• 한국산학기술학회논문지
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• 제12권1호
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• pp.233-247
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• 2011

최근 들어 고용 없는 성장 및 실업률이 높아지면서 기술을 기반으로 한 창업의 산실인 창업보육센터(Business Incubator : BI)가 주목을 받고 있다. 따라서 BI의 효율적인 운영과 성과측면에도 많은 연구들이 이루어져 왔다. 국내외 선행연구들은 주로 BI의 성공요소들(Critical Success Factors)이 성과에 미치는 영향, 또는 BI의 내부적인 운영 프로그램이나 지원서비스에 대하여 연구를 진행하여 왔다. 최근 BI 입주 시 지니고 있는 입주기업들의 잠재적인 역량이 성과에 영향을 미친다는 주장이 제기되고 있다. 따라서 본 연구는 이러한 문제들을 연구하기 위하여 첫째, BI별 입주업체 심사지표특성들이 성과에 미치는 영향을 분석하고, 둘째, 입주업체 심사지표특성이 BI의 업무역량 및 매니저의 역량등과 연계되어 성과에 미치는 조절효과를 분석하고자 하였다. 분석결과 CEO 역량 중 전문성은 사업화 성공률에 정(+)의 영향을 미치는 것으로 나타났다. 제품경쟁력과 시장성의 경우 사업화 성공률에 대하여 업무역량(운영강도)이 적용되었을 경우 정(+)의 조절효과를 나타내고 있다. 특히, 입주업체 CEO의 자금능력은 중요한 요소로서 사업화 성공률에 부(-)의 영향을 미치고 있으나 매니저의 역량을 통하여 정(+)의 조절효과를 시사하고 있다.

• 한국자기학회지
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• 제16권1호
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• pp.28-33
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• 2006

[ $Bi_{2/3}La_{1/3}FeO_3$ ]분말을 졸-겔법을 이용하여 제조하였다. 결정학적 및 자기적 성질을 열분석장치(TG-DTA), x-선 회절분석기(XRD), 주사전자현미경(SEM) 및 Mossbauer분광기를 이용하여 연구하였다. $Bi_{2/3}La_{1/3}FeO_3$ 단일상은 $600^{\circ}C$에서 3시간 동안 공기 중에서 열처리하여 얻을 수 있었으며, x-선 회절분석 결과 $Bi_{2/3}La_{1/3}FeO_3$ 분말은 rhombohedral 형태로 변형된 단순 perovskite 구조를 가졌으며 이때 격자상수 $=3.985\pm0.0005{\AA},\;\alpha=89.5^{circ}$이었다. Mossbauer스펙트럼 분석결과 $Bi_{2/3}La_{1/3}FeO_3$의 Neel온도는 $680\pm3K$임을 알 수 있었다. $Bi_{2/3}La_{1/3}FeO_3$의 이성질체이동 값은 0.27mm/s 값을 가졌으며, 이는 $Bi_{2/3}La_{1/3}FeO_3$.의 Fe 이온이 가지는 이온가는 $Fe^{3+}$의 high spin상태임을 보여주었다. $Bi_{2/3}La_{1/3}FeO_3$의 결정내의 Debye 온도는 $305\pm5K$ 평균 초미세 자기장 $H_{hf}(T)$는 $T/T_N<0.7$영역에서 $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.42(T/T_N)^{3/2}-0.13(T/T_N)^{5/2}$로 spin wave가 결정 내에서 잘 여기 됨을 알 수 있었다.

• 한국수소및신에너지학회논문집
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• 제5권1호
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• pp.41-49
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• 1994

Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.

• 대한전자공학회논문지
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• 제26권4호
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• pp.62-66
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• 1989

$Bi_2S_3$다결정과 $Bi_2S_3$ 무정형 박막은 증착방법에 의해서 성장되었다. 측정된 격자상수들은 기판온도 $210^{circ}C$에서 $a=1.708{\AA},\;b=3.943{\AA} 그리고 $c=3.943{\AA}$이었으며, orthorhombic 구조를 가진것으로 나타내었다. 다결정 박막 $Bi_2S_3$energy은 $289^{circ}C$ 에서 1.375eV로 측정되었다. 674nm의 중심에서는 변화된 광자흡수 구조로 생각되어졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.23-23
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• 2009

It has been challenging to increase the thermoelectric figure of merit ($ZT=S^2{\sigma}T/\kappa$) of materials, which determine the efficiency of thermoelectric devices, because the three parameters Seebeck coefficient (S), electrical conductivity ($\sigma$), and thermal conductivity ($\kappa$) of bulk materials are inter-dependent. With the development of nanotechnology, ZT values of nanostructured materials are predicted to be enhanced by classical size effects and quantum confinement effects. In particular, Bi nanowires were suggested as one of ideal thermoelectric materials due to the expected quantum confinement effects for the simultaneous increase in Sand. In this work, we have investigated the thermal conductivity of individual single crystalline Bi nanowires with d = 98 nm and d = 327 nm in the temperature range 40 - 300 K using MEMS devices. The for the Bi nanowire with d = 98 nm was observed to be ~ 1.6 W/m-K at 300 K, which is much lower than that of Bi bulk (8 W/m-K at 300 K). This indicates that the thermal conductivity of the Bi suppressed due to enhanced surface boundary scattering in one-dimensional structures. Our results suggest that Bi nanowires grown by stress-induced method can be used for high-efficiency thermoelectric devices.

• Journal of Power Electronics
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• 제15권5호
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• pp.1409-1420
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• 2015

In this paper, an algorithm using two bi-quad filters to suppress the wide-band resonance for PMSM servo systems is proposed. This algorithm is based on the double bi-quad filters structure, so it is named, "double bi-quad filter." The conventional single bi-quad filter method cannot suppress unexpected mechanical terms, which may lead to oscillations on the load side. A double bi-quad filter structure, which can cancel the effects of compliant coupling and suppress wide-band resonance, is realized by inserting a virtual filter after the motor speed output. In practical implementation, the proposed control structure is composed of two bi-quad filters on both the forward and feedback paths of the speed control loop. Both of them collectively complete the wide-band resonance suppression, and the filter on the feedback path can solve the oscillation on the load side. Meanwhile, with this approach, in certain cases, the servo system can be more robust than with the single bi-quad filter method. A step by step design procedure is provided for the proposed algorithm. Finally, its advantages are verified by theoretical analysis and experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Progress in Superconductivity
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• 제9권1호
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• pp.107-110
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• 2007

Bi/CNT composite and resin/CNT were chosen to improve the mechanical properties of $YBa_2Cu_3O_7$(YBCO) superconductor. In order to elucidate the effects of Bi/CNT composite and resin/CNT in YBCO superconductors, melt texture superconductor were impregnated by mixed compound of Bi and CNT into the artificial holes parallel to the c-axis, which were drilled on the YBCO superconductor. Various amount of Bi/CNT and resin/CNT were impregnated to YBCO superconductor with different holes diameters. Typical artificial holes diameters were 0.5, 0.7, and 1.0 mm respectively. Result of three-point bending test measurement, the bending strength with resin/CNT impregnation was improved up to 59.64 MPa as compared with 50.79 MPa of resin/CNT free bulk. Resin/CNT impregnation has been found to be one of the effective ways in improving the mechanical properties of bulk superconductor.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.