• Journal of the Korean Chemical Society
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• 제47권2호
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• pp.121-126
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• 2003

Tris(2-cyclohexylaminoethyl)amine (L) was synthesized by the Schiff base condensation reaction of tris(2-aminoethyl)amine with cyclohexanone, followed by reduction. The thermodynamic characteristics, mole ratio and formation constant of [Zn(II)-L] complex were measured by the cyclic voltammetry and isothermal titration. In the case of Zn(II), well-defined cathodic and anodic peak were obtained at -1.02V and -0.48V vs Ag/AgCl , respectively. For the [Zn(II)-L] complex, both peaks were obtained at -1.19V and -0.45V vs Ag/AgCl, respectively. In addition, the peak height gradually increases as the scan rate increases, suggesting that the currents obtained were diffusion - controlled. The mole ratio and stability constant of the complex measured cyclic voltammerty were 1:1 and logK$_f$= 5.8, respectively. And the mole ratio and stability constant of the complexe calculated by isothermal titration method was 1:1 and logK =5.4, respectively. ${\Delta}$H, ${\Delta}$G and T${\Delta}$S for the complex formation were -53.0 kJ/mol, -31.1 kJ/mol, and -21.9 J/K at 25 ${\circ}$C, respectively.

• Proceedings of the KIEE Conference
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.157-160
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• 1990

A dot matrix type DC Plasma Display Panel was fabricated and it's characteristics was investigated. Paschen curve and I-V curve of various gas mixture was given. Optimal gas mixing ratio, pressure and operating point was determined. The priming effect was observed and discharge delay time was measured with varing applied voltage, priming current, priming distance, duty ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.136-140
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• 1992

The purpose of this research is to develop the lithium secondary battery. This paper describes the preparation, electrochemical properties of nontstoichiometric(NS)-$V_6O_{13}$ and characteristics of Li/$V_6O_{13}$ secondary battery. NS-$V_6O_{13}$ was prepared by thermal decomposition of $NH_4VO_3$ under Ar stream of 140ml/min~180ml/min flow rate. And then, this NS-$V_6O_{13}$ was used for cathode active material. Cathode sheet was prepared by compressing the composite of NS-$V_6O_{13}$, acetylene black(A.B) and teflon emulsion (T.E). Characteristics of the test cell are summarised as follows. Oxidation capacity of NS-$V_6O_{13}$ was about 20% less than its reduction capacity. A part of NS-$V_6O_{13}$ cathode active material showed irreversible reaction in early charge-discharge cycle. This phenomena seems to be caused by irreversible incoporation/discoporation of lithium cation to/from NS-$V_6O_{13}$ host. Discharge characteristics curve of Li/$V_6O_{13}$ cell showed 4 potential plateaus. Charge-discharge capacity was declined in the beginning of cycling and slowly increased in company with increasing of coulombic efficiency. Energy density per weight of $V_6O_{13}$ cathode material was as high as 522Wh/kg~765Wh/kg.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1214-1218
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• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1551-1554
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• 2005

The Titanium has many superior characteristics Which are specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant. this study performed turning operation of Ti-6Al-4V alloy using the TiAlN Coate Tool which treated PVD (Physical Vapor Deposition). Experimental works are also executed to measure cutting force, chip figuration and surface roughness for different cutting conditions. As a result of study. Tool wear was serious at over 100m/min of cutting speed and cutting condition was excellent at 1.0mm of cutting depth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.434-435
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Korean Journal of Crystallography
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• 제8권1호
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제21권1호
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• pp.79-84
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• 2008

We are developing a small-sized high temperature superconducting magnetic energy storage (HTS-SMES) magnet with the nominal storage capacity of 600 kJ, which provides electric power with high quality to sensitive electric loads. Critical current and N-value of a high temperature superconductor with large current, which was selected for the development of the 600 kJ HTS-SMES magnet, were investigated in various oblique external magnetic fields. Based on the critical current and N-value measured for the short sample conductor, we discussed the DC V - I characteristic of a model coil fabricated with the same conductor of 500 m. The results show that the measured critical current and N-value of the conductor for parallel field are constant in external magnetic fields less than about 0.2 T. However, for oblique fields, its critical current and N -value abruptly decrease in all external magnetic fields. Moreover, the measured critical current of the model coil well agrees with the numerically calculated one based on the DC V - I characteristic measured for the short sample conductor. This suggest that losses and critical currents for an HTS-SMES magnet made up of a high temperature superconductor with anisotropic characteristic are predictable from the data of a short sample conductor.