• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.9
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• pp.1037-1041
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• 2014

Slurry used for polishing semiconductors processed by exchange, pressurization, and multi-step feeding has been studied to investigate the effect of the size and shape of slurry particles on the oxide CMP removal rate. First, spherical silica sol was prepared by the ion exchange method. The spherical silica particle was used as a seed to grow non-spherical silica sol in accordance with the multi-step feeding of silicic acid by the ion exchange and pressurization methods. The oxide removal rate of both non-spherical silica sol and commercially available slurry were compared with increasing average particle size in the oxide CMP. The more alkaline the pH level of the non-spherical silica sol, the higher was the removal rate and non-uniformity.

• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.1-5
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• 2000

The selective catalytic reduction(SCR) of nitric oxide by ethane in the presence of oxygen was investigated on Cu-ZSM-5, Co-ZSM-5 and Ga-ZSM-5 catalysts over a range of 400, 450 and $500^{\circ}C$. The catalysts were prepared by ion-exchange method. The composition of the reactant gases were 1000 ppm of NO, 1000 ppm of $C_{2}H_{6}$ and 2.5% of $O_{2}$, and the reaction was conducted in a fixed-bed reactor at 1 atm. For the 20wt% Co-ZSM-5(50) catalyst, the NO conversion reached up to 100%, while the $C_2H_6$ conversion and the CO selectivity were about 50% and 25%, respectively, at $450^{\circ}C$. For the 20wt% Cu-ZSM-5(50) catalyst, the NO conversion and the C2H6 conversion were about 80% and 100%, respectively, but there was no CO produced. The metal ion-exchanged ZSM-5 catalysts exhibited a tendency to increase the NO conversion with the Si/Al ratio of the ZSM-5, that is, NO conversion was inversely proportional to the acidity of the catalysts. But, the effect of the acidity on NO conversion was not so large. From the XRD results of the catalysts before and after SCR reaction it was found that there was no structural change.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.541-546
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• 2006

In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1358-1366
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Bulletin of the Korean Chemical Society
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• v.35 no.12
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• pp.3553-3558
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• 2014

The reduced graphene oxide(rGO)/aluminum phosphate($AlPO_4$)-coated $LiMn_{1.5}Ni_{0.5}O_4$ (LMNO) cathode material has been developed by hydroxide precursor method for LMNO and by a facile solution based process for the coating with GO/$AlPO_4$ on the surface of LMNO, followed by annealing process. The amount of $AlPO_4$ has been varied from 0.5 wt % to 1.0 wt %, while the amount of rGO is maintained at 1.0 wt %. The samples have been characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The rGO/$AlPO_4$-coated LMNO electrodes exhibit better cyclic performance compared to that of pristine LMNO electrode. Specifically, rGO(1%)/$AlPO_4$(0.5%)- and rGO(1%)/$AlPO_4$(1%)-coated electrodes deliver a discharge capacity of, respectively, $123mAhg^{-1}$ and $122mAhg^{-1}$ at C/6 rate, with a capacity retention of, respectively, 96% and 98% at 100 cycles. Furthermore, the surface-modified LMNO electrodes demonstrate higher-rate capability. The rGO(1%)/$AlPO_4$(0.5%)-coated LMNO electrode shows the highest rate performance demonstrating a capacity retention of 91% at 10 C rate. The enhanced electrochemical performance can be attributed to (1) the suppression of the direct contact of electrode surface with the electrolyte, resulting in side reactions with the electrolyte due to the high cut-off voltage, and (2) smaller surface resistance and charge transfer resistance, which is confirmed by total polarization resistance and electrochemical impedance spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.111-116
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• 2000

700nm red emission(3F3longrightarrow3H6) in Tm3+ ion with 800 nm(3H6longrightarrow3H4) excitation via upconversion process has been reported only in host materials which have low phonon energies such as halide crystals. However, we observed 700nm and 480nm(1G4longrightarrow3H6) upconverted emission with 800nm excitation in several oxide glasses which has never reported. With spectroscopic analyses and lifetime measurements of each nergy level of Tm3+ ion doped in various oxide glasses, following mechanisms are suggested. For red upconversion, upconversion mechanism changed with Tm3+ concentration. While direct excitation up to 3F3 level via anti-Stokes excitation was dominated at low concentration, two-step excitation via 3H6longrightarrow3H4 and 3F4longrightarrow3F3 transitions was dominated at high concentration. For blue upconversion, two step excitation mechanism up to 1G4 level was suggested as follows : electrons are exciated up to 3H5 with direct excitation with pumping light up to 3H4 followed by multiphonon relaxation, and then additional reabsorption of pumping light excites electrons up to 1G4.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• Membrane Journal
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• v.28 no.3
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• pp.205-213
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• 2018

In this study, cross-linked membrane were successfully prepared by using brominated PPO (Br-PPO) as the main polymer chain. Chitosan and quaternary ammonium modified chitosan (QA-chitosan) was used as the cross linking agents. The cross linked membranes were post-functionalized by using trimethylamine solution. The degree of cross linking was also controlled by varying the ratio of cross linking agent. The applicability of the cross-linked membrane (A-PPO + chitosan, A-PPO + QA-chitosan) as ion exchange membranes was verified through various characterization techniques. The cross-linked membrane using QA-chitosan as cross linking agent was found to be better in performance than the membrane using pristine chitosan cross linking agent. As the percentage of QA-chitosan increased, the ion exchange capacity from 1.18 meq/g to 1.53 meq/g and water uptake from 21.6% to 42.2% was improved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.203-209
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• 2023

Cobalt sulfide nanocomposites were synthesized through a simple hydrothermal method as anode materials for sodium ion batteries (SIBs). In this work, a cobalt sulfide nanoparticle (CoS-NF) and a cobalt sulfide nanocomposite integrated with reduced graphene oxide (CoS@G-NC) were fabricated for electrochemical energy storage performance of battery. The as-prepared CoS@G-NC electrode exhibited reversible and stable cycle performance (62 % after 30 cycles at current density of 200 mA g^-1). The improved electrochemical property was attributed to the small grain growth and uniform distribution of cobalt sulfide during synthesis, which maximized the diffusion pathway for sodium ions and effectively suppressed the delamination and volume expansion of cobalt sulfide during the conversion reaction. The results provide promising anode materials for next-generation SIBs.