• Title/Summary/Keyword: Ion-beam sputtering

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Measurement of Sputtering Yield of $RF-O_2$ Plasma treated MgO Thin Films ($RF-O_2$ Plasma 처리한 MgO 박막의 스퍼터링 수율 측정)

  • Jeong, W.H.;Jeong, K.W.;Lim, Y.C.;Oh, H.J.;Park, C.W.;Choi, E.H.;Seo, Y.H.;Kim, Y.K.;Kang, S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.259-265
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    • 2006

  • We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

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Hydrogen concentration and critical epitaxial thicknesses in low-temperature Si(001) layers grown by UHV ion-beam sputter deposition.

  • Lee, Nae-Eung
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.139-144
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    • 1999

  • Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

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Fabrication of Micro/nanoscale Cutting Tool Geometry of Single Crystal Diamond Tool by Focused Ion Beam (집속이온빔(Focused Ion Beam)에 의한 단결정 다이아몬드 공구의 마이크로/나노스케일 절삭공구 형상 제작)

  • Baek, Seung Yub;Jang, Sung Min
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.3
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    • pp.207-213
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    • 2014

  • A study was carried out to fabricate the cutting tool geometry with micro/nanoscale on the single crystal diamond tool by using the FIB. The FIB technique is an ideal tool for TEM sample preparation that allows for the fabrication of electron-transparent foils. The FIB is appropriate techniques to sample and subsequently define the chemical composition and the structural state of mineral inclusion on the micro/nanoscale. The combination of FIB with a SEM allows for 3D information to be obtained from samples including 3D imaging. Cutting strategies were demonstrated to improve the performance of cutting tool geometry and to generate high aspect ratio micro cutting tool. A finely focused beam of 30keV Ga+ ions was used to mill cutting tool shapes for various micro patterns. Therefore FIB sputtering is used to shape a variety of cutting tools with dimensions in the $1-5{\mu}m$ range and cutting edge radii of curvature of under 50nm.

  • https://doi.org/10.7736/KSPE.2014.31.3.207 인용 PDF KSCI