• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.286-289
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• 2003

In the case of high voltage devices, junction termination plays an important role in determining the breakdown voltage of the device. The mesa junction termination has been demonstrated to yield nearly ideal breakdown voltage for 6H-SiC p-n junctions. However, such an approach may not be attractive because of the nonplanar surface, which is difficult to passivate. Moreover, In case of 4H-SiC, ideal breakdown voltage could not be achieved using mesa junction termination. For 4H-SiC planar junction termination technique is more useful one rather than mesa junction termination. In this paper, breakdown characteristics of the 4H-SiC device with planar junction termination, such as FLR(Field Limiting Ring), FP(Field Plate) and JTE(Junction Termination Extension), is presented. In the case of the FLR, breakdown voltage of 1800V is obtained. And breakdown voltage of 1000V and 1150V is also obtained for the case of FP and JTE case, respectively.

• Journal of IKEEE
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• v.19 no.4
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• pp.491-499
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• 2015

Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.