• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.266-270
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• 2010

The effect of an Ar plasma treatment on polycarbonate substrates was investigated using $TiO_2$ coatings produced by reactive ion-beam assisted sputtering. The typical pressure used during sputtering was about $10^{-4}$ Torr. After the Ar plasma treatment, the contact angle of a water droplet was reduced from $88^{\circ}$ to $52^{\circ}$ and then further decreased to $12^{\circ}$ with the addition of oxygen into the chamber. The surface of the polycarbonate substrate hanged from hydrophobic to hydrophilic with these treatments and revealed its changing nano-scale roughness. The $TiO_2$ films on the treated surface showed various colors and periodic ordering dependant on the film thickness due to optical interference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.

• Journal of Astronomy and Space Sciences
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• 제11권2호
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• pp.250-272
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• 1994

Various plasma instabilities driven by the ion beams have been proposed in order to explain the broadband electrostatic noise (BEN) in the earth's geomagnetic tail. Ion acoustic, ion-ion two stream, and electron acoustic instabilities have been proposed. Here we consider a theoretical investigation of the generation of BEN by cold streaming ion beams in the earth's magnetotail. Linear theory analysis and particle simulation studies for the plasma sheet, which consists of warm electrons and ions as well as cold streaming ion beams, have been done. Both beam-ion acoustic and ion-ion two stream instabilities easily occur when the beam and warm electron temperature ratio, $T_b/T_e$ is small enough. The numerical simulation results confirm the existence of broadband electrostatic noise whose frequency is ranged from $\omega$=0 to $\omega$$\omega_{pe}$.

• Applied Science and Convergence Technology
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• 제27권4호
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• pp.70-74
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• 2018

We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

• 한국재료학회지
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• 제13권9호
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• pp.587-592
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• 2003

The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.161-166
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• 2005

The plasma ion density in AC-PDP has shown to be increased from $5.6{\times}10^{11}cm^{-3}$ to $9.0{\times}10^{11)cm^{-3}$ as the Xe mixture ratio to neon increase from 1 % to 10 %, respectively, at fixed pressure of 400 Torr, by using the micro-Langmuir probe. It is noted that the plasma ion density is density increases as the gas pressure increases in this experiment. The electron temperature decreases from 2.3 to 1.2 eV as the Xe mole fraction increases from 1 % to 10 % at fixed pressure of 400 Torr, which is measured by the micro Langmuir probe and high-speed ICCD camera in this experiment. It is noted that the electron temperature decreases as the gas pressure increases from 150 to 400 Torr in this experiment. It is also observed that the exited Xe atom density and the plasma ion density are in strong correlation sharp between each other in this experiment. It is noted that $5.2{\times}10^{12}cm^{-3}$ in the $1s_5$ metastable state and $1.2{\times}10^{12}cm^{-3}$ in the $1s_4$ resonance state for the PDP cell with gap of 50 um distances under the fixed gas pressure of 400 Torr and Xe content ratio of 10 %.

• 전기학회논문지
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• 제57권1호
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• pp.78-81
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• 2008

A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride(LaB6) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the LaB6, which is also useful for optimal fixing of the LaB6. The hollow cathode is capable of producing 30 kW(100 V, 300 A) of power continuously. Because the generated plasma beam with the high temperature(above $3000^{\circ}C$) from the hollow cathode passes through the center hole of the two intermediate electrodes, it is designed with the high temperature material of the tungsten and the suitable structure of the water cooling. The combinations of the hollow cathode and the two intermediate electrodes are practically useful for the ion plating plasma beam source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.839-844
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• 2002

This letter focuses on the liquid crystal alignment characteristics according to the properties of hydrogenated amorphous carbon(a-C:H) thin film deposited by RPECVD(Remote Plasma Enhanced Chemical Vapor Deposition) method using $C_2H_2$ and He gases. The properties of the deposited thin films were controlled by the ion beam irradiation time and ion beam energy. The results show that not ion beam energy but ion beam irradiation time plays an important role in the properties of a-G:H thin films. As the ion beam irradiation time increases, not only the sp2 concentration in a-G:H thin films but also liquid crystal pretilt angle was varied.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.135-135
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• 2004