• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.235.2-235.2
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• 2014

Plasma hardly grows in low pressure because of lack of collision. Especially, in extremely low pressure like 1 mTorr, the experiment scale is far larger than mean free path therefore plasma is hardly generated in such low pressure. But low pressure plasma has useful properties like low damage or fine sputtering process because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily and cylindrical geometry is used to help discharge easily. And we changed magnetic field strength to control electron density or temperature. In low pressure, density and temperature behavior is very interesting so its characteristics are examined here.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• Journal of Korean Medicine Rehabilitation
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• v.23 no.2
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• pp.85-94
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• 2013

Objectives : This study aims to contribute to developing new pattern identification based on searches regarding pattern identification of low back pain, which is used in thesis both in Korea and China. Methods : First of all, we searched thesis concerning pattern identification of low back pain from RISS, OASIS, Korean traditional knowledge portal, CNKI. Results : 1. There were overall 34 thesis, consist of 18 Korean thesis(13 clinical papers and 5 analytical papers) and 9 Chinese thesis(7 clinical papers and 9 analytical papers). 2. 10 of 11 Korean thesis used more than 9 patterns for pattern identification, 9 of 14 Chinese thesis used less than 4 patterns for pattern identification of low back pain. 3. Patterns, which were repeatedly used in Korea, were 腎虛腰痛(Kidney deficiency low back pain), 濕熱腰痛(Dampness-heat low back pain), 寒濕腰痛(Cold-dampness low back pain), 痰飮腰痛(Phlegm-fluid retention low back pain), 風腰痛(Wind low back pain), 食積腰痛(Food accumulation low back pain), 濕腰痛(Dampness low back pain), 挫閃腰痛(Sprain low back pain), 瘀血腰痛(Static blood low back pain), 氣腰痛(Qi low back pain). 4. Patterns, which were repeatedly used in China, were 腎虛腰痛(Kidney deficiency low back pain), 濕熱腰痛(Dampness-heat low back pain), 寒濕腰痛(Cold-dampness low back pain), 氣滯血瘀腰痛(Blood stasis due to qi stagnation low back pain). Conclusions : Based on these results, it is considered that an advanced type of pattern identification of low back pain should be made or existing type needs to be practically and objectively improved.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

• Analytical Science and Technology
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• v.7 no.3
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• pp.253-260
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• 1994

Analytical characteristics of low power-low flow inductively coupled plasma-atomic emission spectometry(ICP-AES) has been studied. Although the net intensity of the low power ICP is lower than the moderate power ICP, the signal to background ratio becomes higher since the background intensity decreases with decreasing the RF power. The detection limit of the low power ICP is comparable with that of the moderate power ICP. The dynamic range of the calibration curve of the low power ICP is $10^4{\sim}10^5$. The ionization interferences by alkali metals increase with increasing the carrier gas flow rate, but the effects are not varied significantly with the RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.409-409
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• 2013

최근, 집적 소자의 미세화에 따라 늘어난 배선 신호 지연 및 상호 간섭, 그리고 소비 전력의 증가는 초고집적 소자 성능 개선에 한계를 가져온다. 이에 따라 기존의 알루미늄(Al)/실리콘 절연 산화막은 구리(Cu)/저유전율 박막(low-k)으로 대체되고 있고, 이는 소자 성능 개선에 큰 영향을 미친다. 그러나 Cu는 Si과 low-k 내부로 확산이 빠르게 일어나 소자의 비저항을 높이고, 누설 전류를 일으키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 이러한 Cu의 확산을 막기 위하여 Ta, TaN 등과 같은 확산방지막에 대한 연구가 활발히 진행되어 왔으나, 배선 공정의 집적화와 low-k 대체에 따른 공정 및 신뢰성 문제로 인해 새로운 확산방지막의 개발이 필요하게 되었다. 이를 위해, 본 연구에서는 Cu-V 합금을 사용하여 low-k 기판 위에 확산방지막을 자가 형성 시키는 공정에 대한 연구를 진행하였다. 다양한 low-k 기판에서 열처리조건에 따른 Cu-V 합금의 특성을 확인하기 위해 4-point probe를 통한 비저항 평가와 XRD (X-ray diffraction) 분석이 이뤄졌다. 또한, TEM (transmission electron microscope)을 이용하여 $300^{\circ}C$에서 1 시간 동안 열처리를 거쳐 자가형성된 V-based interlayer가 low-k와 Cu의 계면에서 균일하게 형성된 것을 확인하였다. 형성된 V-based interlayer의 barrier 특성을 평가하고자 Cu-V합금/low-k/Si 구조와 Cu/low-k/Si 구조의 leakage current를 비교 분석하였다. Cu/low-k/Si 구조는 비교적 낮은 온도에서 leakage current가 급격히 증가하는 양상을 보였으나, Cu-V 합금/low-k/Si 구조는 $550^{\circ}C$의 thermal stress 에서도 leakage current의 변화가 거의 없었다. 이러한 결과를 바탕으로 열처리를 통해 자가형성된 V-based interlayer의 Cu/low-k 간 확산방지막으로서 가능성을 검증하였다.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.133-137
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• 2011

Low-e glazing is classified as soft low-e glazing and hard low-e glazing. Hard low-e glazing can be temperable and its handling is comfortable because its coating film is a oxide film generated at high temperatures. But there is a fatal weakness that its insulation performance and shielding performance are lower compared to soft low-e glazing by low electrical conductivity of coating film. Soft low-e glazing is excellent because its coating film consists of Ag that is excellent electrical conductivity and it has strength that can supply various product consumers want. But soft low-e glazing has weaknesses that temperable and handling are difficult because Ag is oxidized easily. Therefore this study analyzes thermal performance of glazing by changing filling gas according to applying low-e glazing through simulation to judge performance before making sample. After this process, a comparative experimental study was done through TVS by making temperable low-e glazing.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.19-25
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• 2011

The size reduction of the semiconductor chip and the improvement of the electrical performance have been enabled through the introduction of the Cu/Low-K process in modern electronic industries. However, Cu/Low-K has a disadvantage of the physical properties that is weaker than materials used for existing semiconductor manufacture process. It causes many problems in chip manufacturing and package processes. Especially, the delamination between the Cu layer and the low-K dielectric layer is a main defect after the temperature cycles. Since the Cu/Low-K layer is located on the top of the pad of the flip chip, the stress on the flip chip affects the Cu/Low-K layer directly. Therefore, it is needed to improve the underfill process or materials. Especially, it becomes very important to select the underfill to decrease the stress at the flip-chip and to protect the solder bump. We have solved the delamination problem in a 90 nm Cu/Low-K flip-chip package after the temperature cycle by selecting an appropriate underfill.

• Journal of Environmental Science International
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• v.29 no.10
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• pp.989-996
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• 2020

This study was conducted to determine the effect of low temperature and low radiation conditions on the yield and quality of hot pepper at an early growth stage in Korea. In plastic greenhouses, low temperature, low temperature with covered shading treatments were set 17 to 42 days after transplanting. The pepper growing degree days decreased by 5.5% due to the low temperature during the treatment period. Radiation decreased by 74.7% due to the covered shading. After commencing treatments, pepper plant growth decreased with low temperature and low radiation. Analysis of the yield showed that the first harvest was delayed by low radiation. The cumulative yields of 119 days after transplanting were 1,956, 2,171, and 2,018 g/㎡ for control, low temperature, and low temperature with low radiation respectively. Capsaicin and dihydrocapsaicin concentrations in pepper fruit decreased with low temperature and low radiation. To investigate the photosynthetic characteristics according to the treatment, the carbon dioxide reaction curve was analyzed using the biochemical model of photosynthesis. Results showed that the maximum photosynthetic rate, V_cmax (maximum carboxylation rate), J (electric transportation rate), and TPU (triose phosphate utilization) decreased at low temperatures; the maximum photosynthetic rate, J, and g_m (dark respiration rate) were reduced by shading. These results indicate that low temperature and low radiation can retard early growth, yield, and quality, but these can also be recovered 119 days after planting. Based on the results, the yield and quality of pepper can recover from abiotic stresses with proper cultivation.

• Food Science of Animal Resources
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• v.34 no.4
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• pp.415-422
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• 2014

Duck feet gelatin (DFG) gel was added as a fat replacer to low-fat frankfurters and the effect of DFG on physicochemical, textural, and sensory characteristics of low-fat frankfurters was evaluated. DFG gel was prepared with a 20% duck feet gelatin concentration (w/w). Adding DFG decreased lightness and increased yellowness of the low-fat frankfurters (p<0.05). However, DFG did not affect redness of low-fat frankfurters (p>0.05). The statistical results indicated that adding DFG improved cooking yield of low-fat frankfurters (p<0.05). In addition, replacing pork back fat with DFG resulted in increased moisture content, protein content, and ash content of low-fat frankfurters, and the low-fat frankfurter formulated with 5% pork back fat and 15% DFG gel had the highest moisture content and lowest fat content (p<0.05). Adding of DFG increased all textural parameters including hardness, springiness, cohesiveness, chewiness, and gumminess of low-fat frankfurters (p<0.05). In terms of sensory properties, the low-fat frankfurter formulated with 5% pork back fat and 15% DFG gel showed similar satisfaction scores for the flavor, tenderness, juiciness, and overall acceptance when compared to the regular frankfurters (20% back fat). Therefore, our results suggest that DFG could be an effective novel source, as a fat replacer, for manufacturing of low-fat frankfurters.