• Title/Summary/Keyword: KRISS

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Bilateral comparison of the absorbed dose to water in high energy X-ray beams between the KRISS and the NMIJ

  • Kim, In Jung;Kim, Byoung Chul;Yi, Chul-Young;Shimizu, Morihito;Morishita, Yuichiro;Saito, Norio
    • Nuclear Engineering and Technology
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    • v.52 no.7
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    • pp.1511-1516
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    • 2020

  • The Korea Research Institute of Standards and Science (KRISS) established a new standard of the absorbed dose to water in LINAC X-ray beams. To confirm the equivalence of the new standard with other national metrology institutes (NMIs), a bilateral comparison study of the absorbed dose to water in high energy X-ray beams was performed between the KRISS and the National Metrology Institute of Japan (NMIJ). The comparison was made in-directly. Three transfer chambers were calibrated in the high energy X-ray beams by both laboratories and the calibration coefficients were compared. The average ratios of the calibration coefficients of the three transfer chambers obtained by the KRISS to those obtained by the NMIJ were 1.004, 1.006, 1.006, 1.007 for 6, 10, 15 and 18 MV X-ray beams, respectively. The calibration coefficients obtained at the KRISS were higher than those at the NMIJ but they were in good agreement within the expanded uncertainty of 1.0% (k = 2). The results of this study will be used as the evidence for the KRISS standard being comparable with those of other NMIs, temporarily, in the interim period up to finalizing a key comparison study, BIPM.RI(I)-K6 managed by the Consultative Committee for Ionizing Radiation.

  • https://doi.org/10.1016/j.net.2019.12.011 인용 PDF KSCI

SIMS Study on the Diffusion of Al in Si and Si QD Layer by Heat Treatment

  • Jang, Jong Shik;Kang, Hee Jae;Kim, An Soon;Baek, Hyun Jeong;Kim, Tae Woon;Hong, Songwoung;Kim, Kyung Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.188.1-188.1
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    • 2014

  • Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

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