• Title/Summary/Keyword: Joule-Heating

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Where is the coronal loop plasma located, within a flux rope or between flux ropes?

  • Lim, Daye;Choe, G.S.;Yi, Sibaek
    • The Bulletin of The Korean Astronomical Society
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    • v.40 no.1
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    • pp.66.3-67
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    • 2015
  • Without scrutinizing reflection, the plasma comprising a coronal loop is usually regarded to reside within a flux rope. This picture seems to have been adopted from laboratory plasma pinches, in which a plasma of high density and pressure is confined in the vicinity of the flux rope axis by magnetic tension and magnetic pressure of the concave inward magnetic field. Such a configuration, in which the plasma pressure gradient and the field line curvature vector are almost parallel, however, is known to be vulnerable to ballooning instabilities (to which belong interchange instabilities as a subset). In coronal loops, however, ideal MHD (magnetohydrodynamic) ballooning instabilities are impeded by a very small field line curvature and the line-tying condition. We, therefore, focus on non-ideal (resistive) effects in this study. The footpoints of coronal loops are constantly under random motions of convective scales, which twist individual loop strands quite randomly. The loop strands with the axial current of the same direction tend to coalesce by magnetic reconnection. In this reconnection process, the plasma in the loop system is redistributed in such a way that a smaller potential energy of the system is attained. We have performed numerical MHD simulations to investigate the plasma redistribution in coalescence of many small flux ropes. Our results clearly show that the redistributed plasma is more accumulated between flux ropes rather than near the magnetic axes of flux ropes. The Joule heating, however, creates a different temperature distribution than the density distribution. Our study may give a hint of which part of magnetic field we are looking to in an observation.

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The $10-{\mu}m$ Noth-Polar Bightening of Juptier: A Dynamical Phenomenon?

  • Kim, Sang Joon;Seo, Haingja
    • The Bulletin of The Korean Astronomical Society
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    • v.40 no.1
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    • pp.60.2-60.2
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    • 2015
  • Since its detection in 1980, the $8-{\mu}m$ north-polar brightening of $CH_4$ on Juptier has not moved from $180^{\circ}$ (SysIII) longitude. The $8-{\mu}m$ $CH_4$ brightening is mostly thermal and very similar to that of $13-{\mu}m$ $C_2H_2$ emissions, but the morphology of these hydrocarbon north-polar brightenings are very different from that of the $3-{\mu}m$ $H_3{^+}$ auroral oval suggesting a significantly different excitation process yet unknown heating mechanism. Recently, Kim et al. (submitted to Icarus, 2015) found that that the center of the $3-{\mu}m$ $CH_4$ northern bright spot is located at ${\sim}200^{\circ}$ (SysIII) longitude, which is ${\sim}20^{\circ}$ west from the center of the $8-{\mu}m$ north-polar bright spot, and it does not coincide with the $3-{\mu}m$ $H_3{^+}$ bright spot. They found significantly high temperatures (500 ~ 850K) from $CH_4$ rotational lines on the $3-{\mu}m$ bright spot above the $1-{\mu}bar$ pressure level, while we find cooler temperatures (<350K) over the the $8-{\mu}m$ spot. They also found that the upper states of the $3-{\mu}m$ $CH_4$ bands are mostly populated by non-thermal excitations, such as auroral particle precipitations and/or Joule heatings in contrast to the $8-{\mu}m$ thermal emission. This finding indicates that the $10-{\mu}m$ hydrocarbon brightening is confined to low altitudes below the $1-{\mu}bar$ level eliminating the long-suggested possibility of direct auroral bombardments while opening a new possibility of dynamical origin for the $10-{\mu}m$ brightening.

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Investigation of Turbulent Flow Effect in Segmented Arc Heater (아크히터 내부의 난류 효과에 대한 고찰)

  • Lee, Jeong-Il;Kim, Kyu-Hong;Kim, Chong-Am
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.5
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    • pp.1-8
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    • 2005
  • Flows in segmented arc-heaters have been calculated for prediction of experimental operating condition or for analysis and design of arc-heater itself. Some researchers succeeded in calculating accurately inner flows of a arc-heater, but could not made mathematical models which satisfy various operating conditions for many arc-heaters. this study is forced on turbulence for the generality of mathematical model. Instead of algebraic turbulence models which are frequently used for calculating inner flow of arc-heater, two equation turbulent models are used. Prediction results agree well with experiment data and it was confirmed that $k-\varepsilon$ two equation turbulence model is appropriate for a flow in an arc heater throughout extensive numerical testing.

Fusing Time Characteristics Analysis of Cable according to Temperature and Insulator (온도 및 절연체에 따른 케이블의 단선시간 특성 해석)

  • Kim, Ju-Hee;Kang, Sin-Dong;Kim, Jae-Ho
    • Journal of the Korean Society of Safety
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    • v.33 no.5
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    • pp.15-20
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    • 2018
  • This paper describes the fusing time characteristics of Light PVC Sheathed Circular Cord(VCTF) and Tray Frame Retardant(TFR) cables according to increased temperature under over current condition. The experimental equation will be used to determine the validity and reliability of the test results. The over current flowed 3, 5 and 10 times higher than the amount of allowable current using DC power supply with DAQ(Data Acquisition) measurement system. An infrared radiation heater, which was controlled by a variable AC auto transformer, was used to increase the temperature from room temperature to 50, 100 and 150 degrees Celsius. First, two type of cables were analyzed those with different cross-sectional areas with in the same structure and those with different structures with in the same cross-sectional areas. Then, it was determined how fusing time had been influenced according to the cross-sectional areas and different structures, respectively. The cable resistance was increased by joule heating according to increasing temperature. Therefore, the allowable current of cable is decreased. Finally, the fusing time of the cable was decreased due to increased temperatures at current flow, which were 3 times the amount of allowable current. The instantaneous breakdown was observed when current flow was 5 and 10 times over the amount of allowable current. The fusing time is directly affected by the structure of cable insulation.

3D Lithography using X-ray Exposure Devices Integrated with Electrostatic and Electrothermal Actuators

  • Lee, Kwang-Cheol;Lee, Seung S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.4
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    • pp.259-267
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    • 2002
  • We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

Conceptual design of cooling anchor for current lead on HTS field coils

  • Hyeon, C.J.;Kim, J.H.;Quach, H.L.;Chae, S.H.;Yoon, Y.S.;Lee, J.;Han, S.H.;Jeon, H.;Choi, Y.H.;Lee, H.G.;Kim, H.M.
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.2
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    • pp.38-43
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    • 2017
  • The role of current lead in high-temperature superconducting synchronous machine (HTSSM) is to function as a power supply by connecting the power supply unit at room temperature with the HTS field coils at cryogenic temperature. Such physical and electrical connection causes conduction and Joule-heating losses, which are major thermal losses of HTSSM rotors. To ensure definite stability and economic feasibility of HTS field coils, quickly and smoothly cooling down the current lead is a key design technology. Therefore, in this paper, we introduce a novel concept of a cooling anchor to enhance the cooling performance of a metal current lead. The technical concept of this technology is the simultaneously chilling and supporting the current lead. First, the structure of the current lead and cooling anchor were conceptually designed for field coils for a 1.5 MW-class HTSSM. Then, the effect of this installation on the thermal characteristics of HTS coils was investigated by 3D finite element analysis.

Electrical conduction phenomena of $C_{22}$--quinolium(TCNQ) langmuir-blodgett films under the high-electric field ($C_{22}$-quinolium(TCNQ) LB막의 고전게 전기전도 현상)

  • 신동명;김태완;홍언식;송일식;유덕선;강도열
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.138-144
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    • 1994
  • Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

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Etching Characteristics of $Ge_2Sb_2Te_5$ Using High-Density Helicon Plasma for the Nonvolatile Phase Change Memory Applications (헬리콘 플라즈마를 이용한 $Ge_2Sb_2Te_5(GST)$ 상변화 재료의 식각 특성 검토)

  • Yoon, Sung-Min;Lee, Nam-Yeal;Ryu, Sang-Ouk;Shln, Woong-Chul;Yu, Byoung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.203-206
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    • 2004
  • For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

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Fabrication of carbon nanotube emitters by filtration through a metal mesh

  • Choi, Ju-Sung;Lee, Han-Sung;Gwak, Jeung-Chun;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.150-150
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    • 2010
  • Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of $1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability.

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Failure Mechanism Analysis of SAW Device under RF High Power Stress (RF 고전력 스트레스에 의한 SAW Device의 고장메카니즘 분석)

  • Kim, Young-Goo;Kim, Tae-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.5
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    • pp.215-221
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    • 2014
  • In this paper, the improved power durability test system and method for an reliability analysis of SAW device is proposed and the failure mechanism through failure analysis is analyzed. As a result of the failure analysis using microscope, SEM and EDX, the failure mechanism of the SAW device is electromigration due to joule heating under high current density and high temperature condition. The electromigration makes voids and hillocks in the IDT electrode and the voids and hillocks can lead to short circuit and open circuit faults, respectively, increasing the insertion loss of an SAW filter. The accelerated life testing of the SAW filter for 450MHz CDMA application using the proposed power durability test system and method is carried out. $B_{10}$ lifetime of the SAW filter using Eyring model and Weibull distribution is estimated as about 98,500 hours.