• Clean Technology
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• v.14 no.2
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• pp.123-128
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• 2008

The waste solution, which was discharged from the recovery process of LCD etching solution, consists of 15 wt% nitric acid and 20 wt% acetic acid. In this study, it was conducted to separate acid individually from the mixed acid by vacuum evaporation under -760 mmHg gauge and at $40^{\circ}C$. We have investigated evaporation behavior of acid as a function of temperature. There have been problems that tiny amount of nitric acid were evaporated simultaneously above $33^{\circ}C$. Thus, efforts were conducted to recover acetic acid by vacuum evaporation with adding $H_2O$, waste mixed acid and 20 g/L NaOH for a curb on evaporation of nitric acid. By adding $H_2O$, evaporation of nitric acid was reduced from 7% to 0.78%. However, it was reduced from 7% to 0.25% by adding mixed acid. In view of the results achieved so far, we may expect to separate the etching solution individually by controlling vacuum conditions.

• Resources Recycling
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• v.15 no.5 s.73
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• pp.26-32
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2006.05a
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• pp.90-94
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to removal of impurities to tess than 1ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, we have been clearly established that a mixed system of solvent extraction, diffusion dialysis and ion-exchange technique, which made individually the most of characteristics is developed to commercialize in an efficient system for recovering the high-purity phosphoric acid. By applying vacuum evaporation, the yield of the process are almost 99% removal of nitric acid and acetic acid was achieved. And by applying the solvent extraction method with tri-octyl phosphate(TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio O/A=1/3 with four stages and the stripping of nitric acid from organic phase is attained at a ration of O/A=1 with six stages by distilled water. About 97% and 76% removal of Al and Mo were achieved by diffusion dialysis. Essentially complete less than 1ppm removal of Al, Mo by using ion exchange ion resin and purification of the phosphoric acid was obtain.