• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 한국분말재료학회지
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• 제25권1호
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• pp.7-11
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• 2018

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

• 공업화학
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• 제31권1호
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• pp.97-102
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• 2020

최근 리튬이차전지 양극 소재의 다양한 열화 메커니즘들이 밝혀지면서 이것을 제어하여 새로운 전기화학적 특성을 구현하고 기존 소재의 한계점을 극복하고자 하는 연구결과들이 많이 보고되고 있다. 특히, 리튬과잉산화물은 250 mA h g^-1 이상의 고 용량 차세대 리튬이차전지 양극 물질로 주목받고 있으나, 충방전 과정 중에 소재 특유의 원자 구조 열화로 인해 활용이 제한되고 있다. 본 연구는 0.4Li₂MnO₃_0.6LiNi_1/3Co_1/3Mn_1/3O₂ 리튬과잉소재의 충방전 과정 중에서 겪는 원자 구조 변화 과정을 분석하여 소재의 열화 과정을 밝히고 이를 개선하기 위한 연구 방향을 제시하고자 한다. 이를 위해, 원자 단위의 분해능을 갖는 전자투과현미경을 활용하여 충방전 중 원자 구조의 변화 과정을 분석하고 이러한 구조 변화가 소재의 전기화학적 특성에 어떠한 영향을 미치는지 밝히고자 하였다. 충전 과정 중에 발생한 다량의 리튬 빈자리로 인해 구조 불안정성이 일어났고, 이로 인해 전이 금속이 리튬 빈 자리로 이동하면서 구조 열화가 확인되었다. 결과적으로 이러한 구조 변이는 리튬과잉소재의 가장 큰 문제점인 방전 전압 강하 특성을 야기한다는 것을 알아내었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.74-77
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• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• 한국응용과학기술학회지
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• 제32권2호
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• pp.312-319
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• 2015

In this study, n-butanol and ethyl acetate extracts were prepared from raw yam (Dioscorea batatas DECNE.). Their antioxidative potencies were investigated employing various in vitro methods, such as ferrous ion chelating, ${\beta}$-carotene bleaching assay, lipid peroxidation inhibition and nitric oxide (NO) radical scavenging and nitrite scavenging activity. The n-butanol fraction was assayed to possess stronger antioxidant activity by ${\beta}$-carotene bleaching assay, lipid peroxidation inhibition and NO radical scavenging activity. However, ethyl acetate extract was more effective in chelating ferrous ion and scavenging nitrite. Based on the results obtained, yam is a potential active ingredient that could be applied in antioxidation as well as bio-health functional food to take a good part in prevention of human diseases and aging.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.698-703
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• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• 한국세라믹학회지
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• 제26권5호
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• pp.601-608
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• 1989

Electrical properties of ZrF4-based heavy metla fluoride glasses were measured by the ac complex impedance method. The effects of alkali and chloride ions addition into fluoro zirconate glasses on the electrical conductivity were examined. The electrical conductivities of fluoride glasses show Arrhenian behavior in the temperature range of the experiment and were decreased by the addition of sodium fluoride up to 15mol%. Mixed alkali substitution resulted in conductivity minimum at intermediate composition which is commonly observed as mixed alkali effect' in alkali oxide glasses. Chloride ion substituted for fluoride ion was found to lower the conductivity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.18-20
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• 2006

The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a life time test. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).

• 대한전자공학회논문지
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• 제18권5호
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• pp.22-29
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• 1981

게이트절연층을 위한 HCI 열처리법 텅그스텐 metallization 및 fumed silica epoxy를 쓴 다중층 encapsulation 기술을 감이온 전장효과 트랜지스터(ISFET) 제조에 활용하고 이의 동작특성을 조사하였다. 또 ISFET를 위한 이론적 모형을 제시하고 이 것이 실험사실과 잘 일치함을 보였다. 제조된 ISFET는 빠른 반응, 긴 수명 및 작은 이압특성을 나타내었는데, 특히 안정부는 크게 개선되었다.