• Journal of Powder Materials
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• v.12 no.5 s.52
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• pp.325-331
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• 2005

Implant prototypes with various porosities were fabricated by electro-discharge-sintering of atomized spherical Ti-6Al-4V powders. Single pulse of 0.75 to 2.0 kJ/0.7 g-powder, using 150, 300, and $450{\mu}F$ capacitors was applied to produce a fully porous and porous surfaced implant compact. The solid core formed in the center of the compact after discharge was composed of acicular ${\alpha}+{\beta}$ grains and porous layer consisted of particles connected in three dimensions by necks. The solid core and neck sizes increased with an increase in input energy and capacitance. On the other hand, pore volume decreased with increased capacitance and input energy due to the formation of solid core. Capacitance and input energy are the only controllable discharge parameters even though the heat generated during a discharge is the unique parameter that determines the porosity of compact. It is known that electro-discharge-sintering of spherical Ti-6Al-4V powders can efficiently produce fully-porous and porous surfaced Ti-6Al-4V implants with various porosities in a short time less then 400 isec by manipulating the discharging condition such as input energy and capacitance including powder size.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.9
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• pp.1717-1723
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• 2007

In this study , quasi-MFISFET (Metal-Ferroelectric-Insulator-Semiconductor FET) devices are fabricated using PLZT(10/30/70), PLT(10), PZT(30/70) thin film and their drain current properties are investigated. It is found that the drain current of quasi-MFISFET is directly influenced by the polarization strength of ferroelectric thin fan. Also, when the gate voltages are ${\pm}5\;and\;{\pm}10V$, the memory windows are 0.5 and 1.3V, respectively. It means that the memory window is changed with the variation of coercive voltage generated by the voltage applied on ferroelectric thin film. The electric field and the leakage current with time delay of PLZT(10/30/70) thin lam are measured to investigate the retention property of MFISFET device. Some material parameters such as current density constant, $J_{ETO}$, electric field dependent factor K and time dependent factor m are obtained. The variation of charge density with time is quantitatively analyzed by using the material parameters.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.301-311
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• 2012

Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.397-398
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• 2009

In oder to investigate of partial discharge of nano-composites materials, we have studied partial discharge appling voltage from 5 to 30 [kV] to make an artificial defect with the epoxy adding to 0, 0.4, 0.8, and 1.6 [wt%], respectively. The experimental result, we have found that $SiO_2$ of 0.4 (wt%] was superior to others also, it is found that the effect of isolate diagnosis to get the slope for the discharged electric charge distribution.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.485-487
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• 2000

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matrix resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in out door use. In this paper, electrical properties of epoxy/$SiO_2$ composites were investigated at boiling absorption condition to observe that influence of moisture. The breakdown time of samples were measured under AC 6[kV] applied voltage, and the variation of lifetime was varified by using Weibull distribution function.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1371-1374
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• 1995

It is well known that the degradation of transformer oil conseqently lead to the failure of transformer. This paper discussed the characteristics of the degradation sensor checking transformer oil condition in live line. The degadation sensor is composed of base ring, electrodes and porous ceramic, passed through the transformer oil and checks the transformer oil condition through sensor's leakage current. So it is important to minimize the leakage current of base ring and connection parts. To investigate the leakage current of base ring and connection parts the characteristics of V-T-I and DC 2 KV and other examinations were performed. It is verified that ionized transformer oil caused by the expansion of temperature increases in the leakage current of porous ceramic sensor. It is certification that the leakage current of other parts of porous ceramic is very small(about 2%) compared with the porous ceramic body and it is confirmed that the leakage current in porous ceramic is changed sensitively according to the new oil(NO) and and the degradation oil(DO).

• Proceedings of the KIEE Conference
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• 2002.11b
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• pp.80-82
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• 2002

To solve the difficulty in obtaining transmission routes and substation sites. increase the transmission capacity between generation sites and load centers. and enhance the stability of the power system. we have constructed and operated the 765kV double circuit transmission line(hereunder T/L) from the Dangjin thermal power plant and the Uljin nuclear power plant to the metropolitan. It makes it possible for us to accumulate know-how of the 765kV system that is the highest operating system level in Asia. As the second 765kV project, we are going to construct the 765kV single circuit T/L between Ansung and Gap yung. Because of the different electrical and mechanical characteristics. we are in need of different design technology. This paper presents the optimal design of 765kV single circuit transmission line after due consideration about the arrangement of conductors. the shape of a tower, insulation, etc.