• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• Journal of Environmental Science International
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• v.16 no.8
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• pp.907-912
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• 2007

Ion exchange resin was used to remove silica ion at ultralow concentration. The effects of temperature, type of ion exchange resin and single/mixed-resin systems on removal efficiency were estimated. As temperature increased, the slope of concentration profile became stiff, and the equilibrium concentration was higher. In the single resin system, the removal of silica was continued up to 400 min, but the silica concentration was recovered to initial concentration after 400 min due to the effect of dissolved $CO_2$. In the mixed-resin system it took about 600 min to reach equilibrium. Because of faster cation exchange reaction than anion exchange reaction, the effect of $CO_2$ could be removed. Based on the experimental results carried out in the mixed-resin system, the selectivity coefficients of silica ion for each ion exchange resin were calculated at some specific temperatures. The temperature dependency of the selectivity coefficient was expressed by the equation of Kraus-Raridon type.

• The Journal of Korean Medicine
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• v.24 no.4
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• pp.34-42
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• 2003

This study was designed to investigate the modulation of the Corydalis tuber on glycine-activated ion current in rat periaqueductal gray (PAG) neurons. Aqueous extract from Corydalis tuber has been widely used for pain control such as dysmenorrhea, irregular menstruation or amenorrhea with abdominal cramping, neuralgia, headache and gastrointestinal spasm. The PAG region of the brain is known to be involved heavily with nociception. Modulation of the Corydalis tuber on glycine-induced ion current in rat periaqueductal gray (PAG) neurons was studied by a nystatin-perforated patch-clamp technique. High concentrations of Corydalis tuber elicited ion current, which was suppressed by strychnine application. Low concentrations of Corydalis tuber reduced glycine-induced ion currents in the PAG neurons. Inhibitory action of Corydalis tuber on glycine-activated ion current was reduced by treatment with naltrexone, a non- selective opioid antagonist. Application of N-methylmalemide (NEM), a sulfhydryl alkylating agent, also reduced the inhibitory action of Corydalis tuber on glycine-activated ion current in the PAG neurons. These results suggest that the inhibitory effect of Corydalis tuber on glycine-activated ion current in the PAG neurons is one of the analgesic mechanisms of the Corydalis tuber, which may activate descending pain control system in PAG neurons.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.124-131
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• 2013

The most important thing in Plasma simulation is the etching process in which etch rate is calculated based on feature profile. Although there are various components to consider in calculating etch rate such as Ion Flux, Neutral, gas, and temperature, Addressing of this paper is limited to Ion Flux. This paper propose a scan method to compute Ion Flux faster for Plasma simulation. Also, this paper experiments and compares generally used Monte Carlo method and the proposed method based on gaussian and cosine distribution. Lastly, this paper proves that the proposed method can calculate accurate Ion Flux more efficiently than Monte Carlo method.

• Textile Coloration and Finishing
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• v.23 no.1
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• pp.51-59
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• 2011

Calcium alginate fiber were prepared by wet spinning of various conditions, including different concentrations of sodium alginate solution and $CaCl_2$ concentrations for coagulating the fiber through an absorption of calcium ion. The absorption of calcium ion during the coagulating step lead to solidify the fibers by the replacement of sodium ion with calcium ion to produce some crosslinking. The concentration of calcium ion in the calcium alginate fiber seems to be well related to the mechanical and physical property of the fiber, such as fiber strength moisture regain, and degree of swelling. The tensile strength of calcium alginate fiber was increased along with the increasing amount of sodium alginate solution. According to EDS analysis, 7 wt% $CaCl_2$ coagulation bath resulted in more calcium ion in the fiber compared to 3 wt% $CaCl_2$ coagulation bath. The decomposition temperature of calcium alginate fiber was $199^{\circ}C$, which $14^{\circ}C$ higher than that of sodium alginate.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.4
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• pp.229-234
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• 2005

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.262-268
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• 1999

Polycarbonate (PC) and Polymethylmethacrylate (PMMA) surface was modified by ion assisted reaction (IAR) technique to obtain the hydrophilic functional groups and improve the wettability. In conditions of ion assisted reaction, ion beam energy was changed from 500 to 1500eV, and ion dose and oxygen gas blown rate were fixed $1\times10^{16}$ ions/$\textrm{cm}^2$ and 4ml/min, respectively. Wetting angle of water on PC and PMMA surface modified by $Ar^+$ ion without blowing oxygen at 4ml/mon showed $5^{\circ}$ and $10^{\circ}$. Changes of wetting angle with oxygen gas and $Ar^+$ ion irradiation were explained by considering formation of hydrophilic group due to a reaction between irradiated polymer chain by energetic ion irradiation and blown oxygen gas. X-ray photoelectron spectroscopy analysis shows that hydrophilic groups such as -C-O, -(C=O)- and -(C=O)-O- are formed on the surface of polymer by chemical interaction. The polymer surface modification using ion assisted reaction only changed the surface physical properties and sept the bulk properties. In comparison with other modification methods, the surface modification by IAR treatment was chemically stable and enhanced the adhesion between metal and polymer surface. The applications of various kinds of polymer surface modification methods, metal and polymer surface. The applications of various kinds of polymer surface modification could be appled to the new materials about hydrophilic surface properties by IAR treatment. The adhesion between metal film and polymer measured by Scotch tape test whether the hydrophilic surfaces could improve the adhesion strength or not.