• 제목/요약/키워드: LCD Process

검색결과 634건 처리시간 0.082초

The fabrication of TFTs for LCD using the 3mask process

  • Yoo, Soon-Sung;Cho, Heung-Lyul;Kwon, Oh-Nam;Nam, Seung-Hee;Chang, Yoon-Gyoung;Kim, Ki-Yong;Cha, Soo-Yeoul;Ahn, Byung-Chul;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.948-951
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    • 2005
  • New technology that reduces photolithography process steps from 4 to 3 in fabrication of TFT LCD is introduced. The core technology for 3mask-TFTs is the lift-off process [1], by which the PAS and PXL layer are formed simultaneously. To evaluate the stability of this lift-off process, outgases from photo resist on a substrate during ITO deposition and the quality of ITO film were analyzed and the conventional photo resist stripper machine which operates lift-off process was examined to see its ability to reduce particle problems of the machine. Through the development of total process and design for TFTs using this 3mask technology, panels in TN and IPS modes which exhibit same performances of a display using a conventional process were achieved. In addition, this process was already verified in the mass production line and now some products are being produced by the 3mask technology.

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A Study on Data Mining Application Problem in the TFT-LCD Industry

  • Lee, Hyun-Woo;Nam, Ho-Soo;Kang, Jung-Chul
    • Journal of the Korean Data and Information Science Society
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    • 제16권4호
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    • pp.823-833
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    • 2005
  • This paper deals the TFT-LCD process and quality, process control problems of the process. For improvement of the process quality and yield, we apply a data mining technique to the LCD industry. And some unique quality features of the LCD process are also described. We describe some preceding researches first and relate to the TFT-LCD process and the problems of data mining in the process. Also we tried to observe the problems which need to solve first and the features from description below hazard must be considered a quality mining in LCD industry.

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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
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    • 제7권3호
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    • pp.1-4
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

Fabrication of TFTs for LCD using 3-Mask Process

  • You, Soon-Sung;Cho, Heung-Lyul;Kwon, Oh-Nam;Nam, Seung-Hee;Chang, Yoon-Gyoung;Kim, Ki-Yong;Cha, Soo-Yeoul;Ahn, Byung-Chul;Chung, In-Jae
    • Journal of Information Display
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    • 제6권3호
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    • pp.18-21
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    • 2005
  • A new technology for reducing photolithography process from a four step to a three step process in the fabrication of TFT LCD is introduced. The core technology for 3-mask-TFT processes is the lift-off process [1], by which the PAS and PXL layers can be formed simultaneously. A different method of the lift-off process was developed in order to enhance the performance of efficiency with conventional positive and not negative PR which is the generally used in other lift-off process. In addition, the removal capacity of the ITO/PR in lift-off process was evaluated. The evaluation results showed that the new process can be run in conventional TFT production condition. In order to apply this new process in existing TFT process, several tests were conducted to ensure stability of the TFT process. It was found that the outgases from PR on the substrate in ITO sputtering chamber do not raise any problem, and the deposited ITO film beside the PR has conventional ITO qualities. Furthemore, the particles that were produced due to the ITO chips in PR strip bath could be reduced by the existing filtering system of stripper. With the development of total process and design of the structure for TFT using this technology, 3-mask-panels were achieved in TN and IPS modes, which showed the same display performances as those with the conventional 4mask process. The applicability and usefulness of the 3-mask process has already verified in the mass production line and in fact it currently being used for the production of some products.

2.22-inch qVGA ${\alpha}$-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, J.B.;Park, S.;Heo, S.K.;You, C.K.;Min, H.K.;Kim, C.W.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1649-1652
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

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Study on the n+ etching process in TFT-LCD Fabrication for Mo/Al/Mo Data Line

  • Choe, Hee-Hwan;Kim, Sang-Gab;Lim, Soon-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1111-1113
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    • 2004
  • n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

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The Improvement of Display Brightness in LCD-TV Panel through the Optimization of Organic Passivation Process

  • Lee, Yeong-Beom;Lee, Hi-Kuk;Kim, Shi-Yul;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.235-238
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    • 2008
  • We report the improvement in brightness through the optimization of the organic passivation process for fabricating a TFT substrate for LCD-TV panel. In conclusion, the optimization of organic passivation was accomplished with improving over $10\;cd/m^2$ in brightness than that of a conventional organic passivation process.

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폐 LCD판넬의 유가성분 회수를 위한 폐 LCD유리의 발포공정 (Foaming Process of Waste LCD Glass for the Recovery of Valuable Materials from Waste LCD Pannel)

  • 이철태;박태문;김정민
    • 공업화학
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    • 제23권2호
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    • pp.195-203
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    • 2012
  • 폐 LCD유리의 재활용 방안은 평판 디스플레이용 폐 LCD판넬의 전체 재활용 공정의 확립을 위한 중심요건이다. 본 연구는 폐 LCD유리를 보온단열재, 흡음차음제, 토목용 경량골재 또는 수처리용 담체 등의 원료로 재활용하기 위한 발포공정의 기초공정으로서 폐 LCD유리의 분쇄특성, 적절한 탄소발포제의 선정, 유가물 회수를 위한 산침출 후 잔유된 유리질의 물성 및 이들의 발포화의 문제점을 조사하였다. 폐 LCD유리의 분쇄공정을 통해 발포용 원료로 사용가능한 미분화가 가능하였으며, 고융점을 갖는 LCD 유리의 발포화를 위해서는 결정성 천연흑연이 적절하였으며, 산 침출 후 잔사인 슬러지 상태의 폐유리성분도 발포체의 원료로 재활용될 수 있음을 확인하였다.

LCD 제조공정에서 사용되는 화학물질의 종류 및 특성 (Types & Characteristics of Chemical Substances used in the LCD Panel Manufacturing Process)

  • 박승현;박해동;노지원
    • 한국산업보건학회지
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    • 제29권3호
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    • pp.310-321
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    • 2019
  • Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.