• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.334.1-334.1
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• 2016

다른 재료에 비해 에너지 변환 효율의 관점에서 높은 경쟁력을 가진 결정질 실리콘은 지난 수십 년 동안 그 특성이 태양전지 분야에 널리 이용되어 왔다. 하지만 결정질 실리콘 웨이퍼는 일반적으로 제조 단계에서 많은 양의 에너지를 소비하고 절단 단계에서 절단 손실(Kerf-loss)이 발생된다. Epoxy Resin을 이용한 Kerf-less Wafering은 초박형 실리콘 웨이퍼 제조 기술 중 하나로, 비교적 간단한 장비와 공정을 통하여 절단 손실 없이 $50{\mu}m$이하의 초박형 실리콘 웨이퍼를 얻을 수 있는 기술이다. 실리콘과 Epoxy Resin 간의 열팽창 계수 차이를 이용하여 초박형 실리콘을 박리 시키는 기술로, 실리콘 기판 위에 Epoxy Resin으로 stress inducing layer를 올려 공정을 진행한다. stress inducing layer를 경화시키는 열처리가 끝나고 급냉되는 과정에서 stress inducing layer에 의해 실리콘 기판에 큰 응력이 가해지게 되고 실리콘 기판에 crack이 발생된다. 공정이 계속 됨에 따라 발생된 crack은 실리콘 표면과 평행한 방향으로 전파 되고 초박형 실리콘 layer가 실리콘 기판에서 박리 된다. 본 실험에서 중요한 공정 변수로는 stress inducing layer의 구성성분 및 두께, 열처리 온도 및 시간, cooling rate 등이 있다. 이러한 공정 변수들을 조절 하여 Epoxy Resin을 이용하여 $100{\mu}m$ 이하의 박리된 wafer를 얻을 수 있었다. 박리된 wafer의 단면과 두께를 Scanning Electron Microscopy(SEM)을 통해 관찰 하였고, 이를 통해 초박형 실리콘 박리 공정에 대한 연구를 진행하였다.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.11a
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• pp.128-132
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• 2006

Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355nm and 80MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow rate, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repetition rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20{\mu}m$ and $10{\mu}m$ at more than 500mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed of laser material process.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.11-15
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• 2007

Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355 nm and 80 MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using a laser with UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repletion rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20\;{\mu}m$ and $10\;{\mu}m$ at more than 500 mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed in laser material process.

• Journal of Welding and Joining
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• v.13 no.4
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• pp.113-121
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• 1995

This study deals with the quality and the optimum range of laser cutting process. Cold rolled steel sheets for automobile application were cut by a high power CO$_{2}$ laser system with beam quality of TEM$_{\infty}$ mode. Both process parameters such as travel speed and assist gas pressure, and quality factors were considered to optimize the laser cutting. It was revealed that the thinner the sheet thickness, the less effect of oxidation energy for contributing the cutting process. High speed photographs demonstrated that molten spot on the cut surface moved in a random and vigorous manner according to its viscosity and the flowing direction of assist gas, which resulted in so called striation. Laser cutting produced a very smooth surface of average roughness(Ra) about less than 1.5.mu.m at the optimum range. It was also shown that the characteristics of dross formation was influenced by the flowing durection of assist gas and the fluidity of molten metal drop..

• Ceramist
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• v.21 no.2
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• pp.75-82
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• 2018

In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1992.10a
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• pp.81-85
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• 1992

Quality of cut is strongly dependent on the cutting pressure, so this relationship can be identified by pressure measuring system. In this paper, the experiments presented were performed with the devised pressure measuring system and the laser cutting of STS 304. Convergent type and convergent-divergent type nozzle were used for pressure variation of the distance between nozzle and workpiece. In laser cutting of STS 304, 1.0 kW CO $\_$2/ laser used. The convergent type nozzle(1.0 mm diameter) pressured above 3 kgf/cm $\^$2/, the MSD(Mach Shock Disk) created, which caused the the pressure variations of the distance between nozzle and workpiece. The maximum cutting pressure exists in accordance with the variation of distance. In spite of far distance the maximum cutting pressure is achieved by using the pressure measuring system. The higher cutting pressure beneath the workpiece the less quantity of dross and the kerf width. Since the higher cutting pressure helps to remove the quantity of dross and to stop the exothermic energy into the material. The optimum laser cutting parameter of STS 304(2.0 mm thickness) with the convergent type nozzle(1.0 mm diameter)is 0.75 mm and 2.5 mm distance between nozzle and workpiece, 4 kgf/cm $\^$2/ cutting pressure. In 3.0 mm thickness case, 1.5 mm and 2.25 mm distance is achieved for good quality.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.309-313
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• 2002

In this paper, we have studied minimization of the kerf-width and surface burning, which occurred after the conventional singulation process of the multi-layer BGA board with copper, polyethylene and epoxy glass fiber. The high thermal energy of a pulsed Nd:YAG laser is used to cut the multi-layer board. The most considerable matter in the laser cutting of the multi-layer BGA boards is their different absorption coefficient to the laser beam and their different heat conductivity. The cut mechanism of a multi-layer BGA board using a 2$^{nd}$ harmonic Nd:YAG laser is the thermal vaporization by high temperature rise based on the Gaussian profile and copper melting point. In this experiment, we found that the sacrifice layer and Na blowing are effective in minimizing the surface burning by the reaction between oxygen in the air and the laser beam. In addition, N2 blowing reduces laser energy loss by debris and suppresses surface oxidation. Also, the beam incidence on the epoxy layer compared to polyimide was much more suitable to reduce damage to polyimide with copper wire for the multi layer BGA singulation. When the polyester double-sided tape is used as a sacrifice layer, surface carbonization becomes less. The SEM, non-contact 3D inspector and high-resolution microscope are used to measure cut line-width and surface morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.301-306
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• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.