• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• Journal of Magnetics
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• v.12 no.1
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.143-144
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• 2015

Here we report the Ar-ion milling rates of ultrathin Si and GaAs single crystals. The thickness change is measured using convergent beam electron diffraction (CBED) technique with the help of Bloch wave simulation method. This study suggests the experimental procedures to determine the references for an etching rate to reduce a sample thickness or to remove the damaged sample surface using Ar-ion source.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2184-2186
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• 2005

Neutron production is very important to apply fusion energy through SCBF(Spherically Convergent Beam Fusion) device and its rate is Proportional to the square of the ion current$({\propto}I^2)$. Also the ion current has a close relation with the potential well structure in grid cathode. In this paper, the ion current is calculated for the increasement of neutron production rate in a variety of grid cathode geometry. The atomic and molecular collision are taken into account by Monte Carlo Method and Potential is calculated by Finite Element Method. Main processes of the discharge is the ionization of $D_2$ by fast $D_2^+$ ion. As the number of a cathode ring is small and gap distance decreases, the ion current increases and neutron production rate will increase.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.79-85
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• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.480-485
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• 2017

Soft mold imprinting method that uses nanostructured polymer mold was investigated for anti-reflection film fabrication. The nanostructured soft mold was polyethylene terephthalate(PET) irradiated by oxygen ion beams. The collisional energy transfer between oxygen ion and the polymer surface induced cross-linking and scission reactions, resulting in self-organized nanostructures with regular patterns of the wavenumber of $5{\mu}m^{-1}$. Post processes including ultra-violet curable resin coating and delamination fabricated anti-reflection films. The imprinted resin surface also showed the consistent wavenumber, $5{\mu}m^{-1}$. Pristine PET, oxygen ion beam treated PET, and imprinted replica sample showed total transmittance of 91.04, 93.25, and 93.57-93.88%, respectively.

• Nuclear Engineering and Technology
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• v.51 no.7
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• pp.1860-1865
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• 2019

The confinement degradation of the energetic particles during RMP would be a key issue in success of realizing the successful energy production using fusion plasma, because a 3.5 MeV energetic alpha particle should be able to sustain the burning plasma after the ignition. As KSTAR recent results indicate the generation of high-performance plasma(${\beta}_p{\sim}3$), the confinement of the energetic particles is also an important key aspect in neutral beam driven plasma. In general, the measured absolute value of the neutron intensity is generally used for to estimating the confinement time of energetic particles by comparing it with the theoretical value based on transport calculations. However, the availability of, but for its calculation process, many accurate diagnostic data of plasma parameters such as thermal and incident fast ion density, are essential to the calculation process. In this paper, the time evolution of the neutron signal from an He3 counter during the beam blank has permitted to facilitate the estimation of the slowing down time of energetic particles and the method is applied to investigate the fast ion effect on ELM suppressed KSTAR plasma which is heated by high energy deuterium neutral beams.

• Journal of Radiation Industry
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• v.8 no.1
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• pp.59-63
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• 2014

Proton Induced X-ray Emission (PIXE) is a MeV ion beam analysis method for use with particle accelerators. PIXE uses low-energy charged particles as an excitation mechanism to generate characteristic x-ray emission from each element in a target. In PIXE analysis, the beam current used is from a few nA to several tens of nA. Chosun University (Cyclotron Research Center) designed a $50{\mu}A$ beam line from the 13 MeV cyclotron for use with a PIXE analysis system, as well as performing beam transport line optimization research. In this study, the beam line operation conditions for the optimization process of beam transport and beam characteristics are shown.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.243-246
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• 2008

We have studied the liquid crystal (LC) alignment, the pretilt angle generation, and the annealing behavior for a nematic liquid crystal (NLC) on the homogeneous polyimide (PI) surfaces by using the rubbing method and the ion beam (IB) method. An excellent LC alignment of the NLC on the PI surface with rubbing and IB irradiation were observed. The pretilt angle of NLC on the homogeneous PI surface for the rubbing method is decreased from $4.5^{\circ}$ to $3.5^{\circ}$ as rubbing time is increased, that of the for the IB irradiation method is decreased from $0.5^{\circ}$ to $0.1^{\circ}$ as the time of IB irradiation is increased. After the annealing, the pretilt angles of the rubbed PI surfaces increased up to $4^{\circ}$, these of the IB irradiated PI surfaces little increased. It is considered the side chain of the rubbed PI show the its abilities of the original capacities, while the side chain of the IB irradiated PI cannot show the its abilities of the original capacities due to the IB has already destroyed the side chain of the PI.

• Applied Microscopy
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• v.45 no.4
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.