• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.205-209
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• 2001

Uniformly-doped silicon thin films were fabricated by ion beam sputter deposition. The thin films had four levels of copper dopant concentration ranging between 1 ${\times}$1019 and 1 ${\times}$ 1021 atoms/cm3 . Concentrations of Copper dopants were determined by the isotope dilution inductively coupled plasma mass spectrometry (ICP-MS) to provide certified reference data for the quantitative surface analysis by secondary ion mass spectrometry (SIMS). The copper-doped thin films were dissolved in a mixture of 1 M HF and 3 M HNO3 spiked with appropriate amounts of 65 Cu. For an accurate isotope ratio determination, both the detector dead time and the mass discrimination were appropriately corrected and isobaric interference from SiAr molecular ions was avoided by a careful sample pretreatment. An analyte recovery efficiency was obtained for the Cu spiked samples to evaluate accuracy of the method. Uncertainty of the determined copper concentrations, estimated following the EURACHEM Guide, was less than 4%, and detection limit of this method was 5.58 ${\times}$ 1016 atoms/cm3.

• Journal of ILASS-Korea
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• v.4 no.1
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• pp.13-18
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• 1999

It has been known that spray characteristics have an important effect on the mixture formation and directly influence the engine performances and the emissions. Up to now, the measurement of droplet size is well developed such as PDPA and PMAS though the behavior of small droplets during secondary atomization is not clear. Particle image velocimetry(PIV), a planar measuring technique, is a very efficient tool for studying complicated behavior and a fast and reliable method to track numerous droplets during injection. In this study, two-color scanning PIV is designed to obtain quasi-instantaneous two dimensional velocity data by using he-ion laser, rotating mirror and beam splitter. This PIV method which has high temporal and spatial resolution provides the information about the small complex droplet behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.355-358
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• 2008

We report a method for improving characteristics of AC PDP in this study. This improvement is obtained by spreading MgO nanoparticles on transparent dielectric layer. These nanoparticles are covered with MgO protective layer by electron beam evaporation. MgO nanoparticle has difference in cathodoluminescence stronger than MgO layer by electron beam evaporation. This method worked for reducing statistical delay especially. Efficacy, discharge voltage and luminance were also improved But these improvements has limited lifetime because continuous ion bombardments changed characteristic of MgO surface.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.305-312
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• 2012

We numerically demonstrate the performance of a plasmonic lens composed of an array of nanoslits perforated on thin metallic film with slanted cuts on the output surface. Embedding Kerr nonlinear material in nanoslits is employed to modulate the output beam. A two dimensional nonlinear-dispersive finite-difference time-domain (2D N-D-FDTD) method is utilized. The performance parameters of the proposed lens such as focal length, full-width half-maximum, depth of focus and the efficiency of focusing are investigated. The structure is illuminated by a TM-polarized plane wave and a Gaussian beam. The effect of the beam waist of the Gaussian beam and the incident light intensity on the focusing effect is explored. An exact formula is proposed to derive electric field E from electric flux density D in a Kerr-Dispersive medium. Surface plasmon (SPs) modes and Fabry-Perot (F-P) resonances are used to explain the physical origin of the light focusing phenomenon. Focused ion beam milling can be implemented to fabricate the proposed lens. It can find valuable potential applications in integrated optics and for tuning purposes.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2854-2863
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• 2023

Objective: To present a hybrid approach that incorporates a constrained beam-hardening estimator (CBHE) and deep learning (DL)-based post-refinement for metal artifact reduction in dental cone-beam computed tomography (CBCT). Methods: Constrained beam-hardening estimator (CBHE) is derived from a polychromatic X-ray attenuation model with respect to X-ray transmission length, which calculates associated parameters numerically. Deep-learning-based post-refinement with an artifact disentanglement network (ADN) is performed to mitigate the remaining dark shading regions around a metal. Artifact disentanglement network (ADN) supports an unsupervised learning approach, in which no paired CBCT images are required. The network consists of an encoder that separates artifacts and content and a decoder for the content. Additionally, ADN with data normalization replaces metal regions with values from bone or soft tissue regions. Finally, the metal regions obtained from the CBHE are blended into reconstructed images. The proposed approach is systematically assessed using a dental phantom with two types of metal objects for qualitative and quantitative comparisons. Results: The proposed hybrid scheme provides improved image quality in areas surrounding the metal while preserving native structures. Conclusion: This study may significantly improve the detection of areas of interest in many dentomaxillofacial applications.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.242-248
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• 1997

Porous silicons were prepared by dry etching as well as by chemical etching. The latter is a conventional method used by many researchers. Meanwhile, the former is a new method we developed. Also the porous silicon structure was made by E-beam lithography technique. However, due to the limit of this technique, minimum size we could produce was about 0.3 $\mu\textrm{m}$ in diameter on silicon wafer. In a new method, the porous silicon microstructure was fabricated by using Reactive Ion Etching method after covering with diamond powder on 4 inch wafer by using spin coater. In this method, diamond powder acted as a mask. The morphology of samples prepared under many different conditions were analysed be SEM and AFM. And we measured PL spectra for the samples. Based on these results, we observed the structure of a few hundreds $\AA$ in size from porous silicon which was made by dry etching with diamond powder. Also the PL peak for these samples lied around 590 nm compared to 760 nm for chemically etched porous silicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.11
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• pp.2771-2776
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• 2000

In this work, the effect of surface treatment of prepreg on the mode I fracture behavior was studied. Unidirectional (0-deg) double cantilever beam (DCB) specimens were used for fracture tests. Two groups of DCB specimens were made: the first group was made of prepregs surface-treated by Ar(sup)+ ion beam under oxygen environment and the second group was made of regular prepregs. For both groups, fracture resistance curve (R-curve) was determined and compared to each other, Results showed that resistance behavior of the first group is better than that of the second group. That is, mode I fracture toughness, G(sub)Ic of the first group is 24% larger than that of the second group. SEM examination shows that the improvement of G(sub)Ic is due to the increase of interfacial strength between plies.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.7-9
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• 2003

Solid-state reactions in Ni/Si multilayered films (MLF) with an overall stoichiometry of $Ni_2Si$, NiSi and $NiSi_2$, induced by ion-beam mixing (IBM) and thermal annealing, were studied by using spectroscopic ellipsometry and magneto-optical spectroscopy as well as x-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of $1.5 x\times10^{16}$ $Ar^+$/$\textrm{cm}^2$. It was shown that the IBM induces structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by the optical method. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and $NiSi_2$ causes formation of the first η -NiSi phase. The first trace for $NiSi_2$ phase on the background of NiSi one was detected by XRD after an annealing at 1073 K while, according to the optical results, $NiSi_2$ turns out be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of $NiSi_2$.