• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.945-946
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• 2008

• Design & Manufacturing
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• v.14 no.2
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• pp.56-61
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• 2020

Recently, research for machining next-generation micro semiconductor processes and micro patterns has been actively conducted. In particular, it is applied to various industrial fields depending on the machining method in the case of FIB (Focused ion beam) milling. In this study, intends to deal with FIB milling machining technology for ultra-precision diamond tool fabrication technology. Ultra-precision diamond tools require nano-scale precision, and FIB milling is a useful method for nano-scale precision machining. However, FIB milling has a problem of Gaussian characteristics that are differently formed according to the beam current due to the input of an ion beam source, and there are process conditions to be considered, such as a side clearance angle problem of a diamond tool that is differently formed according to the tilting angle. A series of process steps for fabrication a ultra-precision diamond tool were studied and analyzed for each process. It was confirmed that the effect on the fabrication process was large depending on the spot size of the beam and the current of the beam as a result of the experimental analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.109-110
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• 2008

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.229-233
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments of the micro plasma electrode fabrications using FIB. The sputtering of FIB has one major problem that is redeposited by sputtered material including $Ga^+$ ion source. Therefore we have verified the effect of the reposition by EDX. And the optimal condition is suggested to machine the micro plasma electrode.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.1
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• pp.86-95
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• 2011

Ultra-precision machining technology is the essential core technology in today's micro-electronics and electro-optical industries. The needs for processing systems to manufacture products to nanometer(nm) accuracy and sub-nanometer resolutions are increased recently. By using ion beam, it is possible to fabricate ultra-precision and ultra-fine products with nm accuracy and sub-nm resolution. In this paper, the basic research trends of ultra precision machining technology in domestic are surveyed, and the ways to reach to the world-leading level of basic research capabilities in the field of ultra-precision machining technology in domestic is suggested.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.58-63
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• 2006

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.171-172
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• 2012

• Applied Microscopy
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• v.42 no.4
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• pp.223-227
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• 2012

Focused Ion Beam (FIB) systems have incorporated versatile nanomanipulators with inherent sophisticated machining capability to characterize the electrical properties of highly miniature components of electronic devices. Carbon fibers were chosen as a model system to test the applicability of nanomanipulators to microscale electronic materials, with special emphasis on the direct current current-voltage characterizations in terms of electrode configuration. The presence of contact resistance affects the electrical characterization. This resistance originates from either i) the so-called "spreading resistance" due to the geometrical constriction near the electrode - material interface or ii) resistive surface layers. An appropriate electrode strategy is proposed herein for the use of FIB-based manipulators.