• 전자공학회논문지 IE
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• v.43 no.2
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• pp.1-6
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• 2006

The white organic light emitting diode(OLED) with two-wavelength was fabricated using the DPVBi of blue emitting material and a series of orange colar fluorescent dye(Rubrene) by vaccum evaporation processes. The basic structure of OLED was ITO/TPD$(225{\AA})$/DPVBi/Rubrene/BCP$(210{\AA})/Alq_3(225{\AA})/Al(1000{\AA})$. We analyzed the fabricated device through the changes of the DPVBi and Rubrene layer's thickness. We obtained the white OLED with the CIE coordinate of the device was (0.29, 0.33) and luminescence of $1000cd/m^2$ at applied voltage of 15V when 4he thickness of DPVBi layer was 210${\AA}$ and the thickness of Rubrene layer was 180${\AA}$.

• 전자공학회논문지 IE
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• v.45 no.1
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• pp.1-6
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• 2008

In this paper, the white organic LED with two-wavelength was fabricated using the NPB of blue emitting material and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The structure of white OLED was ITO/NPB$(200{\AA})$NPB:Rubrene$(300{\AA})$/BCP$(100{\AA})/Alq_3(100{\AA})/Al(1000{\AA})$ and the doping concentration of Rubrene was 0.75 wt%. We obtained the white OLED with CIE color coordinates were x=0.3327 and y=0.3387, and the maximum EL wavelength of the fabricated white organic light-emitting device was 560 nm at applied voltage of 11 V, which was similar to NTSC white color with CIE color coordinates of x=0.3333 and y=0.3333. The turn-on voltage is 1 V, the light-emitting him-on voltage is 4 V. We were able to obtain an excellent maximum external quantum efficiency of 0.457 % at an applied voltage of 18.5 V and current density of $369mA/cm^2$.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.24 no.3
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• pp.263-271
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• 2014

Objectives: Along with the several cases of pulmonary disorders caused by exposure to indium that have been reported in Japan, China, and the United States, cases of Korean workers involved in processes that require handling of indium compounds with potential risk of exposure to indium compounds have also been reported. We performed biological monitoring for workers in various target manufacturing processes of indium, indium oxide, and indium tin oxide(ITO)/indium zinc oxide(IZO) in domestic factories. Materials: As biological exposure indices, we measured serum concentrations of indium using inductively coupled plasma mass spectrometry, and Krebs von den Lungen 6(KL-6) and surfactant protein D(SP-D) using enzyme-linked immunosorbent assays. We classified the ITO/IZO target manufacturing process into powdering, mixing, molding, sintering, polishing, bonding, and finishing. Results: The powdering process workers showed the highest serum indium level. The mixing and polishing process workers also showed high serum indium levels. In the powdering process, the mean indium serum concentration in the workers exceeded $3{\mu}g/L$, the reference value in Japan. Of the powdering, mixing, and polishing process workers, 83.3%, 50.0%, and 24.5%, respectively, had values exceeding the reference value in Japan. We suppose that the reason of the higher prevalence of high indium concentrations in powder processing workers was that most of the particles in the powdering process were respirable dust smaller than $10{\mu}m$. The mean KL-6 and SP-D concentrations were high in the powdering, mixing, and polishing process workers. Therefore, the workers in these processes who were at greater risk of exposure to indium powder were those who had higher serum levels of indium, as well as KL-6 and SP-D. We observed significant differences in serum indium, KL-6, and SP-D levels between the process groups. Conclusions: Five among the seven reported cases of "indium lung" in Japan involved polishing process workers. Polishing process workers in Korea also had high serum levels of indium, KL-6, and SP-D. The outcomes of this study can be used as essential bases for establishing biological monitoring measures for workers handling indium compounds, and for developing health-care guidelines and special medical surveillance in Korea.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.25-26
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• 2008

In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.632-635
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• 2000

In this paper we propose a controllable interrupt timer for haptic control system. haptic control system whihc was divided ito two processes as virtual environment(VE) manager and haptic controller. The VE manager displays the 3D graphic scene at low update rates 25Hz and haptic controller controls the haptic display at high update rates 1000Hz. To archive the accurate update rate we have imple-mented a timer so called "AaccTimer" based on Windows multimedia functions, The proposed "Acc Timer" for haptic control system has been imple- mented in a personal computer with a 6-DOF haptic interface. Experimental results show that our system is robust with respect to tolerances in the control rates and also through the accurate control rate the operator can always feel a stable force.feel a stable force.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.361-361
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• 2006

To clarify the structure development of cyclic olefin copolymers in stretching and relaxation processes, on-line measurements of optical retardation and tensile force were performed. Birefringence increased continuously whereas stress showed yielding at stretching temperatures of $160^{\circ}C$. At $170^{\circ}C$, stress yielding was not observed and stress and birefringence increased monotonously with an increase in the strain. In the relaxation process, stress and birefringence decreased monotonously at all the temperatures examined. The slope for the stress vs. birefringence relation at initial stage of stretching increased with an increase in temperature, whereas that for the relaxation stage was significantly larger that for the stretching process, and therefore showed a significant hysteresis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.883-886
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• 1997

In all Rapid Prototyping (RP) processes, a CAD solid model is sliced ito thin layers of uniform, but not necessarily constant, thickness in the building direction. Each cross-sectional layer is successively deposited and, at the same tim, bonded onto the previous layer; the stacked layers form a physical part of the model. The objective of this study is to develop a methode for calculating the rotational angle(θ/sub x/, θ/sub y/) of the linear hotwire cutting system in the three-dimensional space for the Variable Lamination Manufacturing process using expandable polystyrene foam sheet (VLM-S). In order to examine the applicability of the developed method to VLM-S, various three-dimensional shapes, such s a screw, an extruded cross, and a figure of Sonokong, were made using the data obtaiend from the method.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10b
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• pp.1284-1288
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• 1990

In this paper, we are going to study the stabilization of the semilinear heat equation with inhomogenous boundary conditions, whose solutions are not (in general) stable. Here, we use the discrete-time feedback inputs through the boundary of geometric domain to the semilinear system under some additional conditions and assumptions. It is shown that under these conditions, the stabilization can be realized by applying pole assignment argument to the principal linear part of the system and that the solutions exist globally in discrete-time t without any finite escape time.