• Journal of Magnetics
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• v.16 no.3
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• pp.206-210
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• 2011

We optimize a vector network analyzer ferromagnetic resonance (VNA-FMR) measurement system to study spin dynamics and Gilbert damping parameters of thin ferromagnetic films. In order to obtain accurate damping parameters, careful determination of the susceptibility line-width is required. The measured S-parameters are converted into the corresponding susceptibility through a calibration processes. From the line-width measurements, we can successfully extract the saturation magnetizations and Gilbert damping parameters of 5-, 8-, and 10-nm thick $Ni_{81}Fe_{19}$ (Py) films.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.121-126
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• 2011

Spin dynamics of magnetic tunnel junctions with free and fixed reference layers is investigated by ferromagnetic resonance micromagnetic simulations. First, in magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer, a magnetization direction of each layer and the tunneling magnetoresistance are calculated for a DC magnetic field. To investigate the spin exciting modes in magnetic tunnel junctions, we simulate the ferromagnetic resonance frequency spectra with small RF magnetic fields. Exciting modes of the tunneling magnetoresistance calculated by an included angle between free and reference layers is interpreted from those of each layer. Spin exciting modes are different according to a signs of the DC magnetic field. In a negative magnetic field, FMR frequency spectra of free and reference layers are well elucidated by the modified Kittel's equation. However, in a positive magnetic field, there is no simple analytic solution related to FMR frequency spectra due to the coupled modes. Since ferromagnetic layers in magnetic tunnel junctions are interactive each other, careful considerations of the reference and fixed layer as well as the free layer are required for understanding on the spin dynamics of magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer.