• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• 전자공학회논문지 IE
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• 제44권1호
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• pp.10-14
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• 2007

InP의 전자와 정공의 이온화계수로부터 추출한 유효이온화계수를 이용하여 InP 다이오드의 항복전압을 위한 해석적 표현식을 유도하였다. 해석적 항복전압 결과를 $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$의 도핑 농도에서 수치적 결과 및 실험 결과와 비교하였다. 각 농도에 따른 해석적 항복전압은 수치 해석적 결과와 매우 잘 일치하였고, 실험 결과와는 10% 이내의 오차로 잘 일치하였다.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.773-778
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• 2001

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in SF$_{6}$ and SF$_{6}$-Ar mixtures have described. The ionization and attachment coefficients in pure SF$_{6}$ and SF$_{6}$-Ar mixtures have been calculated over the range of 10$_{6}$ molecule and for Ar atom proposed by other authors. The transport coefficients for electrons in (0.2%)SF$_{6}$-Ar and (0.5%)SF$_{6}$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy. The results obtained in this work will provide valuable information on the fundamental haviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. gas mixtures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.613-616
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• 2001

This SF6 gas is widely used in industrial of insulation field. In this paper, N2 is mixed to improve pure SF6 gas characteristics. Electron transport coefficients in SF6-N2 mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical EIN, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of SF6-N2 mixture gases.?⨀␍?܀㘱〮㜳㬓M敤楣楮攠慮搠桥污瑨

• 전기의세계
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• 제27권2호
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• pp.69-74
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• 1978

There have been a number of experimental or theorethical investigations of transport coefficient for electrons in the field of gas. In this paper the authors present the method by which Townsend first ionization doefficient (.alpha.) or attachment coefficient (.eta.) can be deduced easily and precisely by means of analyzing Townsend equation based on linealized least squares method. The apparent ionization coefficient (.alpha.-.eta.)/p have been analyzed from the experimental data by applying the new method above mentioned. And the values of (.alpha.-.eta.)/p in SF$_{6}$ as a function of E/p were agreement with the values measured by Bhalla et al. who analyzed th experimental pre-breakdown currents. In the same way (.alpha.-.eta.)/p in N$_{2}$O had a same tendency to that of Folkard et al.l.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.102-105
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• 2002

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1${\sim}$300 [Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.613-616
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• 2001

This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.468-469
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• 2007

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-tenn approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• 대한전자공학회논문지SD
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• 제40권5호
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• pp.290-297
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• 2003

전자와 정공의 온도 관련 이온화 계수로부터 추출한 온도 함수의 유효 이온화 계수 및 전자 이동도를 이용하여 실리콘 전력 MOSFET의 항복 전압과 on 저항을 위한 온도 함수의 해석적 표현식을 유도하였다. 온도 함수의 해석적 항복 전압 결과를 4x10/sup 14/ cm/sup -3/, 1x10/sup 15/ cm/sup -3/, 6x10/sup 16/ cm/sup -3/의 도핑 농도에 대해 각각 실험 결과와 비교하였고, 온도 및 항복 전압 함수의 on 저항 변화도 각각 실험 결과와 비교하였다. 각농도에 따른 온도 함수의 해석적 항복 전압은 77∼300k의 온도 범위에서 실험 결과와 10% 이내의 오차로 잘 일치하였다.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.1-5
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• 2009

6H-SiC 전자 및 정공의 이온화계수로부터 유효이온화계수를 추출하여 6H-SiC PN 다이오드의 항복전압과 온-저항을 위한 해석적 표현식을 유도하였다. 해석적 모형으로부터 구한 항복전압을 $10^{15}{\sim}10^{18}\;cm^{-3}$의 도핑 농도 범위에서 실험 결과와 비교하여 10% 이내의 오차로 일치하였고, 농도 함수의 온-저항의 해석적 결과도 $5{\times}10^{15}{\sim}10^{16}\;cm^{-3}$의 범위에서 이미 발표된 수치적 결과와 매우 잘 일치하였다.