• Journal of Practical Engineering Education
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• v.13 no.3
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• pp.545-558
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• 2021

As the "Partial Amendment to the Vocational Competency Development Act" was passed, and the mandatory refresher training was legislated in March 2020, HRD education institutions has prepared a plan for the improved refresher training to strengthen the competency of vocational training teachers and to improve the quality of refresher training. However, as demand for refresher training is concentrated in partial occupations, it is necessary prepare a separate plan to recognize personal learning as a refresher training for a minority of teachers who are not provided with a training. Therefore, this study aims to identify areas of a minor training occupations that don't exist many participants for a refresher training and to derive ways to recognize their multiple education experiences and participations instead of attending a refresher training. To this end, literature review, analysis of current situation, consultation with stakeholders, and written interviews with experts were conducted. As a result, a minority of training occupations was defined as type 1 and type 2 and ways of the recognition of refresher training for minority of training occupations which embrace various educational types were derived. Lastly, discussions and suggestions on the expansion of the scope of the recognition of refresher training for minority of training occupations were provided.

• Asian Journal of Business Environment
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• v.2 no.2
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• pp.5-11
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• 2012

Purpose - This research examined the relationship between business orientation and business goals and satisfaction of Korean-American business owners. Research design/data/methodology - Entrepreneurial Orientation (EO) and Small Business Orientation (SBO) were the theoretical constructs underlying this research. The responses from 200 Korean-American business owners who participated in the 2005 National Minority Business Owner Surveys were used for data analysis. Results - Noneconomic business goal was positively related to business owners' SBO tendency, and those with a SBO tendency had the higher business satisfaction than those with EO. Conclusions - The findings suggest that policy makers should develop business assistance programs that correspond with owners' business orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.6
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• pp.244-252
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• 1985

A model is presented to explain charging phenomena into the oxide layer when a metal-oxide-silicon(MOS) capacitor is driven by a large amplitude and high frequency ac signal sufficient to produce avalanche injection in the silicon. During avalanche, minority carriers are injected. It is assumed that some of these minority carriers attain sufficient energy to surmount the potential barrier at the interface, and then inter the oxide. Measurements of C-V curves are made for the MOS capacitor with p-type silicon substrates before and after avalanche injection. This paper studies how charging in the oxide and the interface depends on oxide properties. It is concluded that this charging effect is related to the presence of water in the oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.401-406
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• 1997

This paper presents preliminary results on the degradation of BJTs(Bipolar Junction Transistors) and MOSFETs(Metal Oxide Semiconductor Field Effect Transistors) by 1MeV electron beam. Exposure experimental results show that the change of minority-carrier life time in base region dominates the behavior of BJTs and that the buildup of charges in oxide region can affect the value of threshold voltage for MOSFETs. It was possible to correlate the decrease of the minority-carrier life time of BJTs with irradiation dose, while the shift of MOSFETs' threshold voltage was not only a function of charge buildup in oxide region.

• Korean Journal of Social Welfare
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• v.63 no.3
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• pp.133-156
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• 2011

This study used the qualitative research for deeply interviewing Chinese-Koreans who live and work in Dearim-dong area, Yeongdeungpo-gu, Seoul, collectively. The variation of recognition to the local community at the migration early and the present and their response for overcoming their pending issues are studied through this, To understand the reality and conflict they encounter, the effort for overcoming the pending issues, the inner change of their own community, their fixed direction and so on becomes the core variables for integrating them to our society. They have formed the enormous cluster and have been already developed as the minority group. They are doing 'the struggle for recognition' for being recognized from the dominant group and trying to approach the politics for overcoming the inferiority of power. Accordingly, the intervention of social welfare to this minority group should be a more active working to protect the fragmentation of our society which can be resulted from the increasing influx of the foreigners and be also an approach to mutual enlightenment for making our society adapt to the phenomena of multi-nations and multi-cultures and for accepting them as the population.

• Korea journal of population studies
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• v.21 no.2
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• pp.144-181
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• 1998

The main purpose of this study is to understand the socio-cultural adaptation and life-styles of the Chinese and Korean immigrants in Vancouver, Canada. Of interest are the immigration policies of the Canadian government and formation of the Chinese and Korean minority societies in Vancouver. Attention is given to estimating the size of the Korean population in Vancouver, utilizing the listings of telephone directory and the proportion of surname Kims in the Korean population. This paper focuses on explaining the distinctive adaptation patterns and socio-cultural characteristics of the Chinese and Korean immigrants. A conceptual scheme of socio-cultual adaptation of the minority immigrants, which is hypothesized as a function of the participation to the host society and the cultural identity, is also developed in this paper. Findings of the analysis suggest that the Chinese and Korean population in Vancouver witnessed a rapid growth since the mid 1980s, when the Canadian government launched the immigration programs for investors and entrepreneurs. It appears that the Chinese and Korean immigrants hold strong ethnic identity and maintain cultural traditions and life-styles of their own. While Chinese immigrants are characterized by active participation to the host society, Korean immigrants tend to confine themselves to the Korean enclave, and thus keep a certain distance from the host society. This appears to be particularly true for the Koreans who immigrated with a status of investor or entrepreneur. As the key force behind the ethnic differences in their adaptation, the role of voluntary associations is stressed. Finally, the future prospects of the Chinese and Korean societies and their acculturation are discussed in this study.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1953-1955
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• 1999

The effects of the local lifetime control on the characteristics of IGBT are investigated using the 2-dimensional device simulator, MEDICI. Many lumped resistive turn-off simulations are carried out to analyze the effects of the minority carrier lifetime, the width, and the position of the region with a reduced local minority carrier lifetime. As a result of these simulations, it is concluded that the on state voltage drop$(V_{CE,SAT})$ is only slightly increased while the switching behavior is greatly improved if the low lifetime region is properly set. And these results are compared with IGBTs having uniform lifetime.