• Title/Summary/Keyword: K-ToBI

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Effects of Bi on Mg2Si Modification and Mechanical Properties of Mg-Al-Si Alloy (Mg-Al-Si 합금에서 Mg2Si의 개량화 및 기계적 특성에 미치는 Bi의 영향)

  • Jun, Joong-Hwan
    • Journal of the Korean Society for Heat Treatment
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    • v.24 no.2
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    • pp.82-86
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    • 2011
  • The influences of Bi addition on morphological modification of $Mg_2Si$ phase and mechanical properties were investigated in Mg-7%Al-0.5%Si casting alloy. It was found that the addition of 0.3%Bi changed the $Mg_2Si$ morphology from coarse Chinese script type to polygonal type, and significantly decreased the size to ~5 ${\mu}m$ or less with the increase of number density. The modification of $Mg_2Si$ phase by the addition of Bi resulted in the improvement of tensile properties of the Mg-Al-Si alloy at RT and $175^{\circ}C$.

LOWER ORDER EIGENVALUES FOR THE BI-DRIFTING LAPLACIAN ON THE GAUSSIAN SHRINKING SOLITON

  • Zeng, Lingzhong
    • Journal of the Korean Mathematical Society
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    • v.57 no.6
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    • pp.1471-1484
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    • 2020
  • It may very well be difficult to prove an eigenvalue inequality of Payne-Pólya-Weinberger type for the bi-drifting Laplacian on the bounded domain of the general complete metric measure spaces. Even though we suppose that the differential operator is bi-harmonic on the standard Euclidean sphere, this problem still remains open. However, under certain condition, a general inequality for the eigenvalues of bi-drifting Laplacian is established in this paper, which enables us to prove an eigenvalue inequality of Ashbaugh-Cheng-Ichikawa-Mametsuka type (which is also called an eigenvalue inequality of Payne-Pólya-Weinberger type) for the eigenvalues with lower order of bi-drifting Laplacian on the Gaussian shrinking soliton.

Development of BiPbSrCaCuO Superconductor by Diffusion of Dual-Layer Sample (이중층 시료에서 확산에 의한 BiPbSrCaCuO 초전도체 개발)

  • 최성환;박성진;유현수;강형곤;한병성
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.5
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    • pp.795-801
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    • 1994
  • The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

WDM Transmission using Inline Dispersion Management of Bi-end Schemes in Optical Transmission Links (광전송 링크에서 bi-end 구조의 inline 분산 제어를 이용한 WDM 전송)

  • Lee, Seong-Real
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.10a
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    • pp.784-786
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    • 2010
  • Implementation possibility of inline dispersion management (DM) using bi-end schemes, which consist of one single mode fiber (SMF) and two dispersion compensating fiber (DCF) placed at front and rear of SMF, respectively, is investigated for compensating total dispersion accumulated in a span of WDM transmission links. It is confirmed that if net residual dispersion (NRD) is decided to be ${\pm}10\;ps/nm$ then bi-end scheme is effective to compensate for WDM channels with wide launching power range.

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THE BIDAS-2007: BIOASSAY DATA ANALYSIS SOFTWARE FOR EVALUATING A RADIONUCLIDE INTAKE AND DOSE

  • Lee, Jong-Il;Lee, Tae-Young;Kim, Bong-Whan;Kim, Jang-Lyul
    • Nuclear Engineering and Technology
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    • v.42 no.1
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    • pp.109-114
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    • 2010
  • Bioassay data analysis software (BiDAS-2007) has been developed by KAERI, which adds several new functions to its previous version. New functions of the BiDAS-2007 computer code enable the user not only to do a simultaneous analysis by using two or more types of bioassay for the best internal dose evaluation, but also to do a continual internal dose evaluation from a change of the internal exposure conditions such as an intake type (acute, chronic), an intake pathway (inhalation, ingestion), an absorption type (Type F, M, S), and a particle size (AMAD, activity median aerodynamic diameter), and also to estimate the intakes in various conditions of an internal exposure at a time. The values calculated by the BiDAS-2007 code are consistent and in good agreement with those values by IMIE-2004 code by Berkovski and IMBA code by Birchall. The BiDAS-2007 computer code is very useful and user-friendly to estimate the radionuclide intakes and committed effective doses of a radiation worker.

The Electrical De연세대학교 전기전자공학과gradation Rate of a Bi-2223 wires by the Various Transferred Current (수송전류에 따른 Bi-2223 선재의 전기적 열화)

  • Bae, Duck-Kweon;Lee, Sang-Jin;Bae, Joon-Han;Ko, Tae-Kuk;Park, Kyong-Yop
    • Proceedings of the KIEE Conference
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    • 2002.07b
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    • pp.831-834
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    • 2002
  • Several companies in the world are marketing superconducting wires, films and bulks. High-Tc superconducting systems using these superconductors are begun to commercialize. For the successful realization or commercialization of superconducting system used Bi-2223 wires, the database on the degradation of critical current is essentially needed. In this paper, the electrical degradation of a Bi-2223 wires is measured. The electrical degradation rate was measured after the certain time of continuous current transportation. Specimens have the length of 190cm and double-pancakes coil have the length of 10m were tested. Tested Bi-2223 wires are commercialized product has 115A of Ic. When the transportation current was 95% of Ie, the degradation of Ic was appeared after 5 hours of transportation time. When the transferred current is enough larger than Ic, Bi-2223 double pancake is damaged seriously.

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Can be the dielectric constant of thin films as-grown at room temperature higher than that of its bulk material?

  • Jung, Hyun-June;Kim, Chung-Soo;Lee, Jeong-Yong;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.23-23
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    • 2010
  • The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

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MOCVD of $Bi_2Te_3$-based thermoelectric materials and their material characteristics (MOCVD법으로 성장된 열전재료용 $Bi_2Te_3$ 박막의 특성)

  • Kim, Jeong-Hun;Jung, Yong-Chul;Suh, Sang-Hee;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.13-15
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    • 2005
  • The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

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Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method

  • Nam, Sung-Pill;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Journal of Electrical Engineering and Technology
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    • v.2 no.1
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    • pp.98-101
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    • 2007
  • Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.