• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.111-114
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• 1995

This paper describes the imidization of PAAS(polyamic acid alkylamine salts) Langmuir-Blodgett (LB) films and the electrical properties of PAAS and polyimide(PI) LB films, The imidization conditons were investigated by TGA(Thermal Gravi-tational Analysis). FT-IR and UV/ visible absorption spectra. A thermal imidiczation was peformed at 300$^{\circ}C$ for 1 hour. The electrical properties of the PAAS and polymide LB films were measured by current-voltate(L-V) characteristics It shows that the electrical condcutivity of PL LB films is about 10 $\^$-15/S/cm which is two orders of magnetiude lower than that of the PAAS LB films A Schottky effect was also observed in both films.

• 한국응용과학기술학회지
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• 제17권3호
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• pp.178-182
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• 2000

We have investgated UV-Vis absorbance to observe the photoisomerization using the mixture solutions in chloroform and LB monolayers mixed with DLPE and 8A5H containing azobenzene which showed reversible cis-trans photoisomerization irradiated by alternate lights. We have found that the absorbance spectrums of the mixture solutions and LB monolayers were reversibly induced to cis-trans photoisomerization irradiated by alternate lights. In addition, the absorbance of both solution and LB monolayer mixed with 8A5H and DLPE were reversibly by alternate temperatures. As a results, the 1:1(by volume) mixture ratio of 8A5H and DLPE was more flexible and reversible cis-trans photoisomerization than the others.

• Tribology and Lubricants
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• 제19권6호
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• pp.329-334
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• 2003

The antiwear properties of amphiphilic monolayers and composite multilayer on silicon surface were investigated using micro­tribometer and Auger Electron Spectroscopy. Langmuir­Blodgett (LB) monolayers from behenic acid, 2,4­heneicosanedione(HD) and its lopper complex((HD)$_2$Cu) were fabricated on silicon surface and the composite multilayer of 5­bilayer of (HD)$_2$Cu was fabricated on the surface of octadecyltrichlorosilane (OTS) self­assembled monolayer (SAM). We observed that LB monolayers and the composite multilayer exhibited a steady and excellent friction response when compared with the OTS SAM. These LB mono and multilayer also showed much higher wear­resistance than the OTS SAM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1297-1299
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• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 가을 학술발표회 논문집
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• pp.159-160
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• 2003

금속과 유사한 전도성을 가진 공액이중결합의 전기전도성 고분자를 사용한 Langmuir-Blodett (LB) 막의 제조에 관한 연구는 그 범위가 넓으며, 지금까지 많은 연구 논문들이 보고되고 있다[1]. 특히 전도성이 뛰어난 polyaniline, polypyrrole, polythiophene은 전도성과 stability가 우수하여 전기 전도성 LB 막에 대한 연구들이 많이 진행되어 왔다[2]. 본 연구에서는 이와 같은 전기전도성 유기물질을 사용한 전도성 LB막이 수직방향에 비해 수평방향의 전기전도도가 크다는 전기적 장점을 이용하여 전도성 LB막을 제조하기 위해 새로운 전도성 고분자를 합성하여 전기 전도성을 띄는 LB 막을 제조하였다[3,4]. (중략)

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.757-761
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• 2001

We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.

• 전자공학회논문지 IE
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• 제43권4호
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• pp.99-104
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• 2006

전기 전자 소자를 제작하는 방법으로 Langmuir-Boldgett(LB)법이 많은 관심을 받고 있다. 수면위에 형성된 단분자막을 압축 또는 확장하면, 분자가 배향하는 과정에서 맥스웰 변위전류(MDC)가 흐른다. MDC는 전속밀도의 변화에 기인해서 흐르므로 MDC를 측정하는 것에 의해 분자의 동적 거동 관찰할 수 있다. 단분자막을 압축하는 속도와 분자면적은 서로 선형적인 관계를 갖고 있다. 본 연구에서는 압축속도를 30, 40, 50mm/min으로 달리하여 단분자막의 동적 거동을 관찰하였으며 LB법을 이용하여 Arachidic acid 단분자를 slide glass 위에 Y-type으로 9$\sim$21층의 다층막을 누적하여 Au/Arachidic acid/Al 소자를 제작하였다. 또한 Metal-Insulator-Metal(MIM) 소자의 I-V 특성을 측정하여 전극간의 거리가 커질수록 절연특성이 좋아짐을 확인하였다.

• 대한전기학회논문지
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• 제44권10호
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.132-135
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• 1995

This paper describes the electrochemical and photochemical behavior of amphiphilic Os bipyridine compelx adsorbed on SnO$_2$electrodes by the Langmuir-Blodgett(LB) film as monolayer state. Theoretical equation of cyclicvoltammetry for redox species were discussed. And the cyclic voltammogram were simulated taking account theinteraction parameters. From these obtained values, we could fit almost all measured voltammograms with these parameters.