• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.65-68
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• 1999

A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.35-36
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• 2000

The luminescence behaviors of Yttrium niobate and Bi doped Yttrium niobate were investigated under UV and low voltage electron excitations and interpreted with the first-principle calculations. In the UV excitation and emission spectra of $YNbO_4$ and $YNbO_4:Bi$, we were able to separate host contribution and Bi contribution and found that the shift in emission peak to longer wavelength is mainly due to Bi contribution. Using density functional theory, the cluster calculations were carried out for both $YNbO_4$ and $YNbO_4:Bi$. From the calculated density of states, we were also able to explain the charge transfer gap in the host and the effect of Bi in the excitation and emission spectra theoretically.

• Structural Engineering and Mechanics
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• v.64 no.1
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• pp.81-92
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• 2017

Many materials in engineering exhibit different modulus in tension and compression, which are known as bi-modulus materials. Based on the bi-modulus elastic theory, a modified semi-analytical model, by introducing a stress function, is established in this paper to study the mechanical response of a bi-modulus cylinder placed in an axisymmetric temperature field. Meanwhile, a numerical procedure to calculate the temperature stresses in bi-modulus structures is developed. It is proved that the bi-modulus solution can be degenerated to the classical same modulus solution, and is in great accordance with the solutions calculated by the semi-analytical model proposed by Kamiya (1977) and the numerical solutions calculated both by the procedure complied in this paper and by the finite element software ABAQUS, which demonstrates that the semi-analytical model and the numerical procedure are accurate and reliable. The result shows that the modified semi-analytical model simplifies the calculation process and improves the speed of computation. And the numerical procedure simplifies the modeling process and can be extended to study the stress field of bi-modulus structures with complex geometry and boundary conditions. Besides, the necessity to introduce the bi-modulus theory is discussed and some suggestions for the qualitative analysis and the quantitative calculation of such structure are proposed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.189-194
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• 2013

Single phase crystalline powders of $Mg_3Sb_2$ and $Mg_3Bi_2$ were prepared by mechanical alloying Mg, Sb and Bi metals with planetary ball milling for 24~48 h. The compositions of starting raw materials for single phase $Mg_3Sb_2$ and $Mg_3Bi_2$ were 3Mg : 1.8Sb and 3Mg : 1.6Bi, respectively. Two types of mechanically alloyed powders obtained were mixed at some ratios for the fabrication of $Mg_3Sb_2-Mg_3Bi_2$ composites and then hot pressed under uniaxial pressure of 70 MPa at 723 K for 1 h. The main phase of composites was a stable phase similar to $Mg_3Bi_2$ phase with a small amount of Bi phase. The distributions of Sb and Bi elements on EDS mapping images were discontinuous and their compositional contours were clear, which means that the hot pressed specimens were composites composed of two compounds of $Mg_3Sb_2$ and $Mg_3Bi_2$.

• Herbal Formula Science
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• v.22 no.1
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• pp.47-64
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• 2014

Objectives : Bi-jeung is a traditional oriental medical name. Bi-jeung is similar to rheumatoid arthritis(RA). This study was investigated to get the practical use of Bi-jeung prescriptions in Byunjeungrok. Methods: Original records related Bi-jeung in Byunjeungrok are interpreted and contemplated. Results: Bi-jeung prescriptions in Byunjeungrok are put stress on Byunjeung in conformity with entrails good energy enforcing as well as evil energy eliminating removing damp-evil among wind-evil cold-evil and damp-evil showing concrete prognosis. Conclusions: This study indicates that Bi-jeung prescriptions in Byunjeungrok have an influences for RA. It may also suggest that Bi-jeung prescriptions may expand therapy field for treatment of RA. and its complications.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.1-8
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• 2008

Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.49-54
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• 2010

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.37-42
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• 1996

The $Bi_{12}(Si,Ge)O_{20}$ single crystals were prepared by Czochralski method and the study of electrical and optical properties were carried out. The activation energy of the electrical conductivity was $E_g$=1.12 eV. The optical energy gap measured in the room temperature is found to be 2.3 eV. A.c. conductivity of crystal $Bi_{12}(Si,Ge)O_{20}$ was measured at temperatures from 290 K to 570 K in the frequency range from 50 kHz to 30 MHz. The a.c. conductivity is proportional to ${\omega}^s$. In view of this it should be hopping conduction mechanisms. At high frequencies, the power exponent was s=2. The low frequency dielectric constants were 54 for $Bi_{12}(Si,Ge)O_{20}$ and 41 for $Bi_{12}(Si,Ge)O_{20}$ single crystals.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.