• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.717-718
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.134-134
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• 2004

LCD-BLU의 고효율 광특성을 유도하기 위한 도광판의 초미세패턴 형상가공기술, 미세사출성형기술과 미세형상패턴 광학해석기술 및 전광특성 측정 및 보완기술이 요구된다. 이러한 기술들을 바탕으로 LCD-BLU의 고단가의 주요요인인 기능성 광학 sheet(prism sheet 등)를 연차적으로 제거 및 도광판에 기능을 결합하는 기술개발이 본 연구의 목적이다.(중략)

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.1-4
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• 2000

We have developed a high performance vertical alignment TFT-LCD, that shows a high light transmittance, and wide viewing angle characteristics with an unusually high contrast ratio. In order to optimize the electro-optical properties we have studied the effect of cell parameters, multi-domain structure and retardation film compensation. With the optimized cell parameters and process conditions, we have achieved a 24" wide UXGA TFT-LCD monitor (16:10 aspect ratio 1920X1200) showing a contrast ratio over 500:1, panel transmittance near 4.5%, response time near 27 ms, and viewing angle higher than 80 degree in all directions.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.85-86
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• 2007

As the manufacturing capacity needs for large size LCD TV shifts very fast into next generation, equipment manufactures face more challenges in development of the systems which can accommodate productivity, reliability and high process quality requirements from the panel makers. AKT committed to continue its contribution to the growth of the LCD market by providing excellent PECVD products. The cost containment and performance improvement are key challenges for large size processing equipment development and this presentation discusses various challenges and AKT's solutions in developing large size PECVD equipment beyond Gen. 8.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.130-137
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• 2006

TFT-LCD(Thin Film Transistor Liquid Crystal Display) module is representative commercial product of FPD(Flat Panel Display). Thickness of TFT-LCD module is very thin. It is adopted for major display unit for IT devices such as Cellular Phone, Camcorder, Digital camera and etc. Due to the harsh user environment of mobile IT devices, it requires complicated structure and tight assembly. And user requirements for the mechanical functionalities of TFT-LCD module become more strict. However, TFT-LCD module is normally weak to high level transient mechanical shock. Since it uses thin crystallized panel. Therefore, anti-shock performance is classified as one of the most important design specifications. Traditionally, the product reliability against mechanical shock is confirmed by empirical method in the design-prototype-drop/impact test-redesign paradigm. The method is time-consuming and expensive process. It lacks scientific insight and quantitative evaluation. In this article, a systematic design evaluation of TFT-LCD module for mobile IT devices is presented with combinations of FEA and testing to support the optimal shock proof display design procedure.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.4
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• pp.1391-1398
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• 2010

Reuse feasibility of MBR effluent of S Electronic Company's organic wastewater as a LCD process water was investigated by a $32m^3/d$ pilot-scale RO membrane process. The effects of operating pressure and permeate flux at constant 85% recovery of RO membrane process using MBR effluent were analyzed for transmembrane pressure and period for CIP by membrane fouling as well as rejection of TOC and conductivity. MBR effluent requires additional treatment to meet the LCD process water quality criteria of TOC<1 mg/L and conductivity<$100{\mu}S/cm$ which is stringent as compared with those of conventional reuse water quality criteria. The RO process operated at 85% recovery with stepwise increasing of permeate fluxes from 12.5 LMH to 22.0 LMH was able to meet LCD process water quality criteria. However, the transmembrane pressure increased and the period of CIP decreased as increasing permeability fluxes due to fouling of RO membrane. The optimum operational conditions of RO membrane process were permeate fluxes of 16.5~18.5 LMH with operating pressure of $6.7{\sim}12.4kgf/cm^2$ and CIP period of 20~25 days at constant 85% recovery.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1038-1039
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• 2004

We developed a new photoresist which was composed of polyaniline, uv-curing agent, N-methyl-2- pyrrolidine (NMP) and N-Butyl alcohol (BuOH) as solution. The photoresist is characterized by the capability of being developed in water. We successfully patterned pentacene thin film, which was vulnerable to organic solvent and thus could not be patterned by the conventional photolithography process, with the water soluble photoresist and the minimum feature size was found to be 2um.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.392-393
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• 2006

Direct Printing Process is a suitable fabrication technique to develope pigment components whose dimensions are in nano. The success of this process depends on the sysmatic preparation of pigment millbase. Conventional millbase dispersions are constituted of the organic pigments, monomer, dispersant and solvents. An experimental study on the rheology of millbase dispersions is presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.637-640
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• 2008

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.