• Title/Summary/Keyword: Ion-beam sputtering

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Fabrication and Characteristics of a Highly Sensitive GMR-SV Biosensor for Detecting of Micron Magnetic Beads (미크론 자성비드 검출용 바이오센서에 대한 고감도 GMR-SV 소자의 제작과 특성 연구)

  • Choi, Jong-Gu;Lee, Sang-Suk;Park, Young-Seok
    • Journal of the Korean Magnetics Society
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    • v.22 no.5
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    • pp.173-177
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    • 2012
  • The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

Analysis of the Staking Fault in Crystalline Phase of Thin Films Fabricated by $Bi_2Sr_2Ca_1Cu_2O_x$ Composition ($Bi_2Sr_2Ca_1Cu_2O_x$ 조성으로 제작된 박막의 결정상에 대한 고용비 해석)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.524-527
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    • 2007
  • [ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.

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Influence of the Solid Solution for Crystalline Phase on the Characterization of $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) Thin Films (결정상에 대한 고용체가 $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) 박막의 특성에 미치는 영향)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.6
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    • pp.1115-1121
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    • 2007
  • [ $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$ ](n=0,1,2) thin fans have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

Physical Properties of AuGe Liquid Metal Ion Implanted n-GaAs (AuGe 액체금속 이온이 주입된 n-GaAs의 물성연구)

  • Kang, Tae-Won;Lee, Jeung-Ju;Kim, Song-Gang;Hong, Chi-Yhou;Leem, Jae-Young;Chung, Kwan-Soo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.63-70
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    • 1989
  • The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

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Study of the characteristics of Secondary Electron Emission from MgO Layer for Low-Energy Noble Ions (저에너지 불활성 기체이온에 의한 AC 플라즈마 디스플레이 패널용 MgO막의 이차전자 방출특성에 관한 연구)

  • 이상국;김재홍;이지화;황기웅
    • Journal of the Korean Vacuum Society
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    • v.11 no.2
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    • pp.108-112
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    • 2002
  • We investigated the secondary electron emission characteristics of MgO layer used as the protecting material in a.c. plasma display panel(a.c.-PDPs) using a pulsed ion beam technique, where the surface charging can be effectively suppressed during the measurement. The measurement of the secondary electron emission coefficients ($\gamma$) on the surface of $SiO_2$ was carried out and then, it was found that the yields were dependent on incident ion energies. In addition, it was clearly demonstrated that the sputtering on MgO surface leads to lower yields, which suggests that the surface plays a key role on the operating conditions, such as life time, fast response, and etc.

THIN FILM TECHNOLOGIES RELATED TO THE HIGH T$_{c}$ SUPERCONDUCTORS

  • Ri, Eui-Jae
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.415-423
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    • 1996
  • Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

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The Effect of Slider Surface Texture on Flyability and Lubricant Migration under Near Contact Conditions

  • Zhou, L.;Kato, K.;Vurens, G.;Talke, F.E.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.277-278
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    • 2002
  • Magnetron and Ion beam sputtering were used to texture the air-bearing surface of magnetic recording sliders. Flying height measurements and Laser-Doppler interferometry were used to compare the 'flyability' of textured and untextured sliders. Lubricant redistribution on the disk surface caused by slider/disk interactions was investigated using scanning ellipsometry (Surface Reflectance Analyzer (SRA)). The results show that slider surface texture causes only small changes in the flying height of sliders but reduces slider in-plane and out-of-plane vibrations. Textured sliders were found to cause less lubricant depletion on the disk surface than untextured sliders.

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Flexible Plastic ITO Substrates for OLED using Vapor-Polymerized Parylene C

  • Lee, Kyu-Chul;Choi, Soo-Hyun;Cho, Sung-M;Choi, Kang-Yong;Lee, Jung-Kyu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.973-974
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    • 2004
  • We report the fabrication of flexible plastic ITO substrates and the measurement of oxidant permeation through the substrates. The plastic ITO substrates are composed of multiple organic and inorganic thin films. The organic thin films are deposited by vapor polymerization and the inorganic films are deposited by ion beam sputtering. In order to estimate the oxidant permeation rate, the pure Ca film is formed on the substrates and the amount of CaO produced by the oxidation of Ca is measured.

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Development of a multi-functional nano-fabrication system for fabrication and measurement (가공 및 측정이 가능한 복합나노가공시스템의 개발)

  • 장동영;박만진;김진현;한동철
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.04a
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    • pp.466-471
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    • 2004
  • In focused-ion-beam (FIB) application of micromachining and device transplantation, four kinds of FIB processes, namely FIB sputtering, FIB-induced etching, redeposition, and FIB-induced deposition, are well utilized. As with FIB systems, scanning electron microscopes(SEMs) were extensively used in the semiconductor industry. They are the tools of choice for defect review and providing the image resolution needed for process monitoring. The enhanced capabilities of a dual-column on one chamber system are quickly becoming realized by the nano industry for performing a wide range of application.

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The Influence of Bi-Sticking Coefficient in Bi-2212 Thin Film

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.152-156
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    • 2000
  • Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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