• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.99-102
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• 2012

An image scaler is a IP used in a image processing block of display devices to adjust image size. Proposed image scaler adopts line memories instead of a conventional method using a frame memory. This method reduced hardware resources and enhanced data precision by using shift operations that number is multiplied by $2^m$ and divided again at final stage for scaling. Also image scaler increased efficiency of IP by using serial divider to calculate parameters by itself. Parameters used in image scaling is automatically produced by it. Suggested methods are designed by Verilog HDL and implemented with Xilinx Vertex-4 XC4LX80 and ASIC using TSMC 0.18um process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Design & Manufacturing
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• v.13 no.4
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• pp.40-44
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• 2019

The light diffusion component spreads the light from one point evenly over a large area. Various types of light diffusion parts such as films and lenses are applied in the high-tech industries such as LCD display devices, lighting devices, and solar energy generation. Among these, a diffuser sheet (Diffuser Sheet) has a function to uniformly distribute the light, and various studies have been conducted to improve its function. The shape of the conventional light diffusion pattern is mainly made of a dot or hemispherical shape. In this study, a rectangular cone-shaped structure having a light diffusion function and an advantage of controlling the angle of refraction of light was fabricated by using a solenoid indentation process. The change in shape of the indentation structure was analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.6-6
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• 2010

Indium Tin Oxide (ITO)를 포함한 Transparent Conduction Oxide (TCO)는 LCD, OLED와 같은 Display, 그리고 Solar Cell 등 광신호와 전기신호간 변환이 필요한 모든 Device에 반드시 필요한 핵심 물질로, 특히 고특성 Display의 투명전극에서 요청되는 95% 이상의 투과도와 $15\;{\Omega}/{\square}$ 이하의 면저항 특성을 동시에 만족할 수 있는 기술은 현재까지 Plasma Sputtering 공정으로 $160^{\circ}C$ 이상에서 증착된 ITO 박막이 유일하다. 그러나, 최근 차세대 기술로서 Plastic Film을 기반으로 하는 Flexible Display 및 Flexible Solar Cell 구현에 대한 요구가 급증하면서, Plastic Film 기판위에 Plasma Damage이 없이 상온에 가까운 저온 ($100^{\circ}C$ 이하)에서 특성이 우수한 ITO 투명전극을 형성 할 수 있는 기술의 확보가 중요한 현안이 되고 있다. 지난 10년 동안 $100^{\circ}C$이하 저온에서 고특성의 ITO 또는 TCO 박막을 얻기위한 다양한 연구와 구체적인 공정이 활발히 연구되어 왔으나, ITO의 결정화 온도 (통상 $150{\sim}180^{\circ}C$)이하에서 증착된 ITO박막은 비정질 상태의 물성적 특성을 보여 원하는 전기적, 광학적 특성확보가 어려웠다. 본 논문에선 기본적으로 절연체 특성을 가져야 하는 산화물인 TCO가 반도체 또는 도체의 물리적 특성을 보여주는 기본원리의 고찰을 토대로, 재료학적 특성상 Crystalline 구조를 보여야 하는 ITO (Complex Cubic Bixbyte Structure)가 Plasma Sputtering 공정으로 저온에서 증착될 때 비정질 구조를 갖게 되는 원인을 규명하고, 이를 바탕으로 저온에서 증착된 ITO가 Crystalline 구조를 유지 할 수 있게 하고, Stress Control에 유리한 Nano-Crystalline 박막을 형성하면서 Crystallinity를 임의로 조절 할 수 있는 새로운 기술인 Magnetic Field Shielding Sputtering (MFSS) 공정과 최근 성과를 소개한다. 한편, 또 다른 새로운 저온 TCO 박막형성 기술로서, 유기반도체와 같은 Process Damage에 매우 취약한 유기물 위에 Plasma Damage 없이 TCO 박막을 직접 형성할 수 있는 Neutral Beam Assisted Sputtering (NBAS) 기술의 원리를 설명하고, 본 공정을 적용한 Top Emission OLED 소자의 결과를 소개한다. 또한, 고온공정이 수반되는 Solar Cell용 투명전극의 경우, 통상의 TCO박막이 고온공정을 거치면서 전기적 특성이 열화되는 원인을 규명하고, 이에 대한 근본적 해결 방법으로 ITO 박막의 Dopant인 Tin (Sn) 원자의 활성화를 증가시킨 Inductively Coupled Plasma Assisted DC Magnetron Sputtering (ICPDMS)의 원리와 박막의 물성적 특성과 내열 특성을 소개한다.

• Laser Solutions
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• v.14 no.2
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• pp.17-23
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• 2011

Active thin films are ubiquitous in the manufacture of all forms of flat panel display (FPD). One of the most widely employed thin films is indium tin oxide (ITO) and metal films used electrically conductive materials in display industries. ITO is widely used for fabrication of LCD, OLED device, and many kinds of optical applications because of transparency in visible range and its high conductivity and metal films are also widely employed as electrodes in various electric and display industries. It is important that removing specific area of layer, such as ITO or metal film on substrate, to fabricate and repair electrode in display industries. In this work, we demonstrate efficient selective ablation process to ITO and aluminum film on glass using a femtosecond laser (${\lambda}p=1025nm$) respectively. The femtosecond laser with wavelength of 1025nm, pulse duration of 400fs, and the repetition rate of 100kHz was used for selectively removing ITO and Al on glass in the air. We can successfully remove the ITO and Al films with various pulse energies using a femtosecond laser.

• Journal of Technology Innovation
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• v.20 no.2
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• pp.1-28
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• 2012

The government-supported research institutes' system seems to face a turning point as the country's innovation system, shaped in the industrialization process, now reveals its own limitations. This makes the transformation of the innovation system unavoidable. Korea began to emerge as a leader in several technological areas including semiconductor, TFT-LCD, and handset, in a few cases even outpacing advanced countries. This has changed the very nature of the problems and questions to be resolved. This study analysed the structural limitations and challenges of government-supported research institutes focused ETRI. In a nutshell, The innovation system of government-supported research institutes seems to face a situation where the new innovation environment is conflicting and competing with the legacy of the past: governance, planning, budget, personnel, evaluation system. There are needs for change and thus tries to achieve a innovation system transition and build a new vision and management system including a new mode of working for post-catchup innovation.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Journal of Navigation and Port Research
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• v.34 no.2
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• pp.131-136
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• 2010

The aim of the paper is to solve the problem of customer reduction due to the difficulty of parts sourcing which impacts production delay and delivery delay in SC networks. Furthermore, this paper is to suggest the new inventory policy of MTS in order to solve the problem of current inventory policy. In order to compare two policies, a LCD maker is selected as a case study and the real data for 2007 years is used for simulation input. The maker uses MTO policy for parts sourcing which has the problem of lead time even if it has some advantage of inventory cost. Based on current process. The simulation program of AS-IS model and TO-BE model using ARENA 10 version is developed for evaluation. In a result, the order number of two policies shows that MTO is 52 and MTS is 53. However the quantity of order shows big difference such that MTO is 168,460 and MTS is 225,106. Particularly, the lead time of new inventory policy shows much shorter that that of MTO such that MTO 100 is days and MTS is 16 days. In spite of short lead time by MTS policy, new policy has to take burden of inventory cost per year. Total inventory cost per year by MTS policy is US$ 11,254 and each part inventory cost is that POL is US$ 1,807, LDI is US$ 2,166 and Panel is US$ 7,281. The implication of the research is that the company has to consider the cost and the service simultaneously in deciding the inventory policy. In the paper, even if the optimal point of deciding is put into tactical area, the ground of decision is suggested in order to improve the problem in SC networks.

• ETRI Journal
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• v.37 no.6
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• pp.1143-1153
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• 2015

In this paper, we propose an efficient architecture for a real-time image stitching engine for vision SoCs found in motor vehicles. To enlarge the obstacle-detection distance and area for safety, we adopt panoramic images from multiple telegraphic cameras. We propose a stitching method based on a fixed homography that is educed from the initial frame of a video sequence and is used to warp all input images without regeneration. Because the fixed homography is generated only once at the initial state, we can calculate it using SW to reduce HW costs. The proposed warping HW engine is based on a linear transform of the pixel positions of warped images and can reduce the computational complexity by 90% or more as compared to a conventional method. A dual-core SW/HW image stitching engine is applied to stitching input frames in parallel to improve the performance by 70% or more as compared to a single-core engine operation. In addition, a dual-core structure is used to detect a failure in state machines using rock-step logic to satisfy the ISO26262 standard. The dual-core SW/HW image stitching engine is fabricated in SoC with 254,968 gate counts using Global Foundry's 65 nm CMOS process. The single-core engine can make panoramic images from three YCbCr 4:2:0 formatted VGA images at 44 frames per second and frequency of 200 MHz without an LCD display.