• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.184-186
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• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• Toxicological Research
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• v.30 no.1
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• pp.55-63
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• 2014

Objectives: The use of indium compounds, especially those of small size, for the production of semiconductors, liquid-crystal panels, etc., has increased recently. However, the role of particle size or the chemical composition of indium compounds in their toxicity and distribution in the body has not been sufficiently investigated. Therefore, the aim of this study was to examine the effects of particle size and the chemical composition of indium compounds on their toxicity and distribution. Methods: Male Sprague-Dawley rats were exposed to two different-sized indium oxides (average particle sizes under 4,000 nm [IO_4000] and 100 nm [IO_100]) and one nano-sized indium-tin oxide (ITO; average particle size less than 50 nm) by inhalation for 6 hr daily, 5 days per week, for 4 weeks at approximately $1mg/m^3$ of indium by mass concentration. Results: We observed differences in lung weights and histopathological findings, differential cell counts, and cell damage indicators in the bronchoalveolar lavage fluid between the normal control group and IO- or ITO-exposed groups. However, only ITO affected respiratory functions in exposed rats. Overall, the toxicity of ITO was much higher than that of IOs; the toxicity of IO_4000 was higher than that of IO_100. A 4-week recovery period was not sufficient to alleviate the toxic effects of IO and ITO exposure. Inhaled indium was mainly deposited in the lungs. ITO in the lungs was removed more slowly than IOs; IO_4000 was removed faster than IO_100. IOs were not distributed to other organs (i.e., the brain, liver, and spleen), whereas ITO was. Concentrations of indium in the blood and organ tissues were higher at 4 weeks after exposure. Conclusions: The effect of particle size on the toxicity of indium compounds was not clear, whereas chemical composition clearly affected toxicity; ITO showed much higher toxicity than that of IO.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2276-2280
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• 2011

An indium-tin-oxide (ITO) is normally used as a substrate in organic photovoltaic cells. We examined the effects of an oxygen ($O_2$) plasma treatment on the electrical properties of an organic photovoltaic cell. Experiments with four-point probe method and atomic force microscope revealed the lowest surface resistance of 17.64 ${\Omega}$/sq and the lowest average surface roughness of 1.39 nm at the plasma treatment power of 250 W. A device structure of ITO/CuPc/$C_{60}$/BCP/$Cs_2CO_3$/Al was fabricated by thermal evaporation with and without the plasma treated ITO substrate. It was found that the power conversion efficiency of the cell with the plasma treated ITO is 65 % higher than the one without the plasma treated ITO.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.2 no.2
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• pp.185-193
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• 1999

Purpose: Proliferation of bile duct-like structures and fibrosis is a hepatic cellular reaction observed in most forms of human liver disease and in a variety of experimental conditions associated with liver injury. The aim of this study was to investigate the activation of Ito cells and bile duct proliferation in the rat after common bile duct ligation (CBDL). Methods: Hepatic morphological abnormalities were examined in rats whose bile ducts had been irreversibly ligated for 15, 21, 24 and 28 days. The liver was examined by immunohistochemical staining for ${\alpha}$-smooth muscle actin, the known marker of activated Ito cells, and light and electron microscopes. Results: After CBDL, the bile canalicular proliferation and interstitial fibrosis were gradually increased in the periportal areas extended to hepatic sinusoids. Ito cells positive for ${\alpha}$-smooth muscle actin were frequently observed in the periductular space and in perisinusoidal space of Disse. Ito cells and myofibroblasts were gradually increased in the interstitial fibrosis until the 28th day after CBDL. Ito cells and myofibroblasts had microfilaments with dense body at the periphery of the cell. Conclusions: Our results suggest that Ito cells may be fibroblastic or myogenic. It has also been postulated that during the development of hepatic fibrosis, Ito cells become myofibroblasts or fibroblast like cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.196-196
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• 2013

가시광 영역에서의 높은 투과도와 낮은 전기 비저항을 갖는 ITO (Indium Tin Oxide) 박막은 현재 Display, Solar Cell, LED, Smart Phone 등 최첨단 IT산업에서 가장 많이 사용되고 있는 투명전극소재이다. IBD (Ion Beam Deposition)방법은 박막의 증착 방법 중 Plasma에서 독립적으로 이온만을 빔의 형태로 조사하여 박막을 증착하는 방법으로 기존 RF 또는 DC 스퍼터방법에 비해서 상대적으로 높은 진공도(low 10E-04 torr)와 비교적 높은 스퍼터 된 입자의 에너지를 가지는 등의 장점으로 증착 된 박막의 밀도, 거칠기가 향상되고 상대적으로 적은 결함을 가지는 박막의 제작에 사용되고 있는 기술이다. (주)인포비온에서는 IBD 기술과 더불어 표면만을 선택적으로 가열할 수 있는 EBA Technology를 사용하여 박막에 Energy를 전달하고, 이를 바탕으로 ITO 박막의 전기적, 광학적, 구조적인 특성의 변화를 관찰 연구했다 [1]. 본 연구에서는 기존의 Sputter 방법과 IBD 방법으로 증착 된 ITO 박막의 전기적, 광학적, 구조적인 특성 변화를 비교 관찰하였고, EBA 후처리로 ITO 박막을 상온에서 처리하여, 박막의 투과도, 면 저항, 미세구조의 변화를 관찰하였다. 각 특성의 변화는 UV-VIS, 4Point-Probe, TEM을 사용하여 분석하였고, 처리 전, 후의 박막의 결합에너지는 XPS로, 박막의 조성변화는 SIMS를 이용하여 각각 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.99-99
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• 1999

투명전도막인 Ito(Indium Tin Oxide)는 flat panel display 와 solar cell 같은 optoelectronic 이나 microelectronic device에서 널리 이용되어 지고 있다. 현재 상용화되고 있는 거의 대부분의 ITO 박막은 sputtering법에 의해 제조되고 있으나 공정상의 이유로 15$0^{\circ}C$이상의 기판온도가 요구되어진다. 그런, 실제 display device 제조공정에서는 비정질 실리콘 박막이나 유기막 위에 ITO박막을 제작할 필요성이 증대되어 지고 있고, 또한 다른 전자소자에 있어서도 상온 ITO 박막 형성 공정에 대한 필요성이 증대되고 있다. 이러한 이유로 본 실험에서는 IBAE(Ion Beam Assisted Evsporation)을 이용하여 저온 ITO박막을 유기막 위에 증착하는 공정에 대한 연구를 수행하였다. 이렇게 증착된 ITO 박막의 결정성은 비정질이었다. 또한, 모든 display device 제작에는 식각공정이 필수인데 기존에 사용되고 있는 wet etching 법은 등방성 식각특성 때문에 미세 pattern 형성에 부적합？, 따라서 비등방성 식각에 용이한 plasma etching법을 사용하여 저온 증착된 ITO 박막의 식각특성을 알아보았다. 실험에 사용된 식각장비는 자장 강화된 유도결합형 플라즈마 식각장비(MEICP)를 사용하였으며, 13.56MHz의 RF power를 사용하였다. 식각조건으로 source power는 600W~1000W, 기판 bias boltage는 -100V~-250V를 가하였으며, Ar, CH4, O2, H2, BCl3의 식각 gases, 5mTorr~30mTorr의 working pressure 변화 그리고 기판 온도에 따른 식각특성을 관찰하였다. ITO 가 증착된 기판으로는 유기물 중 투명전도성 박막에 기판으로서 사용가능성이 클 것으로 기대되어지는 PET(polyethylene-terephtalate), PC(polycarbonate), 아크릴을 사용하여 기판 변화가 식각특성에 미치는 영향에 대해서 각각 관찰하였다. 식각속도의 측정은 stylus profiler를 이용하여 측정하였으며 식각후에 표면상태는 scanning electron spectroscopy(SEM)을 이용하여 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.301-301
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• 2010

In order to enhance the efficiency of the organic solar cells, the effects of plasma surface treatment with using $CF_4$ and $O_2$ gas on the anode ITO were studied. The polymer solar cell devices were fabricated on ITO glasses an active layer of P3HT (poly-3-hexylthiophene) and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) mixture, without anode buffer layer, such as PEDOT:PSS layer. The metallic electrode was formed by thermally evaporated Al. Before the coating of organic layers, ITO surface was exposed to plasma made of $CF_4$ and $O_2$ gas, with/without heat treatment. In order to identify the effect the surface treatment, the current density and voltage characteristics were measured by solar simulator and the chemical composition of plasma treated ITO surface was analyzed by using X-ray photoelectron spectroscopy(XPS). In addition, the work function of the plasma treated ITO surface was measured by using ultraviolet photoelectron spectroscopy(UPS). The effects of plasma surface treatment can be attributed to the removal organic contaminants of the ITO surface, to the improvement of contact between ITO and buffer layer, and to the increase of work function of the ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.373-373
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• 2011

$Cu(In,Ga)Se_2$(CIGS) 박막 태양전지는 Chalcopyrite계 박막 태양전지로 Cu, In, Ga, Se 각 원소의 조성을 적절히 조절하여 박막을 성장시킨다. 성장시킨 CIGS 박막은 광흡수계수가 105cm-1로 다른 물질 보다 뛰어나고 직접 천이형 반도체로서 얇은 두께로도 고효율의 박막 제작이 가능하다. 얇은 두께로도 충분히 빛의 흡수가 가능하지만, cell 표면 반사에 의한 광 손실은 cell 효율을 떨어뜨리게 된다. 본 연구에서는 CIGS 박막 태양전지의 광 흡수 향상을 위해 굴절률이 1.86인 ITO 위에 ITO보다 굴절률이 작은 $MgF_2$ (n=1.377) [1]를 80, 100, 120, 140 nm로 증착하여 $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/SLG 시료를 제작하고, optical reflectance, Quantum Efficiency를 이용하여 분석하였다. optical reflectance 분석 결과, $MgF_2$ AR coating을 한 경우, 두께가 두꺼워짐에 따라 광 반사도가 감소하는 경향을 보였다. 또한 AR coating 두께가 커짐에 따라 fluctuation이 점점 커지며, 파형이 장파장 쪽으로 shift하는 것을 관찰 할 수 있었다. Quantum efficiency (QE)를 분석한 결과 $MgF_2$ AR coating 할 경우, 측정된 대부분의 파장에서 QE가 향상되는 것을 확인할 수 있었다. 하지만 AR coating 두께에 따른 변화는 뚜렷한 차이를 보이지 않았다. AR coating 결과, JSC가 증가하여 efficiency가 향상되는 것을 확인 할 수 있다. 그러나 $MgF_2$ AR coating 80~140 nm 범위에서 cell 효율 변화의 뚜렷한 차이는 관찰할 수 없었다.