• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.460-464
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature-and field-dependent characteristics of impact ionization for GaAs. Resultly impact ionization coefficients are In good agreement with experimental values at 300k. We know energy is increasing along increasing the field. while energy is decreasing along increasing the temperature since the phonon scattering rates for omission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function for temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We know, therefore, logarithm of impact ionization coefficients has quadratic dependence on temperature and field, and we can save time of calculating the temperature- and field-dependent impact ionization coefficients.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.753-755
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• 1988

In this paper, the effective ionization coefficients (${\alpha}-{\eta}$/Po) are measured by the steady state Townsend method in Townsend discharge domain. The effective ionization coefficients are measured in the range 75${\leqq}$E/Po${\leqq}$150(V/Torr. cm) in $SF_{6}$. The values of the effective ionization coefficients are easily and precisely determined by means of the linearization of current growth equation. The effective ionization coefficients of $SF_{6}$ were agreement with that of Bhalla and Craggs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.697-703
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature dependent characteristics of impact ionization for GaAs as a function of field. Resultly impact ionization coefficients are in good agreement with experimental values at look. We how energy is increasing along increasing the field, while energy is decreasing along increasing the temperature since the phonon scattering rates for emission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function of temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We Dow, therefore, the logarithm of impact ionization coefficients has quadratic dependence on temperature, and we can save time of calculating the temperature dependent impact ionization coefncients as a function of field.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.451-454
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• 2000

The impact ionization(I.I.) is necessary to analyze carrier transport properties under the influence of high electric field. The full band I-k relation and Fermi's golden rule are used for the calculation of impact ionization rate. We have investigated the temperature- and field-dependent impact ionization coefficient for silicon using full band Monte Carlo simulation. The impact ionization coefficients calculated by our impact ionization model are agreed with experimental data at look. We know that impact ionization coefficients and electron energies are decreasing along increasing temperature due to increase of phonon scattering, especially by emission. The logarithm of impact ionization coefficients are fitted to linear function for temperature and field. The residuals of linear function are within the error bound of 5%. We know logarithmic impact ionization coefficients are linearly dependent on temperature and field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.520-524
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• 1999

The Impact ionization rate is highly anisotropic at low electron energy, while it becomes isotropic at higher energy range in which impact ionization events frequently accur. In this study, full energy band structure obtained by pseudopotential method and Fermi's golden rule is used to calculate impact ionization rate. The calculated impact ionization rate is well fitted to a modified Keldysh formular at 300K and 77K. Full band Monte Carlo simulator is made to investigate the validity of the GaAs impact ionization coefficients at 300K and 77K. Impart ionization process is isotropic under the condition of steady state since anisotrophy appears during very short time at look. Impart ionization coefficients is nearly constant and is anisotropic in electric field applied along the <110> direction at 77K.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.1
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• pp.27-31
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• 2011

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1431-1433
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• 1996

Effective ionization coefficients for (100), (110) and (111) oriented gallium arsenide are extracted from the ionization coefficients far electrons and holes. Analytical formulas for the breakdown voltage of the GaAs Schottky rectifiers are derived by employing the ionization coefficients. The breakdown voltages obtained from our analytical model agree fairly well with the numerical results as well as the experimental ones reported in the range of $10^{14}\;cm^{-3}$ - $5{\times}10^{17}\;cm^{-3}$ doping concentrations.