• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.121-128
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• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.520-524
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• 1999

The Impact ionization rate is highly anisotropic at low electron energy, while it becomes isotropic at higher energy range in which impact ionization events frequently accur. In this study, full energy band structure obtained by pseudopotential method and Fermi's golden rule is used to calculate impact ionization rate. The calculated impact ionization rate is well fitted to a modified Keldysh formular at 300K and 77K. Full band Monte Carlo simulator is made to investigate the validity of the GaAs impact ionization coefficients at 300K and 77K. Impart ionization process is isotropic under the condition of steady state since anisotrophy appears during very short time at look. Impart ionization coefficients is nearly constant and is anisotropic in electric field applied along the <110> direction at 77K.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.77-81
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• 2009

An Area Radiation Monitoring System (ARMS) ionization chamber, which had an 11.8 L active volume, was fabricated and performance-tested at KAERI. Low leakage currents, linearities at low and high dose rates were achieved from performance tests. The correlation coefficients between the ionization currents and the dose rates are 1 at high dose rate and 0.99 at low dose rate. In this study, an integration-type ARMS ionization chamber was tested over a year for an evaluation of its long-term stability at a radioisotope (RI) repository of the Young-gwang nuclear power plant. The standard deviation of dose rate of 1 day data and over a 100-days mean value were 6.2 $\mu$R/h and 2.9 $\mu$R/h, respectively. The fabricated ARMS ionization chamber showed stable performance from the results of the long-term tests. Design and performance characteristics of the fabricated ionization chamber for the ARMS from performance-tests are also addressed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.129-135
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• 1996

In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.389-393
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• 1999

The exact model of impact ionization events in which has influence on device efficiency, is to be necessary element for device simulation. Recently, a modified Keldysh formula with two set of power exponent of 7.8 and 5.6 is used to simulate carrier transport. This model is, however, not suitable as impact ionization model in low energy range since this ignore direction dependent properties of impact ionization. The impact ionization rate is highly anisotropic at low energy, while it becomes isotropic at higher energy range. Note that impact ionization events frequently occur in high energy range. For calculating impart ionization rate, we use full energy band structure derived from Fermi's golden rule and empirical pseudopotential method. We compare with calculated and experimental value, and investigate direction dependent conduction energy band structure along the direction of <100>, <110> and <111>. We know that the threshold energy of impact ionization is anisotropic and impact ionization rate is very deviated from modified Keldish formula, in relatively low energy range.

• Journal of Food Hygiene and Safety
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• v.17 no.4
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• pp.183-187
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• 2002

This study was performed to investigate the utility of egg-shell calcium with calcium soak egg-shell in the vinegar. We compared examination eluted quantity with ionization rate in each condition. The results were as follows. 1 The degree of elution and ionization of calcium was proportional to the amount of vinegar and added acetic acid in the vinegar for elution. And ionization rate was the most high in case of 200 ml vinegar volume. 2. fluted quantity were increased in the rank order to 4$0^{\circ}C$ > 3$0^{\circ}C$ > 2$0^{\circ}C$ by temperature but the rank order of ionization of calcium was 3$0^{\circ}C$ > 2$0^{\circ}C$ > 4$0^{\circ}C$ by temperature. The occurrence of unacceptable flavor resulting from the immersion at 4$0^{\circ}C$ was another obstacle to adopt. 3. Eluted quantity and ionization rate of the egg-shell calcium were appeared excellent in case of the brewage vinegar at ventilation condition. The case of brown rice vinegar did not show a considerable difference, but eluted quantity and ionization rate were appeared the most excellent to the other sample. 4. The optimum condition for elution and ionization of the egg-shell calcium was appeared Immersing egg-shells in the brewed rice-bran vinegar at 3$0^{\circ}C$ for three days.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.552-554
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• 1999

Phonon scattering and impact ionization models have been presented to analyze hot carrier transport in high energy region, using full band model and Fermi's golden rule. We have investigated temperature dependent properties for impact ionization process of Si using realistic energy band structures at 77K and look. The realistic full band model, obtained from the empirical pseudopotential method with local from factors, is used to calculate scattering rate. The accurate calculation of impact ionization rate requires the use of a wavevector- and frequency-dependent dielectric function ξ ( q,$\omega$). The empirical phonon scattering rate P$\sub$ph/, is given by deriving from linear function for P$\sub$ph/ versus D(E) since the phonon scattering rate is linearly depended on density of states D(E). Impact ionization rate p,, is calculated from the first principle's theory. and fitted by modified Keldysh formula having power of above 2.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.112-119
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• 1996

Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.4
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• pp.915-922
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• 1999

The field dependent characteristics of electron transport with GaAs impact ionization have been analyzed, using GaAa full band E-k relationship. The E-k relationship is derived from empirical pseudopotential method, using Fermi's golden rule and local form factor, and Brillouin zone is divided into tetrahedrons for calculating impact ionization rate, and tetrahedron method, in which integrates each tetrahedrons, is used. Monte Carlo simulation is used for analyzing anisotropy of impact ionization. A result of transient analysis for impact ionization has presented that anisotropy of impact ionization only arises during transient state and impact ionization is isotropic under steady state. Anisotropic characteristics of impact ionization for GaAs, which is presented in this paper, can be used in carrying out a transient analysis for GaAs devices.