• Title/Summary/Keyword: Ito cell

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Enhanced flexoelectric switching made from self-assembly of smectic liquid crystal and triallyl dopant

  • Lim, Tong-Kun;Lee, Ji-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.175-177
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    • 2006
  • Here we report an enhanced flexoelectric switching in a self-assembled system of smectic liquid crystal and some specific dopant. The assembled unit block seemed to have electric dipole and as a result induces large flexoelectric polarization due to its asymmetric shape and shows fast switching to the electric field. The unit blocks are oriented in a helical fashion in the cell with large gap (${\sim}5{\mu}m$) and shows selective reflection property. In the thin cell (${\sim}2{\mu}m$), the unit blocks are aligned homeotropically on the bare ITO substrate with no surface treatment and shows fast decaying time.

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A Study of Cu-doped CdS thin film by E-beam (E-beam 제작된 Cu-doped CdS 박막에 관한 연구)

  • Kim, Seong-Ku;Park, Gye-Choon;Jo, Jae-Cheol;Jung, Woon-Jo;Rye, Yong-Tek
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.67-72
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    • 1992
  • In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

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Preparation and Photovoltaic Properties of the CdTe and CdS-CdTe heterojunction (CdTe와 CdS-CdTe 이종접합 제작과 그 광전특성)

  • Kim, Seong-Ku;Park, Gye-Choon;Lee, Jean
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.49-54
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    • 1992
  • Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

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Single Color Realization and Driving Method of Three-Electrode Type Reflective Display (3전극형 반사형 디스플레이의 단일컬러 구현 및 구동방법)

  • Lee, Sang-Il;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.2
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    • pp.109-114
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    • 2015
  • We realize a color reflective display without any color filter and sub-pixelation concept, by which the full or single color realization is basically impossible. In this study, we use a 3-electrode on the lower substrate with indium tin oxide (ITO) glass. The width of a rib is $30{\mu}m$, a cell size is $150{\mu}m{\times}150{\mu}m$, and the space of lower electrodes is $10{\mu}m$. To get the single color, we drive this panel by a identical algorithm based on the movement of charged particle in color fluid within a cell with hermetic seal. According to the driving method, the lifetime of panel is different.

Current Status of Low-temperature TCO Electrode for Solar-cell Application: A Short Review (고효율 태양전지 적용을 위한 저온 투명전극 소재 연구현황 리뷰)

  • Park, Hyeongsik;Kim, Youngkuk;Oh, Donghyun;Pham, Duy Phong;Song, Jaechun;Yi, Junsin
    • New & Renewable Energy
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    • v.17 no.1
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    • pp.1-6
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    • 2021
  • Transparent conducting oxide (TCO) films have been widely used in optoelectronic devices, such as OLEDs, TFTs, and solar cells. However, thin films of indium tin oxide (ITO) have few disadvantages pertaining to process parameters such as substrate temperature and sputtering power. In this study, we investigated the requirements for using TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films such as indium zinc oxide and Zr-doped indium oxide.

The Post Annealing Effect of Organic Thin Film Solar Cells with P3HT:PCBM Active Layer (P3HT:PCBM 활성층을 갖는 유기 박막태양전지의 후속 열처리 효과)

  • Jang, Seong-Kyu;Gong, Su-Cheol;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.2
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    • pp.63-67
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    • 2010
  • The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

Absorption Spectroscopy of Biological Specimens Near X-ray Absorption Edges of Constituent Elements

  • Ito, Atsushi;Shinohara, Kunio
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.460-462
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    • 2002
  • Absorption spectra of biological specimens in the soft X-ray region have been presented with special reference to the XANES (X-ray absorption Near Edge Structure) of constituent elements. Absorption spectrum in this wavelength region is characterized by the absorption edges from which elemental content could be derived. In addition, XANES has a characteristic profile for chemical environment around the element such as chemical bond. Using the specific absorption peak we can assign not only the chemical bond but also molecules having such a chemical bond. In the present paper, absorption spectrum of DNA was measured in the wavelength range from 1.5nm to 5nm. Spectrum of Chinese Hamster Ovary (CHO) cells was compared with the DNA spectrum. XANES were distinct at the K absorption edges of major elements, C, N and O. In the spectrum of the cells prominent peaks at the L absorption edge of minor element Ca were also detectable. XANES profiles in small local areas in a cell could also be measured in combination with X-ray microscopy. These give information about local chemical environment in a cell. XANES at the phosphorus K absorption edge in a human HeLa cell was successfully obtained corresponding to a sharp and intensive XANES peak of DNA.

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Fabrication of large area OPV cells (대면적 유기 태양 전지의 제작)

  • Byun, Won-Bae;Shin, Won Suk;Ryu, Ka Yeon;Park, Hye Sung;Moon, Sang-Jin
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.69.2-69.2
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    • 2010
  • Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.

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Size-dependent Optical and Electrical Properties of PbS Quantum Dots

  • Choi, Hye-Kyoung;Kim, Jun-Kwan;Song, Jung-Hoon;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.186-186
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    • 2012
  • This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (<0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

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