• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.210-213
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• 1989

An early phase of the OMVPE and LACVD studies of growing AlGaAs/GaAs films is reported. The AlGaAs/GaAs epitaxy to the level of obtaining MOW structures is a crucial step for the fabrication of the devices such as SEED and/or DOES which are basic parts of the OEIC. The analysis of the OMVPE system is shown for this purpose and the basic results of the LACVD are also presented.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.55-55
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• 2007