• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.249-255
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• 2002

For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline $45^{\circ}$on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above $80^{\circ}C$, and V-groove shapes observed at below $80^{\circ}C$. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.65-71
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• 1999

The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.123-124
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• 2006

본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.117-122
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• 1999

This study investigated the corrosion rate of aluminum in alkaline solution. It was performed to observe the effects of alloy element, alkalinity (KOH concentration), solution temperature, and inhibitor and its concentration in the solution. Among species of aluminum, AA-1050 showed the lowest corrosion rate due to its high purity $(>199\%)$, whereas alloys containing Mg anuor Mn were highly corroded, relatively. The corrosion rate could be reduced over than $50\%$ by saturating the solution with ZnO, while ZnAc did not work as an inhibitor. The inhibition effect of ZnO increased with increasing the alkalinity and solution temperature. It was found that the corrosion rate linearly increased with the concentration of KOH in first order and exponentially decreased with the inverse of the solution temperature. An analysis of the corroded material covered the surface of aluminum was made by SEM and EDS. According to the analytical results by using XRD, it was confirmed that $Al(OH)_3$ was produced from the corrosion of aluminum in KOH solution.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.37-40
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• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.

• Polymer(Korea)
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• v.37 no.5
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• pp.592-599
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• 2013

In this study, polyacrylonitrile (PAN)-based porous carbon nanofibers were prepared from PAN polymer solution by electrospinning and KOH activation with various concentrations, and the characterization of pore structures and carbon dioxide adsorption was investigated. Manufactured PAN-based activated carbon nanofibers tend to decrease diameter and increase surface oxygen functional groups depending on the increasing concentration of KOH solution. In addition, according to the results of nitrogen adsorption for pore properties analysis, it indicated increase of the specific surface area in conformity with increasing concentration of KOH solution. Micropore volume of treated activated carbon nanofibers (ANCF) by 4 M KOH was the largest compared with other samples and mesopore volume of treated ANCF by 8 M KOH was the largest volume, respectively. The concentration of KOH effects textural and surface properties, as represented by BET and XPS, which enhance carbon dioxide adsorption capacity at 0 and $25^{\circ}C$.

• 한국전기화학회:학술대회논문집
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• 2001.10a
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• pp.46-46
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• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.329-334
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• 2002

The $CaTio_3$powder with perovskite structure was synthesized by mixing anatase $TiO_2$and $Ca(OH)_2$powders as starting materials, and KOH or NaOH as mineralizer, followed by hydrothermal method. The change of crystal structure, particle shape and size of the synthesized $CaTiO_3$powder was investigated with kind and concentration of mineralizer. It was found that the spherical particles of 0.7 $\mu$m were obtained when using 1N KOH and the hexahedrons particles of 3$\mu$m were obtained for the case of using 10 N KOH. With increasing KOH concentration, the particle shape was changed from sphere to hexahedrons and its size also increased. When using 1 N NaOH, the powder was consisted of 0.5~1 $\mu$m particle in size, whereas hexahedrons of 1~4 $\mu$m and whiskers more than 10$\mu$m in size was obtained for the 10 N NaOH solution. With increasing NaOH concentration, the particle shape was varied from hexahedrons to whiskers, showing the similar result with the KOH case. It was confirmed from EDS analysis that Na element, which was detected in hexahedrones was not contained in the whiskers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.223-229
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• 1994

$KTP(KTiOPO_4)$ single crystals have been hydrothermally grown in KOH solutions. Properties and Raman spectra of grown crystal were investigated. The most effective solvents for the crystal growth of KTP were KOH and KF solutions. In this study, the properties of KTP single crystals grown hydrothermally at $500^{\circ}C$ in 9 m KOH solution were measured. The following results were obtained : lattice parameters ; a=1.281 nm and c=1.058 nm, density ; $2.94 g/cm^3$, Vickers hardness ; $562kg/cm^2$, refractive indices ; $n_e=1.740$ and $n_e= 1.747.$ And Raman spectra of hydrothermal growth KTP single crystal have been investigated at room temperature under atmospheric pressure. As a result, the $A_1$ modes agree very well with KTP single crystal of high temperatures solution growth but the behavior of $B_2$ modes were slightly different.