• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.405-406
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• 2016

A bidirectional secondary LLC resonant converter with auxiliary switches and an additional inductor is proposed to achieve the high gain characteristics of LLC resonant convertors. Auxiliary switches, an additional inductor and a resonant capacitor are connected in the high voltage secondary side of the proposed converter. The ac analysis and operating characteristics of bidirectional secondary LLC resonant converter are investigated. A 1kW prototype bidirectional secondary LLC resonant converter connected to the $400V_{DC}$ buses is designed and tested to confirm the validity and applicability of the proposed converter.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.114-116
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• 1994

Recently a superconducting fault current limiter(SFCL) has public attentions for the solution of large fault currents of power systems. Though a SFCL has more effective characteristics than the other current limiting devices, there are many problems to apply it to real power systems. For the analysis of transient fault characteristics of the SFCL, we designed and fabricated a inductive SFCL and tested it in 35V line. The superconducting cable of the SFCL was quenched at lower current(49A) than the designed critical current but it limited the fault current to the lower value(150A) than the one expected without SFCL(250A). And within one period the fault current decreased lower than normal laod current.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.54-58
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• 2006

Stirling cryocooler is relatively compact, reliable, commercially available. and uses helium as a working fluid. Over the past decade and a half, there has been rapid development of Stirling cryocooler, mainly for military and space applications. Stirling cryocoolers have been widely used lot the cooling of infrared sensors and high temperature superconducting filters to the temperature of the liquid nitrogen. The Stirling cryocooler with the rotary compressor is applicable to the cooling device for the compact mobile thermal imaging system, because the cryocoolers have the compact structure and light weight. In this paper, integral Stirling cryocooler is designed, manufactured and fabricated, and performance characteristics are investigated. This cooler delivers approximately 0.6W cooling at 80K for 20W of input power from 24V DC power supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.195-198
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• 1990

In order to investigate the radiation effects induced to electrical properties of Biaxially-Oriented Polypropylen film, several observations were carried out to the sample irradiated to various dose by $Co^{60}-{\gamma}$ ray, on the characteristics of TSC spectra measuered as a function of electric field applied to a sample of 15[ ${\mu}m$] thick. The TSC spectra observed in the temperature range of $153{\sim}403[K]$ with the electric field of intensity $10{\sim}60$ [MV/m], have shown two of the distinguished peak such as ${\beta}$, ${\alpha}$, each of which appeared at $-5{\sim}20$ [ $^{\circ}C$] and 90 [ $^{\circ}C$] respectively. As the conclusions, obtained from the studies, the origin of ${\alpha}$ peak in TSC seems to be attributed by thermal excitation of ions trapped with $0.4{\sim}0.8[eV]$ deep, at the defects formed by $Co^{60}-{\gamma}$ irradiation in a crystaline region. The origin of ${\beta}$ peak was regarded as the depolarization process of "OH" or "CO" dipole with the activation energy of $0.4{\sim}0.6[eV]$ in an amorphous region.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.101-105
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• 2023

Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.944-949
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• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.289-292
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• 2004

반도체 소자의 파괴 원인으로는 주로 열, 전압, 전류, 진동 및 압력 등이 있다. 이 중에서 전압과 열을 스트레스 인자로 적용하여 가속열화 시험을 진행하였다. 전압 및 열에 의한 소자의 열화정도를 파악하기 위해 현재 상용화되어 있는 Phase Control Thyristor 중 $V_{DRM}\;=\;1500V,\;V_{BRM}\;=\;1500V, \;T_{HS}\;=\;-40{\sim}125^{\circ}C$ 정도의 사양을 가지는 소자를 사용하였다. 열화에 의한 여러 가지 변동특성 중에서 소자의 순방향 및 역방향 항복특성의 변화와 누설전류의 변화에 대해 실험을 통해 알아보았다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.