• The Korean Journal of Physiology and Pharmacology
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• v.1 no.6
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• pp.613-624
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• 1997

Dorsal root ganglion (DRG) is composed of neuronal cell bodies of primary afferents with diverse functions. Various types of ion channels present on DRG neurons may reflect those functions. In the present study, voltage-gated potassium currents in DRG neurons of neonatal rats were characterized by whole-cell voltage clamp method. Two types of delayed rectifier and three types of transient potassium currents were identified according to their electrophysiological properties. The delayed rectifier currents were named $I_{Ke}$ (early inactivating) and $I_{K1}$ (late inactivating). Steady state inactivation of $I_{Ke}$ began from -100 mV lasting until -20 mV. $I_{K1}$ could be distinguished from $I_{Ke}$ by its inactivation voltage range, from -70 mV to +10 mV. Three transient currents were named $I_{Af}$ (fast inactivation), $I_{Ai}$ (intermediate inactivation kinetics), and $I_{As}$ (slow inactivation). $I_{Af}$ showed fast inactivation with time constant of $10.6{\pm}2.0$ msec, $I_{Ai}$ of $36.9{\pm}13.9$ msec, and $I_{As}$ of $60.6{\pm}2.9$ msec at +30 mV, respectively. They also had distinct steady state inactivation range of each. Each cell expressed diverse combination of potassium currents. The cells most frequently observed were those which expressed both $I_{K1}$ and $I_{Af}$, and they had large diameters. The cells expressing $I_{Ke}$ and expressing $I_{Ke}$, $I_{Ai}$, and $I_{As}$ usually had small diameters. Judging from cell diameter, capsaicin sensitivity or action potential duration, candidates for nociceptor were the cells expressing $I_{Ke}$, expressing $I_{Ke}$ and $I_{Ai}$, and expressing $I_{Ke}$ and $I_{As}$. The types and distribution of potassium currents in neonatal rat DRG were similar to those of adult rat DRG (Gold et al, 1996b).

• Journal of Radiation Protection and Research
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• v.11 no.1
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• pp.57-64
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• 1986

This paper described an improved technical method required for proper evaluation of personnel exposures by means of the photographic dosimeter developed by KAERI in lower gamma or X-ray energy regions, with which response of the dosimeter varies significantly. With calibration of the dosimeter in the energy range from 30 to 300 keV, the beam spectrum was carefully selected and specified it adequately. The absorber combinations and absorber thickness used to obtain the specified X-ray spectra from a constant potential X-ray machine were determined theoretically and also experimentally. A correlation between the density and exposure for the four separate energies, such as $49\;keV_{eff},\;154\;keV_{eff}\;250\;keV_{eff}\;and\;662\;keV$, is experimentally determined. As a result, it can be directly evaluated the exposure from the measured response of dosimeter.

• Journal of Radiation Protection and Research
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• v.23 no.1
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• pp.33-47
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• 1998

Using a combination of an X-ray generator Installed in radiation calibration laboratory of Korea Atomic Energy Research Institute (KAERI) and a series of 8 radiators and filters described in ISO-4037, monoenergetic fluorescent X-rays from 8.6 keV to 75 keV were produced. This fluorescent X-rays generated by primary X-rays from radiator were discriminated $K_{\beta}$ lines with the aid of filter material and the only $K_{\alpha}$ X-rays were analyzed with the high purity Ge detector and portable MCA. The air kerma rates were measured with the 35 co ionization chamber and compared with the calculational results, and the beam uniformity and the scattered effects of radiation fields were also measured. The beam purities were more than 90 % for the energy range of 8.6 keV to 75 keV and the air kerma rates were from 1.91 mGy/h (radiator : Au, filter : W) to 54.2 mGy (radiator : Mo, filter : Zr) at 43 cm from center of the radiator. The effective area of beam at the measurement point of air kerma rates was 12 cm ${\times}$ 12 cm and the influence of scattered radiation was less than 3 %. The fluorescent X-rays established in this study could be used for the determination of energy response of the radiation measurement devices and the personal dosemeters in low photon energy regions.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.341-349
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• 2000

CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• Journal of Radiation Protection and Research
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• v.17 no.2
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• pp.61-70
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• 1992

Photon, neutron and beta radiation fields were measured at PWR plants which are the representative types of nuclear power plant operated in Korea. The photon energy spectra were measured at locations in the auxiliary building during operation period and in the containment vessel(C/V) during shutdown period using a portable gamma spectrometer with a HPGe detector. The distribution of average energy was found to range from 440 to 780 keV in the C/V and from 280 keV to 760 keV in the auxiliary building, respectively. The average neutron energy measured at the five locations around the operation deck in the C/V in operation using a BMSS (Bonner Multi-Sphere Spectrometer) ranged from 20 keV to 210 keV. A computer code, BUNKI was used to unfold the spectrum. The beta energy spectra in the C/V and in the auxiliary building in annual outage were determined using 14 smear samples taken from the highly contaminated areas. The analysis showed that the representative corrosion product, $^{60}Co$ made main contribution to the beta energy field.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.359-367
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• 1999

CsI(Li) single crystals doped with 0.02, 0.1, 0.2 and 0.3 mole% lithium as an activator were grown by Czochralski method. The lattice structure of grown CsI(Li) single crystal was bcc, its lattice constant was $4.568\;{\AA}$. The absorption edge of CsI(Li) single crystal was 245 nm, and the spectral range of luminescence was $300{\sim}600\;nm$, its maximum luminescence intensity appeared at 425 nm. The energy resolutions of CsI(Li) single crystal doped with 0.2 mole% lithium were 14.5% for $^{137}Cs$(662 keV), 11.4% for $^{54}Mn$(835 keV) and 17.7% and 7.9% for $^{22}Na$(511 keV and 1275 keV), respectively. The relation formula of $\gamma$-ray energy versus energy resolution was ln (FWHM%) = -0.893lnE + 8.456 and energy calibration formula was ${\log}E_r=1.455\;{\log}(ch.)-1.277$. The phosphorescence decay time of CsI(Li) crystal doped with 0.2 mole% lithium was 0.51 s at room temperature, and its time resolution measured by CFT(constant-fraction timing method) was 9.0 ns.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.139-139
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.138-138
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• 1995

• Journal of the Korean Geotechnical Society
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• v.19 no.6
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• pp.169-179
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• 2003

Undrained shear strength of clay deposit is one of the most important properties in the design of geotechnical structures. The use of piezocone test is rapidly growing due to its merit that can measure the in-situ undrained shear strength continuously with less error. The reliability of the shear strength from piezocone test depends upon the cone factor applied. Many researchers have suggested different ranges of values for the factors. This study performs to find out the validity of the suggested values in Korea and their charateristics related to the mechanical properties of clay. Piezocone tests were performed at the site of pilot project of ground improvement at Yangsan-Mulgeum Gyeongnam to investigate the charateristics of piezocone factors. The piezocone fators$(N_{kt}, N_{ke}, N_{\Delta u})$ based on the undrained shear strength from quick triaxial compression test are generally within the suggested range. And there appears considerable relations between undrained shear strength and $(N_{kt}, N_{ke}, N_{\Delta u})$ and between preconsolidation pressure and $(N_{kt}, N_{ke})$, while plasticity index, rigidity index and friction ratio do not show any relations with cone factors. The results also reveal that factor $(N_{\Delta u})$ shows higher reliability than factors $(N_{kt} and N_{ke})$, which show smaller standard deviation, breadth of change and scattering.