• Electrical & Electronic Materials
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• v.9 no.7
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• pp.719-726
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• 1996

DLTS measurements were performed to study the annealing induced changes of the trap centers in MOV and to shed more light on the stability mechanism of the MOV. Two electron traps, Ec-0.26[eV] and Ec-(O.2-0.3)[eV], were observed in the unannealed samples in large quantities(7-9 X 1014[CM 3]), whereas the three electron traps Ec-0.17 [eV], Ec-0.26[eV] and Ec-(O.2-0.3)[eV] were observed far less in the annealed samples. The minima in the Ec-0.26[eV] trap density, coupled with the presented results that unannealed devices are unstable whereas 600.deg. C annealed devices are most stable, suggests that the instability of the MOV under long term electrical stressing is related to the Ec-0.26[eV] trap. This results support that the ion migration model for the device instability where the Ec-0.26[eV] defects may be the interstitial zinc or the migrating ions. The interstitial zinc originated as a result of the nonstoichiometric nature of ZnO might cause the degradation of the I-V characteristics of the MOV with long term electrical stressing.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• The Korean Journal of Physiology and Pharmacology
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• v.27 no.4
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• pp.311-323
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• 2023

Ion homeostasis, which is regulated by ion channels, is crucial for intracellular signaling. These channels are involved in diverse signaling pathways, including cell proliferation, migration, and intracellular calcium dynamics. Consequently, ion channel dysfunction can lead to various diseases. In addition, these channels are present in the plasma membrane and intracellular organelles. However, our understanding of the function of intracellular organellar ion channels is limited. Recent advancements in electrophysiological techniques have enabled us to record ion channels within intracellular organelles and thus learn more about their functions. Autophagy is a vital process of intracellular protein degradation that facilitates the breakdown of aged, unnecessary, and harmful proteins into their amino acid residues. Lysosomes, which were previously considered protein-degrading garbage boxes, are now recognized as crucial intracellular sensors that play significant roles in normal signaling and disease pathogenesis. Lysosomes participate in various processes, including digestion, recycling, exocytosis, calcium signaling, nutrient sensing, and wound repair, highlighting the importance of ion channels in these signaling pathways. This review focuses on different lysosomal ion channels, including those associated with diseases, and provides insights into their cellular functions. By summarizing the existing knowledge and literature, this review emphasizes the need for further research in this field. Ultimately, this study aims to provide novel perspectives on the regulation of lysosomal ion channels and the significance of ion-associated signaling in intracellular functions to develop innovative therapeutic targets for rare and lysosomal storage diseases.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.335-338
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed environment-dependent interatomic ptential (EDIP) was suitable for ultra low ion implantation simulation, and found that point defects formation energies were in good agrrement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. The number of isolated defects that are produced by collision cascades are onlya few of the total number of defects, and fmost of the damages are concentrated into amorphous-like pockets.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.445-445
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• 2008

The behavior of ion trapping and migration in the yittria-stabilized zirconia pellets following high dose ion beam irradiation have been studied using SEM, EDX, and TGA. The ion beam was irradiated at room and higher temperatures and the differences in their results were interpreted in terms of dynamic annealing effects. The SRIM calculation was also performed to explain the cross sectional SEM image of the electrolytes.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.137-143
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• 1991

The relation between the ion irradiation induced grain growth and the basic parameters sinvolved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with nuclear energy deposition and thermodynamic properties such as cohesive energy ( Hc) and heat of mixing ( Hm). A model for the grain growth based on the thermal spike induced atomic migration was developed and applied to interpret experimental results.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.30-40
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed Environment-Dependent Interatomic Potential(EDIP) was suitable for ultra low energy ion implantation simulation, and found that point defects formation energies were in good agreement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. Most of the damages that are produced by collision cascades are concentrated into amorphous-like pockets. Also, We upgraded MDRANGE code for silicon ion implantation process simulation. We simulated ultra-low energy boron ion implantation, 200eV, 500eV, and 1000eV respectively, and calculated boron profiles with silicon substrate temperature and tilt angle. We investigated that below 1000eV, channeling effect must be considered.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.213-221
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• 2021

In order to improve the energy density and safety of Li-ion batteries, the development of a separator with high thermal stability and electrolyte wettability is an important desire. Thus, the ceramic separator to replace the polymer type is one of the most promising materials that can prevent short-circuit caused by the formation of dendrite and thermal deformation. In this study, we introduce the fabrication of various anodic aluminum oxide membranes for the application of Li-ion battery separators with the advantages of improved mechanical/thermal stability, wettability, and a high rate of Li⁺ migration through the membrane. Two different types of through-holes and branched anodic aluminum oxide membranes are well used in lithium-ion battery separators, however, branched anodic aluminum oxide membranes exhibit the most improved performance with capacity (126.0 mAh g^-1 @ 0.3C), capacity drop at the high C-rate (30.6 %), and low internal resistance (8.2 Ω).

• Applied Chemistry for Engineering
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• v.35 no.1
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• pp.48-53
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• 2024

We predicted the calendar aging and long-term lifetime of lithium-ion batteries using an electrochemical-based SEI growth model. Numerical simulation was carried out employing the four different long-term SEI growth models (i.e., solvent diffusion limited model, electron migration limited model, Li-interstitial diffusion limited model, reaction limited model), and we calculated the capacity fade and loss of lithium inventory during calendar aging. The result showed that the electron migration limited model and Li-interstitial diffusion limited model showed lower capacity fade, while the solvent diffusion limited model and reaction limited model reached 80% of capacity fade within 10 years. During calendar aging, the lower storage temperature showed less capacity fade due to the hindrance of SEI growth rate. During cycling, the higher C-rate showed a shorter life cycle; however, the differences were not significant.

• Corrosion Science and Technology
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• v.6 no.2
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.