• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.411-416
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• 2005

We have designed an extended L-band Erbium-doped fiber amplifier to amplify 1625 nm optical time domain reflectometry signal for a long distance monitoring system. The proposed amplifier has a dual-stage structure without an isolator. Gain improvement of 5.1 dB has been achieved by adding a fiber Bragg grating and a narrow band pass filter. As a result, the 16.3 dB gain and 7.1 dB noise figure has been successfully accomplished.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1666-1671
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• 2022

The structure of a high-power gain-flattened long wavelength band (L-band) optical amplifier was optimized, which was implemented for 64-channel wavelength division multiplexed optical signals with a channel spacing of 50 GHz. The output characteristics of this L-band amplifier were measured and analyzed. The amplifier of the optimized two-stage amplification configuration had a flattened gain of 20 dB within 1 dB deviation between 1570 and 1600 nm for -2 dBm input power condition. The noise figure under this condition was minimized to within 6 dB in the amplification bandwidth. The gain flattening was realized by considering only the characteristics of gain medium in the amplifier without using additional optical or electrical devices. The proposed amplifier consisted of two stages of amplification stages, each of which was based on the erbium-doped fiber amplifier (EDFA) structure. The erbium-doped fiber length and pumping structures in each stage of the amplifier were optimized through experiments.

• Journal of Satellite, Information and Communications
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• v.11 no.1
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• pp.1-5
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• 2016

In this paper, High Power Pulsed Amplifier with wide-band characteristic is implemented for L-band Navigational Aid(NAVAID). Due to the characteristics of L-Band NAVAID, implemented SSPA is demanded characteristics of high RF power, high linearity and high efficiency. Therefore, in this paper, efficiency characteristic is improved by modified class F technique. And linearity characteristic is improved by balance structure using hybrid coupler, $2^{nd}$ & $3^{rd}$ harmonic trap and anti-phase technique using non-linear characteristics of drive amplifier. Implemented SSPA shows that bandwidth of 300MHz, RF Output power of 1.5KW and efficiency of 55%.

• Journal of IKEEE
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• v.20 no.3
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• pp.279-284
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• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1249-1255
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• 2008

1530nm band has been studied as pump wavelength for long-wavelength-band erbium-doped fiber amplifier (L-band EDFA). The pump source is built using a tunable light source and cascaded conventional-band (C-band) EDFA. The L-band EDFA uses a forward pumping scheme. Within the 1530nm band, 1545nm pump demonstrates 0.45dB/mW gain coefficient, which is twice better than that of conventional 1480nm pumped EDFA. The noise figure of 1530nm pump is at worst 6.36dB, which is 0.75dB higher than that of 1480nm pumped EDFA. Such high gain coefficient indicates that the L-band EDFA consumes low power.

• ETRI Journal
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• v.23 no.1
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• pp.1-8
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• 2001

The performance of a long wavelength-band erbium-doped fiber amplifier (L-band EDFA) using 1530nm-band pumping has been studied. A 1530nm-band pump source is built using a tunable light source and two C-band EDFAs in cascaded configuration, which is able to deliver a maximum output power of 23dBm. Gain coefficient and noise figure (NF) of the L-band EDFA are measured for pump wavelengths between 1530nm and 1560nm. The gain coefficient with a 1545nm pump is more than twice as large as with a 1480nm pump. It indicates that the L-band EDFA consumes low power. The noise figure of 1530nm pump is 6.36dB at worst, which is 0.75dB higher than that of 1480nm pumped EDFA. The optimum pump wavelength range to obtain high gain and low NF in the 1530nm band appears to be between 1530nm and 1540nm. Gain spectra as a function of a pump wavelength have bandwidth of more than 10nm so that a broadband pump source can be used as 1530nm-band pump. The L-band EDFA is also tested for WDM signals. Flat Gain bandwidth is 32nm from 1571.5 to 1603.5nm within 1dB excursion at input signal of -10dBm/ch. These results demonstrate that 1530nm-band pump can be used as a new efficient pump source for L-band EDFAs.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.12-16
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• 2003

This paper presents a compensation method for a temperature-dependent gain tilt in L-band erbium-doped fiber amplifier using a voltage-controlled attenuator. The gain tilts in the L-band of 1570-1605 nm due to a temperature change have negative slopes, whereas they have positive slopes for the increasing optical input powers in a saturation region. The proposed method utilizes these opposite gain variations to compensate for the gain tilt over a wide range of temperature. While applying forty channels with a channel spacing of 100 GHz in the L-band and changing the ambient temperature from 0 to $50^{\circ}C$, the compensation method maintained the gain deviation within 1 dB.

• ETRI Journal
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• v.24 no.2
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• pp.81-96
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• 2002

This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.3
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• pp.135-140
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• 2019

In this paper, a frequency split type broadband drive amplifier operating in the L, S and C bands was designed and fabricated. Transistor is difficult to efficiently use when the fractional bandwidth of the drive amplifier is more than 100%, In particular, the characteristics of the driving amplifier are important for operating the power amplifier in which the characteristics of the output power and the efficiency are sensitively changed according to the frequency band. A frequency split methods was applied to maximize the bandwidth of a drive amplifier and to divide the output of the drive amplifier into low band and high band so that the transistor of the power amplifier located at the rear of the drive amplifier can be efficiently used. The designed drive amplifier was fabricated in GaAs HBT technology and 9-layer SiP, and verified by the measurements. The fabricated drive amplifier shows a gain of more than 8 dB and an output power of more than 15 dBm in the operating frequency range.

• Journal of the Optical Society of Korea
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• v.7 no.2
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• pp.67-71
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• 2003

For a more detailed understanding of the mechanism of an L-band erbium-doped fiber amplifier, we investigated 980 nm absorption, signal amplification and forward and backward amplified spontaneous emission along the erbium-doped fiber. In addition, we compared performances of the erbium-doped fiber amplifier with and without a fiber Bragg grating.