuating을 위한 Vacuum pump 구조를 제안하고 Pump control 회로 설계 및 실험을 통해 제품화하였다.

TFT-LCD 제조 공정의 Slim MES를 위한 생산계획 프레임워크 (A Production Planning Framework for Slim MES in TFT-LCD Lines)

  • 서정대
    • 한국산학기술학회논문지
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    • 제12권5호
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    • pp.2038-2047
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    • 2011
  • 본 논문에서는 TFT-LCD(Thin Film Transistor-Liquid Crystal Display) 제조 공정 중 Module 공정의 Slim MES(Manufacturing Execution System)를 위한 생산계획 프레임워크(framework)개발에 관해 연구한다. TFT-LCD 제조 공정 중 Module 공정의 라인 구성 및 기능은 각 제조 현장마다 차이가 있다. 본 논문은 이러한 차이를 반영하는 제조현장 맞춤형 MES를 위한 생산계획 프레임워크를 제시한다. 먼저 TFT-LCD Module 공정의 분석을 통해 생산계획 프로세스를 파악한다. 그런 다음 현장 상황 제약조건을 반영한 수리적 모델링을 제시하고 이에 대한 최적 스케줄의 도출을 사례를 통해 제시한다. 또한 현장 상황을 반영한 디스패칭(dispatching) 룰에 의한 스케줄 생성 과정을 제시하고 성능실험 결과를 제시한다. 마지막으로 Slim MES를 위한 생산계획 프레임워크 설계 과정을 제시한다.

LCD 제품의 광학 성능 향상을 위한 백라이트 유닛용 도광판의 최적설계 (An integrated design approach for Light Guide Panel(LGP) of Back Light Unit(BLU) to improve the Optical Performance of Liquid Crystal Display(LCD))

  • 이갑성;정재호;윤상준;최동훈
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1048-1052
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    • 2008
  • Difficulties in developing process of Liquid Crystal Display(LCD) products such as frequent design modifications, various design requirements, and short-term development period bring on the need of integrated design approach that is efficient and easy to handle. Back Light Unit(BLU) of the LCD, which drastically affects the optical performance of LCD products, is divided into in-coupling part and out-coupling part. Serration of the in-coupling part flattens the light received from point light sources and dot pattern of the out-coupling part regularizes the light sent to screen. Therefore, the optical performance of a LCD product is largely influenced by the shape of serration and the arrangement of dot pattern. In this research, a new design approach which enables to improve the optical performance of LCD products and overcome the prementioned difficulties in developing process of LCD products is proposed. The shape of serration is parameterized to 3 parameters and out-coupling part is partitioned into 10 partitions to apply the optimization technique to this problem. 3 parameters for the shape of serration and densities of 10 partitions are used as design variables in the design optimization. Optical simulation tool named SPEOS is used to evaluate the optical performance of the LCD product. Since the optical simulation uses the random ray tracing technique, numerical noise may possibly be included in the simulation process. To solve the problem caused by numerical noise, the PQRSM which can stably find the solution of the noise problem is used in this research.

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LCD 패널 Review & Repair 장비의 결함수정 자동화 알고리즘 (Auto Defect Repair Algorithm for LCD Panel Review & Repair Machine)

  • 이우철;임성묵;이승기;정수화;홍순국
    • 한국레이저가공학회지
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    • 제15권1호
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    • pp.6-9
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    • 2012
  • In TFT-LCD manufacturing process, various defects are generated by manufacturing machine trouble or particle. These defects can be repaired through the TFT-Laser repair process that only can't be automated in TFT-LCD manufacturing Process. In this Paper, we propose auto defect algorithm for TFT-LCD laser repair machine using image processing algorithm in order to automate process. Proposed algorithm can detect very small defects (< 2um) in 98% success ratio, and generated laser repair path guarantee highly precise position accuracy. Through proposed system, much of the work still done the old-fashioned way, by hand, can be automated and manufacturing company can be strengthed the competitiveness of cost.

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LCD Module내 COF Bending에 따른 Lead Broken Failure의 개선 (Improvement of COF Bending-induced Lead Broken Failure in LCD Module)

  • 심범주;최열;이준신
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.265-271
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    • 2008
  • TCP(Tape Carrier Package), COG (Chip On Glass), COF(Chip On Film) are three methods for connecting LDI(LCD Driver IC) with LCD panels. Especially COF is growing its portion of market place because of low cost and fine pitch correspondence. But COF has a problem of the lead broken failure in LCD module process and the usage of customer. During PCB (Printed Circuit Board) bonding process, the mismatch of the coefficient of thermal expansion between PCB and D-IC makes stress-concentration in COF lead, and also D-IC bending process during module assembly process makes the level of stress in COF lead higher. As an affecting factors of lead-broken failure, the effects of SR(Solder Resister) coating on the COF lead, surface roughness and grain size of COF lead, PI(Polyimide) film thickness, lead width and the ACF(Anisotropic Conductive Film) overlap were studied, The optimization of these affecting manufacturing processes and materials were suggested and verified to prevent the lead-broken failure.

New Doping Process for low temperature poly silicon TFT

  • Park, Kyung-Min;You, Chun-Gi;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.303-306
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    • 2005
  • We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

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