• Journal of the Korean Society for information Management
• /
• v.34 no.1
• /
• pp.177-195
• /
• 2017

This study attempts to infer research fronts using factor graph model based on heterogeneous features. The model suggested by this study infers research fronts having documents with the potential to be cited multiple times in the future. To this end, the documents are represented by bibliographic, network, and content features. Bibliographic features contain bibliographic information such as the number of authors, the number of institutions to which the authors belong, proceedings, the number of keywords the authors provide, funds, the number of references, the number of pages, and the journal impact factor. Network features include degree centrality, betweenness, and closeness among the document network. Content features include keywords from the title and abstract using keyphrase extraction techniques. The model learns these features of a publication and infers whether the document would be an RF using sum-product algorithm and junction tree algorithm on a factor graph. We experimentally demonstrate that when predicting RFs, the FG predicted more densely connected documents than those predicted by RFs constructed using a traditional bibliometric approach. Our results also indicate that FG-predicted documents exhibit stronger degrees of centrality and betweenness among RFs.

• Korean Journal of Applied Biomechanics
• /
• v.30 no.1
• /
• pp.103-109
• /
• 2020

Objective: The purpose of this study is to compare the muscle activity by electrode location in the biceps brachii during the arm curl isometric exercise and to provide the basic data needed to develop the proper electrode location of the biceps brachii based on the study results comparing the muscle activity by the angle of the elbow joint. Method: 17 adult males (Age: 21.50±4.63 yrs, height: 175.29±5.97 cm, weight: 63.79±15.31 kg, upper-arm length: 30.10±1.22 cm) participated in the study. In the arm curls isometric exercise, the experiment was divided into 1st and 2nd steps to compare muscle activity according to electrode location in the biceps brachii and muscle activity according to elbow angle change. In the first experiment, the surface electrode was attached at one-third point on the line from medial acromion to cubital fossa, according to the measurement method indicated by SENIAM. The elbow angle was set to 90°. In the second experiment, according to the proposed method of this study, the electrodes were separated at one finger's width in the left and right direction at one-third point on the line from medial acromion to cubital fossa, attached at the long head and short head. From the long head electrode, in about a width of two fingers in proximal direction, a total of three electrodes were attached at the myotendinal junction of the long head. The elbow angles were set as 70°, 90°, and 110°, and the isometric exercise (100% MVC) for 5 seconds was maintained with keeping the forearm and the rope to be 90° for the first and second experiments. Results: During the arm curl isometric exercise, there was no significant difference in SH and SENIAM proposition location proposed by this researcher. LH was shown to be lower than the muscle activity of the location proposed by SENIAM and there were significant (p<.01) differences. MJ appeared lower than the muscle activity of the location proposed by SENIAM and there were significant (p<.001) differences. The muscle activity by the elbow joint angle of SH in the biceps brachii was shown in large order of 70°<90°<110°, but there was no significant difference. The muscle activity by the elbow joint angle of LH was shown in large order of 90°<70°<110°, but there was no significant difference. The muscle activity by the elbow joint angle of MJ was shown in large order of 110°<90°<70°, but there was no significant difference. Conclusion: During the arm curl isometric exercise of the biceps brachii, it is judged appropriate to attach surface electrodes to the location proposed by SENIAM.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.2
• /
• pp.69-73
• /
• 2016

Recently, automotive engineers have paid much attention to waste heat recovery technology as a possible means to improve the thermal efficiency of an automotive engine. A large displacement gasoline engine is generally a V-type engine. It is not cost effective to install two superheaters at each exhaust manifold for the heat recovery purposes. A single superheater could be installed as close to the exhaust manifold as possible for the higher recovery efficiency; however, only half of exhaust gas can be used for heat recovery. On the contrary, the exhaust temperature is decreased for the case where the superheater is installed at a junction of two exhaust tail pipes. With the fact in mind, the optimum position of a single superheater was investigated using simulation models developed from a commercial software package (i.e. AMESim). It was found that installing the superheater near the exhaust manifold could recover 3.8 kW more from the engine exhaust despite utilizing only half of the exhaust mass flow. Based on this result, the optimum layout of an automotive waste heat recovery system was developed and proposed in this paper.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.2
• /
• pp.43-51
• /
• 2014

In 3-dimensional (3D) integrated package, thermal management is one of the critical issues due to the high heat flux generated by stacked multi-functional chips in miniature packages. In this study, we used numerical simulation method to analyze the thermal behaviors, and investigated the thermal issues of 3D package using TSV (through-silicon-via) technology for mobile application. The 3D integrated package consists of up to 8 TSV memory chips and one logic chip with a interposer which has regularly embedded TSVs. Thermal performances and characteristics of glass and silicon interposers were compared. Thermal characteristics of logic and memory chips are also investigated. The effects of numbers of the stacked chip, size of the interposer and TSV via on the thermal behavior of 3D package were investigated. Numerical analysis of the junction temperature, thermal resistance, and heat flux for 3D TSV package was performed under normal operating and high performance operation conditions, respectively. Based on the simulation results, we proposed an effective integration scheme of the memory and logic chips to minimize the temperature rise of the package. The results will be useful of design optimization and provide a thermal design guideline for reliable and high performance 3D TSV package.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.75-87
• /
• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

• Journal of Korea Multimedia Society
• /
• v.8 no.9
• /
• pp.1258-1268
• /
• 2005

While the concept of Home Network is laying by and its interests are increasing by means of digitalizing of the information communication infrastructure, many efforts are in progress toward convenient lives. Moreover, as information household appliances which have a junction of connecting to the network are appearing over the past a few years, the demands against intellectual Home Services are increasing. In this paper, by being based upon Multimedia which is an essential factor for developing of various application services on ubiquitous computing environments, we suggest a simplified application model that could apply the information to the automated processing system after studying user's behavior patterns using authentication and access control for identity certification of users. In addition, we compared captured video images in the fixed range by pixel unit through some time and checked disorder of them. And that made safe of user certification as adopting self-developed certification method which was used 'Hash' algorism through salt function of 12 byte. In order to show the usefulness of this proposed model, we did some testing by emulator for control of information after construction for Intellectual Multimedia Server, which ubiquitous network is available on as a scheme so as to check out developed applications. According to experimental results, it is very reasonable to believe that we could extend various multimedia applications in our daily lives.

• Korean Journal of Materials Research
• /
• v.20 no.12
• /
• pp.676-680
• /
• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of Physiology & Pathology in Korean Medicine
• /
• v.16 no.3
• /
• pp.452-457
• /
• 2002

Galla Rhois is a gallnut of Rhus javanica Linne used for treatment of diarrhea, hemorrhage, cough, leukorrhea and toxic tumor etc in oriental medicine. For the evaluation of antitumor effect of Galla Rhois, activity based fractionation was done. We isolated an effective compound and identified 1,2,3,4,6-penta-O-galloyl-β-D-glucose(PGG) by photometric analysis such as NMR and MASS. Then, we studied the angiogenic activity of PGG. It showed a cytotoxicity against SK-OV-3, SK-OV-3, HT1080 with IC/sub 50/ of 50 ug/ml approximately. It also effectively inhibited proliferation of HUVEC cells treated by bFGF to 30% of control at 20 ug/ml and cell migration to 80% at 10 ug in a dose dependent fashion. Tube formation of HUVEC cells on matrigel was effectively suppressed from 2.5 ug/ml of concentration by PGG. Moreover, it effectively recovered the dysfunction of gap junctional intercellular communication in WB-F344 rat liver epithelial cells caused by hydrogen peroxide at 4 ug/ml suggesting it potently can inhibit tumor promotion. Taken together, it indicates 1,2,3,4,6-penta-O-galloyl- β -D-glucose has antiangiogenic activity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.204-205
• /
• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.102-102
• /
• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).