• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.2
• /
• pp.57-62
• /
• 2011

The energy conversion efficiency of DSSCs (Dye-Sensitized Solar Cells) is dependent on the powder size, the structure, and the morphology of $TiO_2$ electrode. The higher efficiency is obtained with high surface area of the nanoanatase-$TiO_2$ powder adsorbed onto a lot more of the dye. Also, the enhancement of light scattering increases the efficiency with high adsorption of the dye. Powder size, crystalline phase, and shape of $TiO_2$ obtained by hydrothermal method have 15-20 nm, anatase and round. $TiO_2$ electrode has fabricated with the mixture of scattering $TiO_2$ particle with 0.4 ${\mu}m$ in nano-sized powder. Conversion efficiency of series of DSSCs was measured with volume fraction of scattering particle. Photovoltaic characteristics of DSSCs with 10% scattering particles are 3.51 mA for Jsc (short circuit current), 0.79 V for Voc(open circuit potential), filling factor 0.619 and 6.86% for efficiency. Jsc was improved by 11% and enhancement of efficiency by 0.77% compared with that of no scattering particles. The confinement of inserted light by light scattering particles has more increase of the injection of exiton(electron-hole pair) and decrease of moving path in electron. Efficiencies of DSSCs with more than 10% for scattering particles have reduced with increasing the pore in the $TiO_2$ electrode.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.443-443
• /
• 2014

CIS 박막을 제조하기 위한 방법으로 셀렌화(selenization)방식, MOCVD방식, 동시진공증발(co-evaporation)방식, 전착(electrodeposition)방식 등이 있으나, 이러한 방식을 이용하여 CuInSe2 박막을 제조하는 경우 어떤 방법으로든 다원화합물의 조성 및 결정성을 조절하기가 매우 어려운 단점이 있었다. 기판의 온도를 일정 온도로 유지하도록 하고, 증발원을 가열하여 이에 내포된 물질(이원화합물 또는 단일원소)을 증발시켜 기판에 증착이 이루어지도록 하거나, 기판의 온도를 승온시키고 구리 이원화합물을 내포한 증발원을 가열해 물질을 증발시켜 기판에 증착이 이루어지도록 하는 방법으로 기판에 박막이 형성되도록 한다. 기판의 대면적화로 인해 균일한 박막의 형성이 어려워지고 있으며, 이중 15% 이상의 고효율을 보인 방법은 3-stage process를 이용한 동시진공증발방식으로, Cu, In, Ga, Se 등의 각 원소를 동시에 진공 증발시키면서 조성을 조절하여 태양전지에 적절한 전기적, 광학적 특성을 가지는 Cu(In,Ga)Se2 (CIGS)박막을 증착시키는 방법이다. 일반적으로, 실험실에서 연구되고 있는 장비의 구조는 증발원이 아래에 장착되어서 상향 증착되는 방식이다. 본 연구에서 사용된 장비는 하향 증발원이 측면에 장착되어서 하향 증착되는 방식으로 구성하였다. 증착되는 면방향으로, 적외선온도계(pyrometer)가 설치된 시창(viewport)의 오염 등으로 인하여, 지속적인 공정이 이루어지기 힘든 점을 개선하여 증착기판의 후면에 적외선 온도계를 설치하여 기판의 온도변화를 감지하여 공정에 반영할 수 있도록 하였다. 본 연구에서는 하향식 진공 증발원, 기판후면 온도모니터링모듈 등을 개발 장착하여, CIGS 박막을 제조하였으며, 버퍼층은 moving 스퍼터링법으로 ZnS를 증착하였고, 투명전극층은 PLD(Pulsed Laser Deposition)를 이용하여 제조하였다. 가장 높은 광변환효율을 보인 Al/ZnO/CdS/Mo/SLG박막시료는 유효면적 $0.45cm^2$에 광변환효율 15.65 %, Jsc : $33.59mA/cm^2$, Voc : 0.64 V, FF : 73.09 %를 얻을 수 있었으며, CdS를 ZnS로 대체한 Al/ZnO/ZnS/Mo/SLG박막시료는 유효면적 $0.45cm^2$에 광변환효율 12.45 %, Jsc : $33.62mA/cm^2$, Voc : 0.59 V, FF : 62.35 %를 얻을 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.2
• /
• pp.108-113
• /
• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• Journal of Korean Society of Environmental Engineers
• /
• v.33 no.11
• /
• pp.855-859
• /
• 2011

The main pollutants from zirconium alloy tubing manufacturing process in nuclear industry are nitrate ($NO_3-N$) and fluoride (F-)Nitric acid, and hydrofluoric acid is used for acid pickling. The process for the removal of nitrate and fluoride is composed of 1st chemical coagulation, SOD (Sulfur Oxidation Denitrification) process using sulfur-oxidizing denitrification, and 2nd chemical coagulation. The characteristic of the wastewater treatment is an application of SOD process. The SOD Process is highly received attention because it is significantly different from existing processes for sulfur denitrification. A JSC (JeonTech-Sulfur- Calcium) Pellet is unification of sulfur and alkalinity material. According to result of SOD process in wastewater treatment plant, the removal efficiency of T-N was over 91% and the average concentration of T-N from influent was 147.55 mg T-N/L and that from effluent was 12.72 mg T-N/L. Therefore, SOD process is a useful to remove nitrogen from inorganic industrial wastewater and a new development of microbial activator was shown to be stable for activation of autotrophic bacteria.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.97-97
• /
• 2013

Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1268-1274
• /
• 2018

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

• Journal of the Korean Geotechnical Society
• /
• v.37 no.8
• /
• pp.51-58
• /
• 2021

South Korea, as the 10th country to join the Artemis program led by NASA, is actively supporting various researches related to the lunar exploration. In particular, the utilization of water as a resource in the Moon has been focused since it was discovered that ice exists at the lunar pole as a form of frozen soil. Information on the thermal conductivity of lunar regolith can be used to estimate the existence for ice water extraction by thermal mining. In this study, the vacuum pressure effect on thermal conductivity of KLS-1 was investigated with a DTVC (Dusty Thermal Vacuum Chamber). The reliability of KLS-1 was reconfirmed through comparison with thermal conductivity of known standard lunar regolith simulants such as JSC-1A. An empirical equation to assess thermal conductivity considering dry unit weight and vacuum pressure was proposed. The results from this study can be implemented to simulate lunar cryogenic environment using the DTVC.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.42.1-42.1
• /
• 2010

결정질 실리콘 태양전지의 전면 전극은 전극 면적으로 인한 손실(shading loss)를 줄이고 단락전류밀도(Jsc)를 높이기 위해 전극 너비를 줄이는 노력을 하고 있다. 하지만 전극 소성(firing) 시 전면 전극의 핑거(finger)와 버스바(busbar)의 너비 차이로 인해 전극 침투(fire-through) 정도가 달라질 수 있다. 본 연구에서는 전극 소성 공정 시 전면 전극의 너비에 따른 전극 침투 정도를 조사하기 위해 접촉 저항(specific contact resistance)과 재결정화(Ag recrystallite) 된 전면전극의 분포에 대해 비교하였다. 접촉 저항을 측정하기 위하여 transfer length method(TLM)를 이용하였다. 또한 전면 전극층을 제거한 후 실리콘 기판의 재결정 분포를 주사전자현미경(Scanning electron microscope : SEM)을 이용하여 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.423-423
• /
• 2012

Recently, many researchers made progress in various studies improving the efficiency of dye-sensitized solar cell. In this paper, we used glass textured by wet-chemical etching process for improvement of photocurrent density in dye-sensitized solar cells. This is owing to increase coefficient of light utilization. Consequently, DSSC using the textured glass exhibit a Jsc of 9.49 mA/$cm^2$, a Voc of 0.73 V and a fill factor (FF) of 0.67 with an overall conversion efficiency of 4.64. This result showed increasing of 20% current density and 16% conversion efficiency using the textured glass. These results suggested that glass texturing was very effective in controlling the light-scattering properties into the photovoltaic cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.296-296
• /
• 2016

ITO films doped with a small amount of high-permittivity materials not only retain the basic properties of ITO films but also improve some of their properties. We report the highly conductive and transparent (ITO:Zr) films with various substrate (RT to 300oC) temperatures on glass substrate for the HIT solar cell applications. We observed a decrease in sheet resistance from 36 to $11.8{\Omega}/{\Box}$ with the increasing substrate temperature from RT to 300oC, respectively. The ITO:Zr films showed also lowest resistivity of $1.38{\times}10-4{\Omega}.cm$ and high mobility of 42.37cm-3, respectively. The surface and grain boundaries are improved with the increase of substrate temperature as shown by SEM and AFM surface morphologies. The highly conductive and transparent ITO:Zr films were employed as front electrode in HIT solar cell and the best performance of device was found to be Voc = 710 mV, Jsc = 33.70 mA/cm2, FF = 0.742, ${\eta}=17.76%$ at the substrate temperature of $200^{\circ}C$.