• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.88-94
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• 2015

This paper reports the fabrication of a lenticular liquid crystal (LC) lens array with thermally tunable focus and with the function of a convertible lens type, using the surface structure of a UV-curable polymer and a twisted-nematic (TN) LC cell. The TN LC cell makes the LC lenticular lens function as a converging or diverging lens by controlling electrically the polarization of input light. Therefore, the focal lengths for both the converging and diverging lenses, which can be switched from the TN cell, can be tuned by changing the effective refractive index of the LC by Joule heating of the transparent electrode. As a result, the focal length of the lens with the E7 LC was changed continuously from 8.7 to 31.2 mm for the converging lens type and from -9.8 to -14.2 mm for the diverging lens when the temperature was increased from 25 to $56^{\circ}C$.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.18-22
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• 2015

This paper deals with high-Tc superconducting (HTS) power charging system with GdBCO magnet, photo-voltaic (PV) controller, and solar panels to charge solar energy. When combining the HTS magnet and the solar energy charging system, additional power source is not required therefore it is possible to obtain high power efficiency. Since there is no resistance in superconducting magnet carrying DC transport current the energy losses caused by joule heating can be reduced. In this paper, the charging characteristics of HTS power charging system was simulated by using PSIM. The charging current of HTS superconducting power charging system is measured and compared with the simulation results. Using the simulation of HTS power charging system, it can be applied to the solar energy applications.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.234-237
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• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.496-499
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• 2012

Modified structure of copper pillar bump which has trapezoidal cross section on the top region is suggested with simulation results and concept of fabrication process. Due to the large surface area of joint region between bump and solder in suggested structure, electro-migration effect can be reduced. Reduction of electro-migration is related with current density and joule heating in bump and investigated with finite element methods with variation of dimensional parameters. Mechanical characteristics are also investigated with comparing modified copper pillar bump and conventional copper pillar bump.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.124-133
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• 1995

A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.210-215
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• 2008

This paper presents an experimental study on a bending actuator with a shape memory alloy wire. In this study, we introduced design process and experimental result of the bending actuator. The bending actuator consists of a SMA wire, springs, and a glass/epoxy strip. In the bending actuator, springs were used to restore the SMA wire to its initial shape right after actuation. To obtain properties of the SMA wire, DSC test was performed and the behavior of the SMA wire under different loadings was observed. Finally, the proposed bending actuator shows reasonable actuation behavior with relatively lower power consumption, fast response and effective efficiency.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.39-42
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• 2002

In this study, the computational heat transfer of the high-voltage vacuum circuit breaker was investigated. Higher normal current-ratings and stabilized thermal characteristics become more important in existing circuit breakers in order to satisfy market needs. Increases in current-ratings have an even greater effect on the Joule heating in the main circuit of the breakers. The thermal design must account for this increase in heat produced for the breaker to meet various temperature-rise limits set by industry standards. We are studying to enhance the normal current-ratings without major frame change of our present production models. As the method used in this research, we performed the computational analysis using the commercial Package, ICEPAK. We could get optimized thermal design suitable for 25% upgraded normal current-ratings through parametric study.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.96.1-96.1
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• 2017

This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.379-379
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• 2011

차세대 저항메모리(resistive switching random access memory; ReRAM)의 개발을 위해 다양한 산화 물질들의 저항 변화 특성이 연구되고 있다. 본 연구에서는 저항 변화 물질로 잘 알려진 ZnO 박막을 이용하여 저항 변화 특성을 평가하였다. ZnO 박막은 Pt/Ti/$SiO_2$/Si 기판 위에 스퍼터링 시스템을 이용하여 약 50 nm 두께로 증착되었다. 증착된 박막 위에 전극을 evaporator를 이용하여 패턴닝함으로써 전극-반도체-전극 구조의 소자를 만들고 이의 전기적 특성을 평가하였다. Compliance current를 설정하여 저항 변화 특성을 측정한 결과 가해진 전압의 극성에 관계 없이 저항이 변화하는, dielectric breakdown에 의해 박막내 전도성 필라멘트라 불리는 전도성 길이 생성되었다가 joule-heating에 의해 필라멘트가 파열되는, 전형적인 unipolar 저항 변화특성이 나타났다. 다기능성 소자 개발을 위해 위 소자 구조를 투명한 고분자 기판위에 형성하고 표면에 초발수성 ZnO 나노막대 구조를 합성하였다. 그 결과 투명하면서 유연하고, 수분에도 안정적인 다기능성 저항 변화 소자 특성을 평가할 수 있었다. 본 결과를 바탕으로 필라멘트 이론에 기초한 저항 변화 메커니즘을 설명하는 모델이 제시되었다.