• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.134-138
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• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2033-2036
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• 1997

In this paper, we proposed a novel current-fed DC-DC converter with multi-output. It has two winding reactor in series with the input source of the converter. By using the 2nd winding recycling the energy stored in the reactor to the input, the double-outputs DC-DC converter can be created, which makes it a good choice for a multi-output power supply with more outputs and has savings in cost and space. The steady state and dynamic characteristics of the converter are analyzed in detail by using the state space averaging method. It is found that the maximum value of $V_{o2}$ exists in the 2nd output and also during the MOSFET off period, the energy stored in the magnetizing inductance is reset through auxiliary winding $N_3$, so the duty cycle is restricted to 50%. Theoretical and experimental results were taken from the converter rated at switching frequency 50kHz. input voltage 50V. output voltage 5V. 12V and output power 65W. As a result, both results were well consistent. Therefore, it is varified the validity of the proposed converter in this paper.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.62-65
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• 2003

We considered of the efficiency for the Buck+Half bridge converter This converter has advantages of applications for a low output voltage, a high output current and a wide input voltage. Developed the Buck converter ratings and the Half Bridge converter ratings are 36$\~$72V Input and 22V/5A output, 19$\~$24v input and 3.3V/30A output, respectively. Buck converter is operated with zero voltage switching process to reduce the switching losses. The 80.1 $\~$97.6$\%$ of the efficiency is measured at 18.4 $\mu$H output filter inductance of Buck convertor. In Half Bridge convertor, the 86$\~$96.4$\%$ of the efficiency is measured at 100kHz switching frequency with PQI core.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Structural Engineering and Mechanics
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• v.61 no.6
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• pp.701-709
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• 2017

Seismic dissipation devices can play a crucial role in mitigating earthquake damages, loss of life and post-event repair and downtime costs. This research investigates the use of ring springs with high-force-to-volume (HF2V) dissipaters to create damage-free, recentring connections and structures. HF2V devices are passive rate-dependent extrusion-based devices with high energy absorption characteristics. Ring springs are passive energy dissipation devices with high self-centring capability to reduce the residual displacements. Dynamic behaviour of a system with nonlinear structural stiffness and supplemental hybrid damping via HF2V devices and ring spring dampers is used to investigate the design space and potential. HF2V devices are modelled with design forces equal to 5% and 10% of seismic weight and ring springs are modelled with loading stiffness values of 20% and 40% of initial structural stiffness and respective unloading stiffness of 7% and 14% of structural stiffness (equivalent to 35% of their loading stiffness). Using a suite of 20 design level earthquake ground motions, nonlinear response spectra for 8 different configurations are generated. Results show up to 50% reduction in peak displacements and greater than 80% reduction in residual displacements of augmented structure compared to the baseline structure. These gains come at a cost of a significant rise in the base shear values up to 200% mainly as a result of the force contributed by the supplemental devices.

• Proceedings of the KIEE Conference
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• 2005.07d
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• pp.3114-3116
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• 2005

The AC-DC converter, which has three-phase AC power as input and isolated DC power as output is used for the regulated DC power supply of the telecommunication power processing system for several kilowatt class applications. The conventional DC power supply for the telecommunication power system comprises a PWM rectifier with sine-wave shaping input current unity power factor and a DC/DC converter connected to the PWM converter, which obtains DC 48[V]. Since power passes through these two power stage converters, the conversion power loss is difficult to provide high efficiency. To resolve these problems, this paper presents a new PWM rectified as a 1-stage power conversion method. It simulation and experimental results as proved from a practical point of view that 92.1[%] of conversion efficiency and input current which can meet harmonics regulation of the Class-A in IEC61000-3-3 are achieved.

• Progress in Superconductivity
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• v.6 no.1
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• pp.46-51
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• 2004

We fabricated a resistive type superconducting fault current limiter (SFCL) of 3-phase $6.6 kV_{rms}$ / rating, based on YBCO thin films grown on sapphire substrates with a diameter off inch. Each element of the SFCL was designed to have the rated voltage of $600 V_{rms}$ $/35A_{rms}$. The elements produced a single phase with 8${\times}$6 components connected in series and parallel. In addition, a NiCr shunt resistor of 23 $\Omega$ was connected in parallel to each of them for simultaneous quenches between the elements. Prior to investigating the performance of the 3 phase SFCL, we examined the quench characteristics for 8 elements connected in series. For all elements, simultaneous quenches and equal voltage distribution within 10% deviation from the average were obtained. Based on these results, performance of the SFCL for single line-to-ground faults was investigated. The SFCL successfully limited the fault current of $10 kA_{ rms}$ below 816 $A_{peak}$ within 0.12 msec right after the fault occurred. During the quench process, average temperature of all components did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• Proceedings of the KIEE Conference
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• summer
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• pp.518-520
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• 2004

In these days, there is a demand to develop fault current limiters(FCLs) to reduce excessive fault current and protect electrical equipments which are installed in the transmission and distribution power systems. We considered the resistive superconducting FCLs among the various kinds of FCLs. In this study, in order to develop the resistive superconducting FCL of 6.6kV 200A $3\phi$, we designed the new mask pattern for etching YBCO films by means of numerical analysis method, current limiting experiments and visualization of bubbles in films and investigated dielectric performance of the designed mask by using elecrtostatic numerical analysis method and breakdown experiments. We etched YBCO films by using the newly designed mask, connected the etched films in series and in parallel, and designed the 6.6kV resistive SFCL and then we observed the current limiting characteristics of the SFCL.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.3
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• pp.183-189
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• 2005

The effects of duplex-treatment of plasma carburization and CrN coating onto Ti-6Al-4V alloy on its creep properties were investigated by means of a constant stress creep tester. Applying duplex-treatment, specimens having an inner carburized layer of about $150{\mu}m$ in depth and outer CrN layer of about $7.5{\mu}m$ in thickness were prepared. The hardness of duplex-treatment surface was about 1,960 VHN. It also appeared that the duplex-treatment improved the roughness of the surface significantly; $Ra=0.045{\mu}m$ for treated alloy while $Ra=0.321{\mu}m$ for untreated alloy. The steady-state creep behaviors were investigated in a temperature range of $510{\sim}550^{\circ}C$ ($0.42{\sim}0.44T_m$) under an applied stress range of 200~275 MPa. The stress exponent, n, was derived assuming the power law creep behavior. The surface treatment showed a decrease in a value from 9.32 (untreated) to 8.79 (treated). Also the activation energy obtained from an Arrhenius plot increased from 238 to 257 kJ/mol.

• Progress in Superconductivity and Cryogenics
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• v.14 no.2
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• pp.20-23
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• 2012

With continuous development of the 2nd generation HTS conductor, the critical current of the conductor is also increasing. However, many applications require more than 2 conductors in parallel to transport large current. Applications such as HTS power cables and some HTS current leads usually need much larger transport current than that provided by a single conductor and they require more than several tens of HTS conductors. In the case of parallel connection of multiple HTS conductors, the current distribution depends on the contact resistance of each conductor at the terminals for DC operation. The non-uniform distribution of the terminal resistances results in a non-uniform distribution of the current. The resultant current non-uniformity affects on the measurement of the I-V curve and the thermal performance of the multiple conductors. This paper describes the I-V curves obtained from multiply connected HTS conductors with different terminal contact resistances to investigate the relationship between the distorted I-V curve and heat generation.