• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.455-464
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• 2001

Effect of bombardment of the growing film by energetic particles on its properties is know over many years and is widely used for modification of the film properties. Despite of this there are no final answers on such questions as: what is the mechanism of compositional changes that take place for some compound films deposited under the ion bombardment, how the ion bombardment influences the epitaxial growth, what mechanisms govern the growth of the film on its early stages during deposition under the ion bombardment. The role of composition of film-forming species in formation of film structure is barely investigated or even not investigated at all. Experimental evidence and discussion of the influence of ion bombardment and composition of film-forming species on structure and composition of compound films are briefly considered in the review.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.92-94
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• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.115-125
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• 2000

TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.410-415
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• 1999

The adhesion strength of sputtered copper films to Inconel substrates has been studied using the scratch test. The effects of substrate treatments before deposition such as chemical or ion bombardment etching were investigated by means of a mean critical load derived from a Weibull-like statistical analysis. It was found that the mean critical load was very weak unless the amorphous layer produced by mechanical polishing on the substrate surface was eliminated. Chemical etching in a nitric-hydrochloric acid bath was shown to have practically no effect on the enhancement of the adhesion. In contrast, the addition in this bath of nickel and copper sulphates allowed removal of the amorphous layer and an increase in the values of the mean critical load. However, it was observed that excessive chemical etching could cancel out the mean critical load enhancement. The results obtained in the case of ion bombardment etching pretreatments could be far higher than those obtained with chemical etching. Moreover, for a sufficiently long period of ion bombardment etching, the adhesion strength was so high that it was impossible to observe evidence of an adhesion failure.