• Title/Summary/Keyword: Kyropoulos method

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CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process (사파이어 단결정의 Kyropoulos 성장시 도가니 형상에 따른 유동장 및 결정성장 거동의 CFD 해석)

  • Ryu, J.H.;Lee, W.J.;Lee, Y.C.;Jo, H.H.;Park, Y.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.115-121
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    • 2012
  • Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth (전산해석을 통한 키로플러스 사파이어 단결정 성장공정의 유동 및 remelting 현상 분석)

  • Kim, Jin Hyung;Park, Yong Ho;Lee, Young Cheol
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.3
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    • pp.129-134
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    • 2013
  • Sapphire wafers are used as an important substrate for the production of blue LED (light emitting diode) and the LED's performance largely depends on the quality of the sapphire single crystals. There are several crystal growth methods for sapphire crystals and Kyropoulos method is an efficient way to grow large diameter and high-quality sapphire single crystals with low dislocation density. During Kyropoulos growth, the convection of molten melt is largely influenced by the hot zone geometry such as crucible shape, heater and refractory arrangements. In this study, CFD (computational fluid dynamics) simulations were performed according to the bottom/side ratios (per unit of the crucible surface area) of heaters. And, based on the results of analysis, the molten alumina flows and remelting phenomena were analyzed.