• 제목/요약/키워드: Joining factors

검색결과 236건 처리시간 0.022초

GMAW 공정에서 아크 안정성의 실시간 측정 (Real-time estimation of arc stability in GMAW process)

  • 원윤재;부광석;조형석
    • Journal of Welding and Joining
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    • 제8권1호
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    • pp.31-42
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    • 1990
  • Arc must be stable during welding first of all other factors for obtaining sound weldment, especially in the automation of welding process. Arc stability is somewhat sophisticated phenomenon which is not clearly defined yet. In consumable electrode welding, the voltage and current variation due to metal transfer enables to assess arc stability. Recently, statistical analyses of the voltage and current waveform factors are performed to assess the degress of arc stability which is assessed and controlled by operator's own experience by now. But, considering the increasing need and the trend of automation of welding process, it is necessary to monitor arc stability in real-time. In this sutdy, the modified stability index composed of two voltage and current wvaeform factors (arc time and short circuit time) reduced from four factors (arc time, short circuit time, average arc current and average short circuit current) in Mita's index by the welding electrical circuit modeling is proposed and verified by experiments to be well estimating arc stability in the static sense. Also, the recursive calculation form estimating present arc stability in the dynamic sense is developed for real-time estimation. The results of applying the recursive index during welding show good estimation of arc stability in real-time. Therefore, the results of this study offers the mean for real-time control arc stability.

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$CO_2$ 용접의 단락이행 조건에서 스패터 발생과 파형인자와의 관계 (Relation between Spatter Generation and Waveform factor of $CO_2$ Welding in Short-Circuit Condition)

  • 김희진;강봉용;이강희;유중돈
    • Journal of Welding and Joining
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    • 제16권3호
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    • pp.95-101
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    • 1998
  • Waveforms of $CO_2$ gas shielded arc welding in short circuit transfer mode was studied with the waveform analysis program, which can calculate various waveform factors such as number of short circuit event, mean and standard deviation of short circuit time and arc time. The calculated values of these factors were correlated independently or in combination with the spatter generation rate to figure out the most reliable index for evaluating spatter generation and further for arc stability. As a result this study, it was confirmed that the spatter generation tends to decrease with the increase of short circuit frequency. Further to this, it was also found that as the short circuit frequency increases the short circuit event becomes more uniform resulting in the decrease of standard deviations ($\sigma$values) of short circuit time and arc time. This result demonstrated that these factors are strongly correlated with each other and thus any one of these factors can be used for the evaluation index. In the discussion, however, short circuit frequency was proposed for the most practical index in evaluating the arc stability of short circuit transfer mode since it is the one which could be monitored in-process condition without any complex caculation process.

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304 스테인리스강의 Plug 용접성에 관한 연구 (A Study on the Plug Weldability of 304 Stainless Steel)

  • 황종근;장경복;강성수
    • Journal of Welding and Joining
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    • 제16권1호
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    • pp.106-113
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    • 1998
  • In this study, the plug weldability of STS 304 was investigated. The parameters which influence plug weldability were pushing pressure of the plates, position of welding wire and composition of shielding gases. Among these factors, the composition of shielding gases and hole diameter of the upper plate were found to be the major factors influencing weld quality. To evaluate weldability, tensile shear strength of the plug welded specimen was measured and compared with tensile strength of butt welded specimen. Hardness was measured for both plug weld and butt weld. The microstructure of the weld metal and HAZ were also characterized.

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반도체 3차원 칩 적층을 위한 미세 범프 조이닝 기술 (Micro-bump Joining Technology for 3 Dimensional Chip Stacking)

  • 고영기;고용호;이창우
    • 한국정밀공학회지
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    • 제31권10호
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    • pp.865-871
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    • 2014
  • Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

Ku complex suppresses recombination in the absence of MRX activity during budding yeast meiosis

  • Yun, Hyeseon;Kim, Keunpil
    • BMB Reports
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    • 제52권10호
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    • pp.607-612
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    • 2019
  • During meiosis, programmed double-strand breaks (DSBs) are repaired via recombination pathways that are required for faithful chromosomal segregation and genetic diversity. In meiotic progression, the non-homologous end joining (NHEJ) pathway is suppressed and instead meiotic recombination initiated by nucleolytic resection of DSB ends is the major pathway employed. This requires diverse recombinase proteins and regulatory factors involved in the formation of crossovers (COs) and non-crossovers (NCOs). In mitosis, spontaneous DSBs occurring at the G1 phase are predominantly repaired via NHEJ, mediating the joining of DNA ends. The Ku complex binds to these DSB ends, inhibiting additional DSB resection and mediating end joining with Dnl4, Lif1, and Nej1, which join the Ku complex and DSB ends. Here, we report the role of the Ku complex in DSB repair using a physical analysis of recombination in Saccharomyces cerevisiae during meiosis. We found that the Ku complex is not essential for meiotic progression, DSB formation, joint molecule formation, or CO/NCO formation during normal meiosis. Surprisingly, in the absence of the Ku complex and functional Mre11-Rad50-Xrs2 (MRX) complex, a large portion of meiotic DSBs was repaired via the recombination pathway to form COs and NCOs. Our data suggested that Ku complex prevents meiotic recombination in the elimination of MRX activity.